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    Military Specifications IN2988B

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    IN298 Datasheets Context Search

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    10 watt zener diode

    Abstract: in2970 IN2989 IN2970B IN2976B in2974b 1N300SB 1N2981B 1N2970 10 watts zener diode
    Text: NEW ENGLAND SEMICONDUCTOR 1N2970B thru 1N3015B 10 WATT SILICON ZENER DIODES Available in Voltages from 6.8 thru 200 V FEATURES: POLARITY: 1N2970 -1N3015: Std. Polarity is anode to stud. Reverse polarity indicated by suffix "R". • • • • • ZENER VOLTAGE 6.8 TO 200 V


    OCR Scan     		1N2970 -1N3015: 1N2970B 1N3015B 1N3003B 1N3004B 1N300SB 1N3006B 1N3007B 1N3008B 10 watt zener diode in2970 IN2989 IN2970B IN2976B in2974b 1N2981B 10 watts zener diode PDF

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


    Original     		PDF

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N PDF

    IN2989B

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR 1N2970B thru 1N3015B 10 WATT SILICON ZENER DIODES Available in Voltages from 6.8 thru 200 V FEATURES: POLARITY: • ZENER VOLTAGE 6.8 TO 200 V • VOLTAGE TOLERANCES; ± 5% , ± 10%, ± 20% • HIGHLY RELIABLE AND RUGGED • HERMETICALLY SEALED


    OCR Scan     		1N2970B 1N3015B 1N2970 -1N3015: IN2989B PDF