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    IN26A Search Results

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    IN26A Price and Stock

    Vishay Semiconductors VLIN26A1-03GHE3-18

    TVS DIODE 26.5VWM 50VC SOT323
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    DigiKey VLIN26A1-03GHE3-18 Reel 10,000
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    Vishay Semiconductors VLIN26A1-03GHE3-08

    TVS DIODE 26.5VWM 50VC SOT323
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    DigiKey VLIN26A1-03GHE3-08 Reel 15,000
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    Vishay Semiconductors VLIN26A1-03G-E3-18

    TVS DIODE 26.5VWM 50VC SOT323
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    DigiKey VLIN26A1-03G-E3-18 Reel 10,000
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    Vishay Semiconductors VLIN26A1-03G-E3-08

    TVS DIODE 26.5VWM 50VC SOT323
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    DigiKey VLIN26A1-03G-E3-08 Reel 15,000
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    VLIN26A1-03G-E3-08 Digi-Reel 1
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    VLIN26A1-03G-E3-08 Cut Tape 1
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    Vishay Intertechnologies VLIN26A1-03GHE3-18

    ESD PROTECTION DIODE SOT323 (Alt: VLIN26A1-03GHE3-18)
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    Avnet Americas VLIN26A1-03GHE3-18 12 Weeks 10,000
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    Mouser Electronics VLIN26A1-03GHE3-18
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    Newark VLIN26A1-03GHE3-18 Reel 10,000
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    TTI VLIN26A1-03GHE3-18 Reel 10,000
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    EBV Elektronik VLIN26A1-03GHE3-18 13 Weeks 10,000
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    Find more IN26A price and stock on Findchips.com

    IN26A Datasheets Context Search

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    IN17A

    Abstract: No abstract text available
    Text: <<Contents>> <<Index>> General Specifications ARM15A, ARM55, ARS15B, ARS15M, ARS55M Relay Boards for FIO GS 33K50H60-50E [Release 5]  GENERAL This document describes the specifications of relay board used in FIO subsystem of CENTUM VP. Relay input/


    Original     		PDF ARM15A, ARM55ï ARS15B, ARS15M, ARS55M 33K50H60-50E 32-point IN17A

    ADV151

    Abstract: ADV561 fcn-100 yokogawa
    Text: <<Contents>> <<Index>> General Specifications ARM15A, ARM55, ARS15B, ARS15M, ARS55M Relay Boards for FIO GS 33K50H60-50E [Release 5] n GENERAL This document describes the specifications of relay board used in FIO subsystem of CENTUM VP. Relay input/ output boards are connected in between digital input/output modules (for FIO) and field devices. Relay input boards


    Original     		PDF ARM15A, ARM55ï ARS15B, ARS15M, ARS55M 33K50H60-50E 32-point ADV151 ADV561 fcn-100 yokogawa

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


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    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


    OCR Scan     		PDF