S228
Abstract: ELS-512SRWB/S228 14.22mm 512srw
Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDS-512-011 REV: 1 Page: 1/5 0.56" Single Digit Displays ELS-512SRWB/S228 PART NO. : ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ● Instrument panels
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CDDS-512-011
ELS-512SRWB/S228
ELS-512
30min
S228
ELS-512SRWB/S228
14.22mm
512srw
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ELD-305HWB
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : DDD-305-019 REV: 1.0 Page: 1/5 0.3" Dual Digit Displays MODEL NO : ELD-305HWB/S225 ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ● Instrument panels
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DDD-305-019
ELD-305HWB/S225
ELD-305
30min
ELD-305HWB
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class D power amplifier 6.78 MHz
Abstract: S860T
Text: S860T Vishay Telefunken BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications
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S860T
S860T
D-74025
20-Jan-99
class D power amplifier 6.78 MHz
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S860T
Abstract: No abstract text available
Text: S860T Vishay Telefunken BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications
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S860T
S860T
D-74025
20-Jan-99
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Untitled
Abstract: No abstract text available
Text: S860T Vishay Telefunken BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications
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S860T
S860T
D-74025
20-Jan-99
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PDF
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557 sot-143 MARKING
Abstract: No abstract text available
Text: S860T Vishay Semiconductors BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications
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S860T
S860T
08-Apr-05
557 sot-143 MARKING
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S860T
Abstract: No abstract text available
Text: S860T Vishay Semiconductors BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications
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S860T
S860T
860lectual
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: S860T Vishay Telefunken BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications
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S860T
S860T
D-74025
20-Jan-99
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PDF
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class D power amplifier 6.78 MHz
Abstract: Vishay Semiconductors
Text: S860T Vishay Semiconductors BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications
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S860T
S860T
D-74025
20-Jan-99
class D power amplifier 6.78 MHz
Vishay Semiconductors
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b 57530
Abstract: 74183 117947 S860T 158951 57530
Text: S 860 T TELEFUNKEN Semiconductors BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications with
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900MHz
S860T
D-74025
b 57530
74183
117947
158951
57530
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PDF
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DIN 50016
Abstract: S2NG021 mcb design DC-13 13DC13
Text: S2K043 Safety relays - S2 series Contact expansion device for safty relays S2 series 4 delayed enabling current paths 2 signaling current paths 1 check-back current path For applications up to safety category 4 Stop category 0 Width 22.5mm Industrial design
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S2K043
S2K043
S2NG021
DIN 50016
S2NG021
mcb design
DC-13
13DC13
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S860T
Abstract: S-860
Text: S860T BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications with low power consumption. This allows to build amplifiers
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S860T
900MHz
S860T
D-74025
18-Apr-96
S-860
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1 928 404 745
Abstract: S860T class D power amplifier 6.78 MHz 146 telefunken
Text: S860T BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications with low power consumption. This allows to build amplifiers
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S860T
900MHz
S860T
D-74025
09-Apr-97
1 928 404 745
class D power amplifier 6.78 MHz
146 telefunken
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PDF
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S2NG021
Abstract: DIN 50016 DC-13
Text: S2KR403 Safety relays - S2 series Contact expansion device for safety relays S2 series 4 delayed enabling current paths 2 signaling current paths 1 check-back current path For applications up to safety category 4 Stop category 1 Width 22.5mm Industrial design
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S2KR403
S2KR403
S2NG021
S2NG021
DIN 50016
DC-13
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PDF
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Nippon capacitors
Abstract: No abstract text available
Text: MOTOROLA MRF1507 Cancelled The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment.
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MRF1507/D
MRF1507
DEVICEMRF1507/D
Nippon capacitors
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MRF1518NT1
Abstract: A113 AN211A AN215A AN721 MRF1518 MRF1518T1
Text: Freescale Semiconductor Technical Data MRF1518 Rev. 6, 3/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1518NT1 MRF1518T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF1518
MRF1518NT1
MRF1518T1
MRF1518NT1
A113
AN211A
AN215A
AN721
MRF1518
MRF1518T1
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PDF
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AN721
Abstract: MRF1513 zener diode z10 A113 AN211A AN215A MRF1513NT1 MRF1513T1 cgs diode
Text: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF1513
MRF1513NT1
MRF1513T1
MRF1513NT1
AN721
MRF1513
zener diode z10
A113
AN211A
AN215A
MRF1513T1
cgs diode
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PDF
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MHZ50
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF1513
MRF1513NT1
MRF1513T1
MHZ50
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MRF1511
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1511NT1 MRF1511T1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device
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MRF1511
MRF1511NT1
MRF1511T1
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S860T
Abstract: No abstract text available
Text: vtsMAY _ S860T ▼ Vishay Telefunken BIPMIC - Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. ^ M Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications
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OCR Scan
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S860T
D-74025
20-Jan-99
S860T
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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OCR Scan
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MRF5015
AN215A,
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PDF
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C1C14
Abstract: Motorola AR 164
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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OCR Scan
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MRF5035
AN215A,
C1C14
Motorola AR 164
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PDF
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mrf5015
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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OCR Scan
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MRF5015
AN215A,
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistor MRF5035 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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OCR Scan
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MRF5035
AN215A,
MRF5035.
AN721,
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PDF
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