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2n04h4 Abstract: infineon 2N04H4 SPB80N04S2-H4 SPP80N04S2-H4 Text: SPP80N04S2-H4 SPB80N04S2-H4 Preliminary data OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 40 RDS on 4 m ID 80 A P-TO263-3-2 Type Package Ordering Code	Original	SPP80N04S2-H4 SPB80N04S2-H4 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S6014 2N04H4 P-TO263-3-2 2n04h4 infineon 2N04H4 SPB80N04S2-H4 SPP80N04S2-H4	PDF
2n04h4 Abstract: infineon 2N04H4 ANPS071E SPB80N04S2-H4 SPI80N04S2-H4 SPP80N04S2-H4 Q67060-S6014 Text: SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on ID • 175°C operating temperature • Avalanche rated 40 P- TO262 -3-1 V 4 mΩ 80 P- TO263 -3-2 A P- TO220 -3-1	Original	SPI80N04S2-H4 SPP80N04S2-H4 SPB80N04S2-H4 SPP80N04S2-H4 Q67060-S6014 Q67060-S6013 2N04H4 2n04h4 infineon 2N04H4 ANPS071E SPB80N04S2-H4 SPI80N04S2-H4 Q67060-S6014	PDF
2N04H4 Abstract: SPB80N04S2-H4 ANPS071E SPI80N04S2-H4 SPP80N04S2-H4 infineon 2N04H4 Q67060-S6013 Text: SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on ID • 175°C operating temperature • Avalanche rated 40 P- TO262 -3-1 V 4 mΩ 80 P- TO263 -3-2 A P- TO220 -3-1	Original	SPI80N04S2-H4 SPP80N04S2-H4 SPB80N04S2-H4 SPP80N04S2-H4 Q67060-S6014 Q67060-S6013 2N04H4 Q67060-S6021 2N04H4 SPB80N04S2-H4 ANPS071E SPI80N04S2-H4 infineon 2N04H4 Q67060-S6013	PDF
infineon 2N04H4 Abstract: 2n04h4 Q67060-S6014 s5890 Text: SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 OptiMOS Power-Transistor Product Summary Feature 40 VDS N-Channel R DS on Enhancement mode 175°C operating temperature Avalanche rated ID P- TO262 -3-1 V m 4 80 P- TO263 -3-2 A P- TO220 -3-1 dv/dt rated	Original	SPI80N04S2-H4 SPP80N04S2-H4 SPB80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4 2N04H4 2N04H4 Q67060-S6014 infineon 2N04H4 s5890	PDF
2n04h4 Abstract: H4 SMD SPB80N04S2-H4 SPP80N04S2-H4 Q67040-S6014 infineon 2N04H4 Text: SPP80N04S2-H4 SPB80N04S2-H4 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel 40 R DS on • Enhancement mode ID •=175°C operating temperature • Avalanche rated V 4 mΩ 80 P-TO263-3-2 A P-TO220-3-1 1) • dv/dt rated	Original	SPP80N04S2-H4 SPB80N04S2-H4 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S6014 P-TO263-3-2 Q67040-S6013 2n04h4 H4 SMD SPB80N04S2-H4 SPP80N04S2-H4 Q67040-S6014 infineon 2N04H4	PDF
2n04h4 Abstract: infineon 2N04H4 DIODE h4 ANPS071E SPB80N04S2-H4 SPI80N04S2-H4 SPP80N04S2-H4 Text: SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P- TO262 -3-1 VDS 40 RDS on 4 m ID 80 A P- TO263 -3-2 Type Package Ordering Code	Original	SPI80N04S2-H4 SPP80N04S2-H4 SPB80N04S2-H4 SPP80N04S2-H4 Q67060-S6014 2N04H4 Q67060-S6013 2n04h4 infineon 2N04H4 DIODE h4 ANPS071E SPB80N04S2-H4 SPI80N04S2-H4	PDF
infineon 2N04H4 Abstract: Q67060-S6013 2n04h4 Text: SPP80N04S2-H4 SPB80N04S2-H4 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 40 V RDS on 4 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 1) • dv/dt rated	Original	SPP80N04S2-H4 SPB80N04S2-H4 P-TO220-3-1 P-TO263-3-2 P-TO220-3-1 Q67060-S6014 Q67060-S6013 infineon 2N04H4 Q67060-S6013 2n04h4	PDF
2n04h4 Abstract: IPI80N04S2-0H4 infineon 2N04H4 H4 SMD ANPS071E IPB80N04S2-H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2 2N-0 Text: IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.7 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow	Original	IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 2N04H4 IPP80N04S2-H4 2n04h4 IPI80N04S2-0H4 infineon 2N04H4 H4 SMD ANPS071E IPB80N04S2-H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2 2N-0	PDF
2n04h4 Abstract: SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2 Text: IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18165 2N04H4 2n04h4 SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2	PDF