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    IN914 DIODE Search Results

    IN914 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    IN914 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON SWITCHING DIODE IN914, B IN916 250mW DO- 35 Glass Axial Package FEATURES Intended for General Purpose Application. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    IN914, IN916 250mW C-120 Rev031001 PDF

    1N914

    Abstract: IN914 IN916 1N914B
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON SWITCHING DIODE IN914, B IN916 250mW DO- 35 Glass Axial Package FEATURES Intended for General Purpose Application. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    IN914, IN916 250mW C-120 Rev031001 1N914 IN914 IN916 1N914B PDF

    IN914

    Abstract: in916 in914 diode in914b diode in914 1N914B carton box
    Text: Transys Electronics L I M I T E D HIGH SPEED SILICON SWITCHING DIODE IN914, B IN916 250mW DO- 35 Glass Axial Package FEATURES Intended for General Purpose Application. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VR Reverses Voltage ( Continuous)


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    IN914, IN916 250mW IN914/9ecutive DO-35 IN914 in916 in914 diode in914b diode in914 1N914B carton box PDF

    IN914

    Abstract: IN916 in914 diode 1N914 1N914B
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer HIGH SPEED SILICON SWITCHING DIODE IN914, B IN916 250mW DO- 35 Glass Axial Package FEATURES Intended for General Purpose Application. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    IN914, IN916 250mW C-120 Rev031001 IN914 IN916 in914 diode 1N914 1N914B PDF

    Untitled

    Abstract: No abstract text available
    Text: IH5151 S E M I C O N D U C T O R Dual SPDT, CMOS Analog Switch August 1997 Features Description • Low rDS ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25Ω The IH5151 solid state analog switch is designed using an improved, high voltage CMOS technology.


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    IH5151 IH5151 200ns 120ns IN914 IN914 PDF

    IN914

    Abstract: IH5151CJE IH5151 IH5151CPE IH5151MJE
    Text: IH5151 S E M I C O N D U C T O R Dual SPDT CMOS Analog Switch December 1993 Features Description • Low RDS ON of 25Ω The IH5151 solid state analog switch is designed using an improved, high voltage CMOS technology. • Switches Greater than 20VP-P Signals with ±15V Supplies


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    IH5151 IH5151 20VP-P 120ns 200ns IN914 IN914 IH5151CJE IH5151CPE IH5151MJE PDF

    MIL-PRF-19500/116

    Abstract: 1N914 D0-35 IN914
    Text: • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 1N914 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.068/0.076 1.73/1.93 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C


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    1N914 MIL-PRF-19500/116 1N914 IN914 MIL-PRF-19500/116 D0-35 IN914 PDF

    1n914 equivalent

    Abstract: 1N914 JANTX IN914 1N914 D0-35
    Text: • 1N914 AVAILABLE IN JAN, PER MIL-PRF-19500/116 JANTX, AND JANTXV 1N914 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.068/0.076 1.73/1.93 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C


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    1N914 MIL-PRF-19500/116 1N914 IN914 1n914 equivalent 1N914 JANTX IN914 D0-35 PDF

    LT1001

    Abstract: OFM-1A OPTO MOS SWITCH OFM 2N5160 118MF ROSEMOUNT LT301A LM329 2N5160 equivalent 74c906 2N4393
    Text: LT1001 Precision Operational Amplifier DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire


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    LT1001 LT1001C, LT1001AM LT1001C 152mm) 254mm) 1001fb LT1001 OFM-1A OPTO MOS SWITCH OFM 2N5160 118MF ROSEMOUNT LT301A LM329 2N5160 equivalent 74c906 2N4393 PDF

    AP358

    Abstract: No abstract text available
    Text: This Anachip version datasheet is replaced with Diodes Inc. datasheet AP358 AP358 Low Power Dual Operational Amplifiers Features General Description - Internally frequency compensated for unity gain - Large dc voltage gain: 100 dB - Very low supply current drain 500µA -essentially


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    AP358 AP358 015x45 PDF

    LT1001

    Abstract: No abstract text available
    Text: LT1001 Precision Operational Amplifier DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ U ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire


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    LT1001 LT1001C, LT1001AM LT1001C LT10098 152mm) 254mm) 1001fb LT1001 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated AZV331 SINGLE GENERAL PURPOSE LOW VOLTAGE COMPARATOR Description Pin Assignments KS/K Package SC-70-5/SOT-23-5 The AZV331 is a low voltage 2.5V to 5.5V, single comparator, which has a very low supply current of 60µA, making the part an excellent


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    AZV331 SC-70-5/SOT-23-5) AZV331 LMV331. DS36529 PDF

    ultronix 105A

    Abstract: LT1001 118MF LM129 LT1001AM LT1001C LT1002 74C9 Transistor 2N3866 2N3866 equivalent
    Text: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire


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    LT1001 LT1001C, LT1001AM LT1001C 152mm) 254mm) ultronix 105A LT1001 118MF LM129 LT1001AM LT1001C LT1002 74C9 Transistor 2N3866 2N3866 equivalent PDF

