Infineon moisture sensitive package
Abstract: EIA-726 EIA-747 label infineon barcode label infineon lot number barcode MSL label infineon lot number barcode JESD22B-102 label infineon lot number barcode label infineon J-STD-033
Text: R e c om m endati ons fo r P rin ted C i rc u i t Boar d Asse mbly o f Infineon TSL P /TSSLP/TS NP P ackages Ad d i tional Information June 2010 Table of Contents Table of Contents 1 Package Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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EIA-726
Abstract: EIA-747 Infineon moisture sensitive package MIPI design guideline spansion solder profile INFINEON trace code label EIA 783 samsung bluetooth ARM926EJ-S J-STD-033
Text: Recommendations for Printed Circuit Board Assembly Using Infineon PG-SON Packages Applic atio n Note DS1 October 2009 Wireless Solutions Edition 2009-10-06 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.
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MP 7721
Abstract: IEC6068-2-58 IPC 7351/7355 IPC-7351 to252 IPC 7355 JESD22-A111 JEDEC-J-STD-20 JESD22B-102 MICA WAFER J-STD-033
Text: Additional Information, DS1, March 2008 Recommendations for Assembly of Infineon TO Packages Edition 2008-03 Published by Infineon Technologies AG 81726 München, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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IPC/EIA/JEDEC-J-STD-001
J-STD-033/-020
JESD22-B102
MP 7721
IEC6068-2-58
IPC 7351/7355
IPC-7351 to252
IPC 7355
JESD22-A111
JEDEC-J-STD-20
JESD22B-102
MICA WAFER
J-STD-033
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Untitled
Abstract: No abstract text available
Text: PTMA080152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband driver applications in the 700 to 1000 MHz frequency range. It is offered in a 20-lead thermally-enhanced overmolded package for cool
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PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
JESD22-A114F.
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Untitled
Abstract: No abstract text available
Text: PTMA210152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in a 20-lead thermallyenhanced overmolded package for cool and reliable operation.
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PTMA210152M
PTMA210152M
15-watt,
20-lead
PG-DSO-20-63
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transistor c118
Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124
Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency
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PTMA080304M
PTMA080304M
20-lead
PG-DSO-20-63
a080304
transistor c118
C124 transistor
transisTOR C123
transistor c114 diagram
for C114 transistor
transistor c114
transistor c117
587-1352-1-ND
PM820
transistor C124
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transistor c114
Abstract: No abstract text available
Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency
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PTMA080304M
PTMA080304M
20-lead
transistor c114
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Untitled
Abstract: No abstract text available
Text: PTFC270051M advance specification Confidential, Limited Internal Distribution Description Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications
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PTFC270051M
PTFC270051M
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MIL-STD-1686A
Abstract: flatiron SC75 SCD80 smd tabellen INFINEON package tqfp PART MARKING 53063 label infineon lot number
Text: Application Support, Sep. 2002 Verarbeitungshinweise Notes on Processing Never stop thinking. Ausgabe 09.02 Edition 09.02 Herausgegeben von Infineon Technologies AG, St.-Martin-Strasse 53 81541 München Published by Infineon Technologies AG, St.-Martin-Strasse 53
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TLE5009
Abstract: TLE5009-E2010 TLE5009-E1010 TLE5009-E2000 TLE5009 application note TLE5009-E1000 "steering Angle Sensor" GMR SP000912764 RFMD SP000912770
Text: Angle Sensor GMR-Based Angular Sensor TLE5009 TLE5009-E2000 TLE5009-E1000 TLE5009-E2010 TLE5009-E1010 Data Sheet Rev. 0.9, 2011-07 Preliminary ATV SC Edition 2011-07 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG
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TLE5009
TLE5009-E2000
TLE5009-E1000
TLE5009-E2010
TLE5009-E1010
5009xxx
TLE5009
TLE5009-E1010
TLE5009 application note
"steering Angle Sensor" GMR
SP000912764
RFMD
SP000912770
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PTMA080152M
Abstract: RO4350 Infineon moisture sensitive package VARIABLE RESISTOR 2K
Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband
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PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
50-ohm
10-ohm
RO4350
Infineon moisture sensitive package
VARIABLE RESISTOR 2K
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Infineon moisture sensitive package
Abstract: No abstract text available
Text: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation
