Untitled
Abstract: No abstract text available
Text: ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P 3 -J 3 = P 4 -J 4 2 .0 DC RESISTANCE: P 3 - J 3 P 4 -J 4 3 .0 COMMON MODE ATTENUATION: FREQUENCY M H z TYP, (~ d B ) 1 16 10 27 30 30 70 30 200 17 89 uH MIN. 0.0 1V , 0 .5 o h m 0 .5 o h m 10 KHz, MAX MAX InNet
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I-20100
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MT90S
Abstract: No abstract text available
Text: High Power Resistors_ Q tubular type - vitreous enamel coated Key features • 20 watts upto 500 watts • tough vitreous coating • range of terminal styles • attractively priced • 15 times power - short time • operate up to 400°C • custom designs welcomed
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F0476
MT90S
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Untitled
Abstract: No abstract text available
Text: 0603 CHIP INDUCTORS OutgassingCompliantChipInductors AE312RAA Typical L vs Frequency 120 110 100 90 80 70 60 50 40 30 20 400 10 270 nH 350 25°C This robust version of Coilcraft’s standard 0603CS series features high temperature materials that pass NASA low
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AE312RAA
0603CS
6197A
8753ES
CCF1232
CCF1010
AE195-2â
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Untitled
Abstract: No abstract text available
Text: 0603 CHIP INDUCTORS High-Reliability Chip Inductors ML312RAA Typical L vs Frequency 400 270 nH 350 110 100 90 80 70 60 50 40 30 20 10 300 Inductance nH 120 -55 -40 250 -20 20 40 60 80 100 120 140 160 Ambient temperature (°C) 200 B overall 120 nH 150 68 nH
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ML312RAA
0603CS
15orrelation
8753ES
CCF1010
ML195-2
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Untitled
Abstract: No abstract text available
Text: j TYPE A iu lfts J h A iu tt '•z/ •>’ ■FWWO UlUU^ftOTQ amm 91 TYPE 8RHB2 Frequency Range: 1-200kHz Inductance Range: 1.0-1000|iH Temperature Coefficient: 400ppm/°C, max. Features • Ideal as a choke coil for noise filtering and DC/DC convertor applications.
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1-200kHz
400ppm/Â
MS560J
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PDF
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400v 20 amp mosfet
Abstract: OM6230SS 6 AMP 1000V DIODE lead N CHANNEL MOSFET 10A 1000V OM6227SS OM6228SS OM6232SS OM6233SS TN-1500 MOSFET 1000v 10a
Text: OM6227SS QM6230SS OM6232SS OM6228SS OM6231SS OM6233SS DUAL HIGH CURRENT POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 400V, 500V, 1000V, Up To 24 Am p N-Channel, Dual Size 6 High Energy M OSFETs FEATURES • • • • • • • Dual Uncommitted MOSFETs
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OM6227SS
OM6230SS
OM6232SS
OM6228SS
OM6231
OM6233SS
MIL-S-19500,
0M6227SS
534-5776FAX
400v 20 amp mosfet
6 AMP 1000V DIODE lead
N CHANNEL MOSFET 10A 1000V
OM6233SS
TN-1500
MOSFET 1000v 10a
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lqw18as1n8j00
Abstract: No abstract text available
Text: RF Inductors Coils Data Sheet 1 LQW18AS_00 Series 0603/1608 (inch/mm) Wound Thickness General (No Shield) E-12 E-24 1.0 mm Step max. Step Reflow RoHS OK c Packaging 1.6±0.2 0.80±0.15 *1 0.8±0.2 Code Packaging Minimum Quantity D ø180mm Paper Taping 4000
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LQW18AS
330mm
180mm
LQW18AN
LQW18AS1N6J00p
250MHz
700mA
030the
lqw18as1n8j00
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1008CT
Abstract: 1008CT-150E
Text: WIRE-WOUND CHIP INDUCTOR – CERAMIC / Low Profile 1008CT 2520 Series (4.2 ~ 560nH) Part Number Inductance nH 1008CT-4N2E TS 1008CT-6N8E_TS 1008CT-8N2E_TS 1008CT-150E_TS 1008CT-200E_TS 1008CT-270E_TS 1008CT-300E_TS 1008CT-400E_TS 1008CT-500E TS 1008CT-600E_TS
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1008CT
560nH)
1008CT-4N2E
1008CT-6N8E
1008CT-8N2E
1008CT-150E