    IC CA3140

    Abstract: PIN DIAGRAM OF IC CA3140 ca3140 CA3140 voltage comparator ca3140 equivalent ca3140 meter CA3140 operational amplifier analog IC CA3140 CA3140 current comparator ca3140 equivalents
    Text: CA3140 S E M I C O N D U C T O R BiMOS Operational Amplifier with MOSFET Input/Bipolar Output April 1994 Features Description • MOSFET Input Stage - Very High Input Impedance ZIN -1.5TΩ (Typ.) - Very Low Input Current (Il) -10pA (Typ.) at ±15V - Wide Common Mode Input Voltage Range


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    CA3140 -10pA CA3140A CA3140 140kHz IC CA3140 PIN DIAGRAM OF IC CA3140 CA3140 voltage comparator ca3140 equivalent ca3140 meter CA3140 operational amplifier analog IC CA3140 CA3140 current comparator ca3140 equivalents PDF

    Untitled

    Abstract: No abstract text available
    Text: LT1002 Dual, Matched Precision Operational Amplifier U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1002 dual, matched precision operational amplifiers combine excellent individual amplifier performance with tight matching and temperature tracking between


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    LT1002 LT1002A 110dB PDF

    strain gauge amplifier

    Abstract: strain gage amplifier VN46 LT301A transistor D 1002 TY-90 KELVIN-VARLEY DIVIDER dp311 LT1002CN 2N2907
    Text: LT1002 Dual, Matched Precision Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ The LT 1002 dual, matched precision operational amplifiers combine excellent individual amplifier performance with tight matching and temperature tracking between amplifiers.


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    LT1002 LT1002A 110dB strain gauge amplifier strain gage amplifier VN46 LT301A transistor D 1002 TY-90 KELVIN-VARLEY DIVIDER dp311 LT1002CN 2N2907 PDF

    tn 0740

    Abstract: No abstract text available
    Text: CD4148 CD914 CD3600 CD4150 IN4148 AVAILABLE IN JANHC AND JANKC • IN914 AVAILABLE IN JANHC AND JANKC • SWITCHING DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES WITH


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    IN4148 IN914 CD4148 CD914 CD3600 CD4150 CD914 D4149 100mA tn 0740 PDF

    CD4146

    Abstract: CD4148
    Text: CD4148 CD914 CD3600 CD4150 IN4148 AVAILABLE IN JANHC AND JANKC • IN914 AVAILABLE IN JANHC AND JANKC • SWITCHING DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES WITH


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    IN4148 IN914 CD4148 CD914 CD3600 CD4150 CD614 CD4146 CD4148, CD914, PDF

    IN914

    Abstract: No abstract text available
    Text: • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV 1N914 PER MIL-PRF-19500/116 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C


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    1N914 MIL-PRF-19500/116 1N914 20Vdc IN914 IN914 PDF

    IN4149

    Abstract: cv8790 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 IN4448
    Text: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JGDEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed "1 S " are Texas Instruments in-house numbers.


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    CV8790 IS922 DO-35 CV9637 IN4448 DS59-61/03/302 BAY71 DS59-61/03/303 IN4149 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N914 AVAILABLE IN JAN, JAN TX, AND JA N T X V 1N914 PER M1L-PRF-195D0/11G SWITCHING DIODE HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C Operating Current: 75 mA @ T ^ = + 25°C


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    1N914 M1L-PRF-195D0/11G 1N914 IN914 PDF

    IN914

    Abstract: IH5149MFD 30v analog switch mosfet analog switch circuit Mosfet analog switch low voltage low resistance SPDT ANALOG SWITCH ups aros HI-5048 HI-5049 IH5148MFD
    Text: Intersil High-Rellabllity Products IH5148 - IH5151 High Reliability High-Level CMOS Analog Switches GENERAL DESCRIPTION FEATURES The IH5148 family of solid state analog switches are de­ signed using an improved, high voltage CMOS technology. Destructive latchup has been eliminated. Early CMOS


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    IH5148 IH5151 10jxA. 200nsec IN914 in914 IH5149MFD 30v analog switch mosfet analog switch circuit Mosfet analog switch low voltage low resistance SPDT ANALOG SWITCH ups aros HI-5048 HI-5049 IH5148MFD PDF

    CV9637

    Abstract: cv8617 is920 equivalent IS920 cv7332 DO35 DIODE Is44 cv8790 CV7040 CV7875 IN4149
    Text: Approved Products Small Signal Diodes Case Outlines Dimensions are in mm Case outline 1-90 - d ia1 65 -25*4 m inCathode end is denoted by broad colour band Commercial Equivalent Outline Rated VR Rated IF mA V F @ IF V mA DO-35 DO-35 DO-35 DO-35 DO-35 DO-35


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    DO-35 BS9300 IN914 DO-35 CV8790 IS922 CV9637 IN4448 cv8617 is920 equivalent IS920 cv7332 DO35 DIODE Is44 CV7040 CV7875 IN4149 PDF

    Untitled

    Abstract: No abstract text available
    Text: P ro du ct specification P hilips Sem iconductors Linear Products Voltage comparator NE527 DESCRIPTION PIN CONFIGURATIONS The NE527 is a high-speed analog voltage comparator which, for the first time, mates state-of-the-art Schottky diode technology with the conventional linear process. This allows simultaneous


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    NE527 NE527 NE529 PDF