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PTMA080302M
PTMA080302M
30-watt,
20-lead,
PG-DSO-20-63
50-ohm
Infineon moisture sensitive package
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Infineon moisture sensitive package
Abstract: phototransistor MTBF optocoupler MTBF dual channel opto triac antiparallel scr double channel optocoupler infineon mtbf optocoupler triac infineon transistor working principle mtbf infineon
Text: Infineon technologies Optocoupler Manufacturing and Reliability The Concern for Optocoupler Reliability Because of the widespread use of optocouplers as an inter face device, optocoupler reliability has been a major con cern to circuit designers and components engineers. Pub
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1-888-lnfineon
Infineon moisture sensitive package
phototransistor MTBF
optocoupler MTBF
dual channel opto triac
antiparallel scr
double channel optocoupler
infineon mtbf
optocoupler triac infineon
transistor working principle
mtbf infineon
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GRM422Y5V106Z050AL
Abstract: PTMA180402M RO4350
Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications
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PTMA180402M
PTMA180402M
40-watt
20-pin,
PG-DSO-20-63
50-ohm
GRM422Y5V106Z050AL
RO4350
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transistor c124
Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use
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PTMA080304M
PTMA080304M
20-lead
PG-DSO-20-63
transistor c124
TL184
TL272
tl271
TL181
TL279
tl298
TL168
TL308
TL300
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Untitled
Abstract: No abstract text available
Text: Angle Sensor GMR-Based Angular Sensor TLE5009 TLE5009-E2000 TLE5009-E1000 TLE5009-E2010 TLE5009-E1010 Data Sheet Rev. 1.1, 2012-04 ATV SC Edition 2012-04 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
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TLE5009
TLE5009-E2000
TLE5009-E1000
TLE5009-E2010
TLE5009-E1010
5009xxx
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Untitled
Abstract: No abstract text available
Text: Angle Sensor GMR-Based Angular Sensor TLE5009 TLE5009-E2000 TLE5009-E1000 TLE5009-E2010 TLE5009-E1010 Data Sheet Rev. 1.1, 2012-04 ATV SC Edition 2012-04 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
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TLE5009
TLE5009-E2000
TLE5009-E1000
TLE5009-E2010
TLE5009-E1010
5009xxx
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TL272
Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use
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PTMA080304M
PTMA080304M
20-lead
PG-DSO-20-63
TL272
TL184
TL181
tl271
TL308
Tl187 transistor
tl274
TL293
TL193
TL148
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Untitled
Abstract: No abstract text available
Text: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 28 V, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation formats
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PTMA080302M
PTMA080302M
30-watt,
20-lead,
PG-DSO-20-63
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TL306
Abstract: TL184 TL167 TL307
Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use
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PTMA080304M
PTMA080304M
20-lead
PG-DSO-20-63
96stances.
TL306
TL184
TL167
TL307
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Untitled
Abstract: No abstract text available
Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband
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Original
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PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
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PDF
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Untitled
Abstract: No abstract text available
Text: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 28 V, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation formats
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Original
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PTMA080302M
PTMA080302M
30-watt,
20-lead,
PG-DSO-20-63
50-ohm
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PDF
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Untitled
Abstract: No abstract text available
Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband
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Original
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PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
50-ohm
10-ohm
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600F470
Abstract: 0647x GPS 9252 PG-DSO-20-6 Potentiometer 100 ohm
Text: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 28 V, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation formats
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PTMA080302M
PTMA080302M
30-watt,
20-lead,
PG-DSO-20-63
50-ohm
600F470
0647x
GPS 9252
PG-DSO-20-6
Potentiometer 100 ohm
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