1008CT-200E
1008CT-270E
1008CT-300E
1008CT-400E
1008CT
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hp 2800
Abstract: diode hp 2800 IND0040-Z IND0041-C epcos 800 045
Text: SMT Inductors, SIMID Series B82499A SIMID 0402-A Size 0402 EIA and/or 1005 (IEC) Rated inductance 1.0 to 100 nH Rated current 90 to 400 mA Construction • Copper-plated ceramic core ■ Laser-cut winding, epoxy-coated Features ■ ■ ■ ■ ■ ■ Extremly close tolerance of dimensions
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B82499A
402-A
hp 2800
diode hp 2800
IND0040-Z
IND0041-C
epcos 800 045
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AH 222M
Abstract: CFI06B 2A100VDC
Text: Classification LCDR 1012 V - 01 400 — ► Inductance . stand for 40.0/iH ► Design no. - ► Type . ( V-vertical type, H-horizontal type) - ► Core size -► Product code
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LCOW1012V
LCOW1415V
LCOW1215V
LCOW1010V-01400
LCOW1010V-02120
LCOW1215V-01080
LCOW1215V-02095
LCOW1215
LCOW1215V-04140
AH 222M
CFI06B
2A100VDC
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Untitled
Abstract: No abstract text available
Text: GA5 GOWANDA -O 37 Standard inductance values, other non-standard values and tolerances also available. MINIATURE HIGH CURRENT CHOKES .400 in 10.16 mm. MAX. SERIES Package - heat-shrinkable, flame retardant tubing with high resistivity Ferrite coil form.
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GA5-104K
GA5-124K
GA5-154K
GA5-184K
GA5-224K
GA5-274K
GA5-334K
GA5-394K
GA5-474K
GA5-564K
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SN10-400J
Abstract: No abstract text available
Text: Normal mode SN Coils Terminal Base Type – J Type Rated current A 3 3 3 5 5 Model SN10-300J SN10-400J SN10-500J SN12-400J SN12-500J DC resistance (⏲) max. 0.041 0.056 0.071 0.037 0.045 Inductance ( H) min. 40 72 110 64 100 Temperature rise(K) max. 23
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SN10-300J
SN10-400J
SN10-500J
SN12-400J
SN12-500J
100KHz,
KC547
SN8S-500JA
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D 400 transistor data
Abstract: AN569 MTP5N40E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TM O S E -FE T ™ High Energy P o w er FET MTP5N40E Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS on = 1-0 OHM This advanced high voltage TMOS E -F E T is designed to
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MTP5N40E
2n3904
2n3904
D 400 transistor data
AN569
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PDF
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Untitled
Abstract: No abstract text available
Text: Normal mode SN Coils Terminal Base Type – J Type [RoHS [RoHS Compliant] Compliant] Rated current A 3 3 3 5 5 Model SN10-300J SN10-400J SN10-500J SN12-400J SN12-500J DC resistance (⏲) max. 0.041 0.056 0.071 0.037 0.045 Inductance ( H) min. 40 72 110
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SN10-300J
SN10-400J
SN10-500J
SN12-400J
SN12-500J
100kHz,
P0915MCAF10VOL08E
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IRFP340
Abstract: No abstract text available
Text: International S Rectifier PD-9.456C IRFP340 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 400V ^DS on = 0.55Q
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IRFP340
0-55O
O-247
O-220
O-218
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PDF
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Untitled
Abstract: No abstract text available
Text: Normal mode SN Coils Terminal Base Type – J Type [RoHS [RoHS Compliant] Compliant] Rated current A 3 3 3 5 5 Model SN10-300J SN10-400J SN10-500J SN12-400J SN12-500J DC resistance (⏲) max. 0.041 0.056 0.071 0.037 0.045 Inductance ( H) min. 40 72 110
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SN10-300J
SN10-400J
SN10-500J
SN12-400J
SN12-500J
100kHz,
P0938MCAF10VOL09E
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PDF
