IN5712
Abstract: 0265006
Text: BL GALAXY ELECTRICAL IN5712 VOLTAGE RANGE: 20 V Ptot: 430 mW SMALL SIGNAL SCHOTTKY DIODES FEATURES Metal-to-silicon junction DO - 35 GLASS High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended for high level UHF/VHF detection
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IN5712
DO--35
IN5712
0265006
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IN5711
Abstract: in5711 equivalent
Text: BL GALAXY ELECTRICAL IN5711 VOLTAGE RANGE: 60 CURRENT: 400 mW SMALL SIGNAL SCHOTTKY DIODES FEATURES DO - 35 GLASS For general purpos e applications Metal s ilicon s chottky barrier device which is protected by a PN junction guard ring. The low forward voltage
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IN5711
DO--35
IN5711
in5711 equivalent
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diode 5082-3080
Abstract: 5082-2804 5082-2835 diode 5082-2800 datasheet in5712 1N5712 spice IR 10e 5082-2810 F 5082 1N5711
Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications
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1N5711,
1N5712,
1N5711
1N5712
5082-xxxx
5082-xxxx
5968-4304E
diode 5082-3080
5082-2804
5082-2835
diode 5082-2800 datasheet
in5712
1N5712 spice
IR 10e
5082-2810
F 5082
1N5711
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IN5711
Abstract: AD8641 AD8642 AD8643 AD8663 AD8667 AD8669 AD8682 ADA4062 ADA4062-2
Text: Low Power JFET-Input Op Amps ADA4062-2/ADA4062-4 PIN CONFIGURATIONS Low input bias current: 50 pA maximum Offset voltage 1.5 mV maximum for B grade ADA4062-2 SOIC package 2.5 mV maximum for A grade Offset voltage drift: 5 V/°C typical Slew rate: 3.3 V/μs typical
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ADA4062-2/ADA4062-4
ADA4062-2
10-lead
14-lead
16-lead
ADA4062-2
IN5711
AD8641
AD8642
AD8643
AD8663
AD8667
AD8669
AD8682
ADA4062
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DAC10
Abstract: DAC10FX DAC10BX
Text: a 10-Bit High Speed Multiplying D/A Converter Universal Digital Logic Interface DAC10* All DAC10 series models guarantee full 10-bit monotonicity, and nonlinearities as tight as +0.05% over the entire operating temperature range are available. Device performance is essentially unchanged over the ± 18 V power supply range, with
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10-Bit
DAC10*
DAC10
e10-Bit
DAC10BX
DAC10BX/883C
DAC10FX
DAC10GP
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DAC10FX
Abstract: C3134 in5711 equivalent DAC10
Text: DAC10–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol @ VS = ؎15 V; IREF = 2 mA; 0؇C ≤ TA ≤ +70؇C for DAC10F and G, unless otherwise noted. Output characteristics apply to both IOUT and IOUT. Conditions Min MONOTONICITY DAC10F Typ Max
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DAC10
18-Lead
C3134
DAC10FX
in5711 equivalent
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IR 10e
Abstract: HP2.811 IN5712 diode 10e 1N5712 1N5712 spice 1N5711 RS-296-D 5082-2811 diode 5082-2800
Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications
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1N5711,
1N5712,
1N5711
1N5712
5082-XXXX
IR 10e
HP2.811
IN5712
diode 10e
1N5712
1N5712 spice
1N5711
RS-296-D
5082-2811
diode 5082-2800
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MMD0840
Abstract: fs r6a CIRCUIT DIAGRAM IN5711 vishay LIMITING INRUSH CURRENT mosfet LTC6910-1 coiltronics ctx02-13664 MMD-0840 CTX02-13664 LTC3439 mmd series mosfets
Text: LINEAR TECHNOLOGY VOLUME XII NUMBER 4 DECEMBER 2002 COVER ARTICLE Ideal Diode Controller Eliminates Energy Wasting Diodes in Power OR-ing Applications . 1 David Laude Issue Highlights . 2 LTC in the News . 2
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400MHz
OT-23
S-191
MMD0840
fs r6a CIRCUIT DIAGRAM
IN5711 vishay
LIMITING INRUSH CURRENT mosfet
LTC6910-1
coiltronics ctx02-13664
MMD-0840
CTX02-13664
LTC3439
mmd series mosfets
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cb142
Abstract: No abstract text available