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irf740 spice model
Abstract: IRF740
Text: HE D I 4âSS452 QÛ0ÔS44 0 | Data Sheet No. PD-9.375G INTERNATIONAL RECTIFIER T INTERNATIONAL. RECTIFIER l O R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74Ì IRF742 N-CHANNEL IRF743 Product Summary 400 Volt, 0.55 Ohm HEXFET T0-220AB Plastic Package
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SS452
IRF740
IRF74Ã
IRF742
IRF743
T0-220AB
IRF741
C-299
irf740 spice model
IRF740
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PDF
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EMC Ferrite inductor
Abstract: MFI-322522S-R47 M27100
Text: MFI-S SERIES CUTTING-EDGE TECHNOLOGIES OF EMI/EMC SOLUTIONS Wound Ferrite Chip Inductors Signal Type • FEATURES MFI-S chip inductors are Mag.Layers’ line of high performance wound chip inductors. The MFI-S chip inductors are constructed with a wire wound structure and have a higher
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MFI-322522S-270
MFI-322522S-330
MFI-322522S-390
MFI-322522S-470
MFI-322522S-560
MFI-322522S-680
MFI-322522S-820
MFI-322522S-101
MFI-322522S-121
MFI-322522S-151
EMC Ferrite inductor
MFI-322522S-R47
M27100
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PDF
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1608G
Abstract: 1005GC2T1N5S00 1608GC2T27N 1608GC2T33N 1608GC2T8N2 HP6612C 1005GC2T1N 1608GC2T1N5S00 1608GC2T2N2S00 1608GC2T6N8
Text: MULTILAYER CERAMIC CHIP INDUCTORS 1005 0402 GC / 1608(0603) GC Series Features 1. 2. 3. 4. Designed for high frequency RF application. High self resonant frequency(SRF)and excellent Q. Multilayered ceramic construction provides high reliability. Miniature size : 1005(0402) / 1608(0603)
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rf740
Abstract: HIRF740F HIRF740 mosfet 400V
Text: HI-SINCERITY Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 1/4 MICROELECTRONICS CORP. HIRF740 / HIRF740F HIRF740 Series Pin Assignment Tab N-Channel Power MOSFET 400V, 10A 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate
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MOS200512
HIRF740
HIRF740F
O-220AB
O-220FP
183oC
217oC
260oC
HIRF740,
rf740
HIRF740F
mosfet 400V
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD WIRE WOUND FERRITE CHIP INDUCTORS SMD WIRE WOUND FERRITE CHIP INDUCTORS 0805F SERIES MECHANICAL DIMENSIONS Unit:mm Mechanical Dimensions: (Unit:mm) Electrical Specification Test SRF DCR RATED SRF DCR RATEDCOLOR Q Freq. MHz Ohm Ohm CURRENT MHz CURRENT
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0805F
0805F-78N-LFR
0805F-78Nâ
0805F-R11
0805F-R11â
0805F-R47
0805F-R18â
0805F-R68
0805F-R22â
HP4291B.
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PDF
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Untitled
Abstract: No abstract text available
Text: Molded Chip Wirewound Inductors NIN Series FEATURES • • • • • RoHS Compliant EIA SIZES A 1210 , B (1812), C (1008) AND D (0805) includes all homogeneous materials EXCELLENT HIGH Q AND HIGH SRF CHARACTERISTICS BOTH FLOW AND REFLOW SOLDERING APPLICABLE
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NIN-PA221KTRF
Abstract: NIN-PA680KTRF PA220K FB0805 NIN-PA331KTRF
Text: Molded Chip Wirewound Inductors NIN Series FEATURES • • • • • RoHS Compliant EIA SIZES A 1210 , B (1812), C (1008) AND D (0805) includes all homogeneous materials EXCELLENT HIGH Q AND HIGH SRF CHARACTERISTICS BOTH FLOW AND REFLOW SOLDERING APPLICABLE
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Untitled
Abstract: No abstract text available
Text: Molded Chip Wirewound Inductors NIN Series FEATURES • • • • • RoHS Compliant EIA SIZES A 1210 , B (1812), C (1008) AND D (0805) includes all homogeneous materials EXCELLENT HIGH Q AND HIGH SRF CHARACTERISTICS BOTH FLOW AND REFLOW SOLDERING APPLICABLE
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