Text: Dual/Quad, Low Power, High Speed JFET Operational Amplifiers OP282/OP482 Active filters Fast amplifiers Integrators Supply current monitoring GENERAL DESCRIPTION The OP282/OP482 dual and quad operational amplifiers feature excellent speed at exceptionally low supply currents. The slew
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OP282/OP482
OP282/OP482
14-Ball
14-Lead
cb142
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IN5711
Abstract: OP282G OP282 OP482 OP-482 OP282GS
Text: Dual/Quad Low Power, High Speed JFET Operational Amplifiers OP282/OP482 PIN CONNECTIONS 1 8 V+ –IN A 2 7 OUT B +IN A 3 6 –IN B V– 4 5 +IN B GENERAL DESCRIPTION The OP282/OP482 dual and quad operational amplifiers feature excellent speed at exceptionally low supply currents. The slew
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OP282/OP482
OP282/OP482
14-Lead
IN5711
OP282G
OP282
OP482
OP-482
OP282GS
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IN5712
Abstract: 1N5711 1N5712 N5712 1N5712 spice 5082-xxxx 5082282
Text: Sc ho t t k y Ba r r ier Dio d es fo r Gener a l Pu r p o se Ap p lic a t io ns Tec hnic a l Da t a Fea t u r es ¥ Lo w Tu r n-On Vo lt a g e As Lo w a s 0.34 Va t 1 m A ¥ Pic o Sec o nd Sw it c hing Sp eed ¥ H ig h Br ea k d o w n Vo lt a g e U pt o 70 V
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1N5711,
1N5712,
1N5711
1N5712
5082-xxxx
5082-xxxx
IN5712
1N5711
1N5712
N5712
1N5712 spice
5082282
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BD10
Abstract: BD12 BD13 PB10 PB12
Text: SECTION 10 PORT B Port B is a dual-purpose I/O port that can be used as 1 15 general-purpose pins individually configurable as either inputs or outputs or as 2) an 8-bit bidirectional host interface HI) (see Figure 10-1). When configured as general-purpose I/O, port B can be used for
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DSP56000/DSP56001
BD10
BD12
BD13
PB10
PB12
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IN5711
Abstract: in5711 equivalent JESD51-9 OP282 OP482 OP-482 OP482A OP282GSZ-REEL7
Text: Dual/Quad, Low Power, High Speed JFET Operational Amplifiers OP282/OP482 Active filters Fast amplifiers Integrators Supply current monitoring GENERAL DESCRIPTION The OP282/OP482 dual and quad operational amplifiers feature excellent speed at exceptionally low supply currents. The slew
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OP282/OP482
OP282/OP482
14-Ball
14-Lead
IN5711
in5711 equivalent
JESD51-9
OP282
OP482
OP-482
OP482A
OP282GSZ-REEL7
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gold metal detectors
Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
Text: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes. The
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AN988,
26/IB
gold metal detectors
IN5711
in5711 equivalent
diode ring mixer
PN Junction Diode oscillator
Metal Detector
doppler radar
p-n junction diode
digital metal detector
Silicon Point Contact Mixer Diodes
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1N5767
Abstract: IN5719 1nxxxx diode 5082-XXXX
Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications Features These general purpose switching diodes are intended for low power switching applications such as RF
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1N5719,
1N5767,
1N5712
5082-3xxx
T25/1N57xx
1N57xx
5082-3xxx/
1N57xx
5968-7182EN
1N5767
IN5719
1nxxxx diode
5082-XXXX
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IN5711
Abstract: AD8682 AD8684 DAC8408 RU-14
Text: Dual/Quad Low Power, High Speed JFET Operational Amplifiers AD8682/AD8684 APPLICATIONS Portable telecommunications Low power industrial and instrumentation Loop filters Active and precision filters Integrators Strain gauge amplifiers Portable medical instrumentation
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AD8682/AD8684
AD8682
14-Lead
RU-14
IN5711
AD8682
AD8684
DAC8408
RU-14
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hp 3077
Abstract: HP 5082-3188 hp pin diode 5082-3081 hp 3080 diode 1N5767 IN5719 HP 5082-3379 diode hp 3039 1N5719 RS-296-D
Text: PIN Diodes for RF Switching and Attenuating Technical Data Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications
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5966-0941E
5967-5812E
hp 3077
HP 5082-3188
hp pin diode 5082-3081
hp 3080 diode
1N5767
IN5719
HP 5082-3379
diode hp 3039
1N5719
RS-296-D
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IN5717
Abstract: IN5718 IN5714 7C3 diode IN5421
Text: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces M V830-M V840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X
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100pf
CV830-CV840
MV830-MV84G
CV1006-16-CV1106-16
FV1006-16,
FV1106-16
CV1620-CV1650
MV1620-MV1650
CV1652-CV1666
MV1652-MV1666
IN5717
IN5718
IN5714
7C3 diode
IN5421
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diode hp 2835 schottky
Abstract: diode hp 2900 5082-2912 5082-2800 HP2811 UHF schottky diode 5082-2970 diode hp 5082-2080 1N5711
Text: WEM HEW LETT 1 itiM PACKARD Schottky Barrier Diodes fo General Purpose Application Technical Data Features • Low Tum-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available
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1N5711
1N5712
5082-XXXX
5965-8844E
5966-0930E
diode hp 2835 schottky
diode hp 2900
5082-2912
5082-2800
HP2811
UHF schottky diode
5082-2970
diode hp 5082-2080
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I-3080
Abstract: No abstract text available
Text: GLASS PACKAGED PIN DIODES FOR RF SWITCHING AND ATTENUATING metelics CORPORATION 1 FEATURES • Low Series Resistance • Low C apacitance • Fast Switching and Current Controlled Attenuator Types • Controlled Resistance Curves M AXIM UM RATINGS Total Power Dissipation . . . . 2 5 0 m W a t + 2 5 ° C
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MPN-4166
I-3080
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HP 5082-3081
Abstract: diode 5082-3168 HPND-4165 HP 5082-3168 vhf antenna mtbf hp 3042 1N5767 5082-3168 diode 5082-3001 5082-3042
Text: H E W L E T T P A CK A RD COMPONENTS 5082 3001/02 HPND-4165/66 5082-3039 1N5719 5082-3042/43 5082-3077 5082-3080 (1N5767) 5082-3081 5082-3168/88 PIN DIODES FOR RF SWITCHING AND ATTENUATING Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE
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HPND-4165/66Â
1N5719)
1N5767)
curr080,
IN5719
HP 5082-3081
diode 5082-3168
HPND-4165
HP 5082-3168
vhf antenna mtbf
hp 3042
1N5767
5082-3168
diode 5082-3001
5082-3042
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1N5767
Abstract: 5082-XXXX
Text: Thol mLUM PIN Diodes for RF Switching and Attenuating Technical Data Features • • • • Low Harmonic Distortion Large Dynamic Range Low Series Resistance Low Capacitance Description/Applications These general purpose switching diodes are intended for low
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1N5719
1N5767
5965-9144E
5966-0941E
0017S77
5082-XXXX
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IN5711
Abstract: melf Schottky glass jan In5711 SCHOTTKY DIODE SOD-80 JANTX
Text: SCHOTTKY BARRIER DIODES metelics FOR GENERAL PURPOSE APPLICATIONS CORPORATION FEATURES • High Breakdown Voltage to 70 Volts • Available in Chips, Glass Package Or Double Slug Melf Package • 1N5711 Available in JAN, JANTX and JANTXV • Packages Metallurgical^ Bonded
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1N5711
CD5711
CD5712
CD2810
DSB5712
DSB2810
CDLL5711
CDLL5712
CDLL2810
IN5711
melf Schottky glass
jan In5711
SCHOTTKY DIODE SOD-80 JANTX
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IN5708
Abstract: IN5704 IN5689
Text: K n o x S e m ic o n d u c t o r , IN C . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5681 TO 1N5710 TYPE NUMBER CAPACITANCE @ - 4Vdc 1 MHz pF MIN QUALITY FACTOR Q - 4Vdc F = 50 MHz CAPACITANCE RATIO 2V /40V 4V / 60V MW TYP MIN TYP 3.1 3.1 1N5683 1N5684 1N5685
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1N5681
1N5710
1N5682
1N5683
1N5684
1N5685
1N5686
1N5687
1N5688
IN5708
IN5704
IN5689
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