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    INFINEON MOSFET PARAMETER TEST Search Results

    INFINEON MOSFET PARAMETER TEST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    INFINEON MOSFET PARAMETER TEST Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LH1485AT/AAB/AABTR Optically Coupled High Speed MOSFET Drivers FEATURES • • • • Package Dimensions in Inches mm Fast Turn On Fast Turn Off Low Input Current Isolation Test Voltage, 5300 VACRMS DIP 2 1 5 4 1 2 3 S 4 5 6 S' .256 (6.50) .248 (6.30)


    Original     		LH1485AT/AAB/AABTR E52744 LH1485 2N2222 1-888-Inï PDF

    2n2222 -331

    Abstract: transistor 2N2222 SMD 6 PIN SMD IC FOR 15 W LED DRIVERS 2n2222 a 331 transistor 2N2222 SMD configuration 2n2222 smd SMD 6 PIN IC 2N2222 2n2222 331 photo diode array infineon MOSFET parameter test
    Text: LH1485AT/AAB/AABTR Optically Coupled High Speed MOSFET Drivers FEATURES • • • • • Package Dimensions in Inches mm Fast Turn On Fast Turn Off Low Input Current Isolation Test Voltage, 5300 VACRMS Flammability; UL94,VØ DIP 2 1 5 4 1 2 3 S 4 5 6


    Original     		LH1485AT/AAB/AABTR E52744 1-888-Infineon LH1485 2N2222 2n2222 -331 transistor 2N2222 SMD 6 PIN SMD IC FOR 15 W LED DRIVERS 2n2222 a 331 transistor 2N2222 SMD configuration 2n2222 smd SMD 6 PIN IC 2N2222 2n2222 331 photo diode array infineon MOSFET parameter test PDF

    6 PIN SMD IC FOR 15 W LED DRIVERS

    Abstract: LH1485 6-pin smd zener 1485AT smd capa
    Text: LH1485AT/A AB/A ABTR Optically Coupled High Speed MOSFET Drivers FEATURES Package Dimensions in Inches mm • Fast Turn On DIP • Fast Turn Off Pin One ID. • Low Input Current f3i [2i rii T • Isolation Test Voltage, 5300 VACRMS .256 (6.50) .248 (6.30)


    OCR Scan     		LH1485AT/A E52744 1-888-lnfineon 1485AT/AAB/AABTR LH1485 6 PIN SMD IC FOR 15 W LED DRIVERS 6-pin smd zener 1485AT smd capa PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC0923NDI Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 5 2.8 mW VGS=4.5 V 7 3.7 40 40 VDS • Optimized for high performance Buck converter RDS on ,max • Logic level (4.5V rated) • 100% avalanche tested


    Original     		BSC0923NDI IEC61249-2-21 0923NDI PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet,Version 2.1, April 21, 2011 ICE2QS03 Quasi-Resonant Controller PWM Power Management & Supply N e v e r s t o p t h i n k i n g . ICE2QS03 Revision History: April 21, 2011 Previous Version: 2.0 Page17 Datasheet test condition Iout changed from 20mA to 10mA


    Original     		ICE2QS03 ICE2QS03ï Page17 PDF

    tda4864

    Abstract: zero crossing detector mosfet MUR115 1N4937 ICE1PD165G IEC555 active harmonic filter infineon MOSFET parameter test
    Text: Infineon Technologies preliminary ICE1PD165G Power Factor Controller + Cool- MOS: BoostSET IC for High Power Factor and low THD •=IC for sinusoidal line-current consumption •=Controller and CoolMOS within one package •=P-DSO-16-10 •=Power factor achieves nearly 1


    Original     		ICE1PD165G P-DSO-16-10 0-150V 1N4937 MUR115 TDA4864 tda4864 zero crossing detector mosfet MUR115 1N4937 ICE1PD165G IEC555 active harmonic filter infineon MOSFET parameter test PDF

    zero crossing detector FOR 3 PHASE SUPPLY

    Abstract: 1N4937 ICE1PD265G IEC555 MUR115 P-DSO-16-1 CoolMOS power ic active harmonic filter 500 coolmos
    Text: Infineon Technologies preliminary ICE1PD265G Power Factor Controller + Cool- MOS: BoostSET IC for High Power Factor and low THD =IC for sinusoidal line-current consumption =Controller and CoolMOS within one package =P-DSO-16-10 =Power factor achieves nearly 1


    Original     		ICE1PD265G P-DSO-16-10 0-270V 1N4937 MUR115 ICE1PD265 zero crossing detector FOR 3 PHASE SUPPLY 1N4937 ICE1PD265G IEC555 MUR115 P-DSO-16-1 CoolMOS power ic active harmonic filter 500 coolmos PDF

    4863g

    Abstract: 4863g IC pin connection ic tda4863 4863G datasheet TDA 4863 infineon MOSFET parameter test E36/11 tda4863 equivalent rs-flip-flop block diagram TDA4863 application note
    Text: Infineon Technologies preliminary Power Factor Controller TDA4863 Boost Controller IC for High Power Factor and low THD •=IC for sinusoidal line-current consumption •=Power factor achieves nearly 1 •=Controls boost converter as active harmonic filter for low THD


    Original     		TDA4863 E36/11 MR856 0-270V SPP04N60S5 4863g 4863g IC pin connection ic tda4863 4863G datasheet TDA 4863 infineon MOSFET parameter test tda4863 equivalent rs-flip-flop block diagram TDA4863 application note PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC0923NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 30 30 V VGS=10 V 5 2.8 mW VGS=4.5 V 7 3.7 40 40 • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter VDS • Logic level 4.5V rated RDS(on),max • 100% avalanche tested


    Original     		BSC0923NDI IEC61249-2-21 0923NDI PDF

    4863g

    Abstract: TDA4863 4863g IC TDA 4863 220v ac to 9v dc converter 4863G datasheet zero crossing detector mosfet 220V ac to 12V dc 8 amps power supply circuit Q67040-S4451 zero crossing detector ic with 90v
    Text: preliminary Power Factor Controller TDA4863 Boost Controller IC for High Power Factor and low THD • IC for sinusoidal line-current consumption · Power factor achieves nearly 1 · Controls boost converter as active harmonic filter for low THD · Start up with low current consumption


    Original     		TDA4863 140mA, 4863g TDA4863 4863g IC TDA 4863 220v ac to 9v dc converter 4863G datasheet zero crossing detector mosfet 220V ac to 12V dc 8 amps power supply circuit Q67040-S4451 zero crossing detector ic with 90v PDF

    bjt transistor pnp

    Abstract: MOSFET C65 l3 sot323-3 dvbt tuner FREF10 crystal generator 1GHz DVB-T nim infineon tuner IC SMD code l32 SMD FM IC tuner
    Text: Wireless Components Application Note of DVB-T COFDM Tuner with Broadband Multimedia IC, TUA6034 Version 2 (Revised including DVB-T Field Test and Half NIM with TDA6192T) Applications of IC, TUA6034 : Specially Suitable for Digital Broadcasting Standards like DVB-T, DVB-C, ISDB-T, ATSC, etc.


    Original     		TUA6034 TDA6192T) BB565, BB659C 858MHz 858MHz, 650uA TUA6034 60dBuV, bjt transistor pnp MOSFET C65 l3 sot323-3 dvbt tuner FREF10 crystal generator 1GHz DVB-T nim infineon tuner IC SMD code l32 SMD FM IC tuner PDF

    65C6070

    Abstract: infineon MOSFET parameter test diode marking SJ 65C6 ipw65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		IPW65R070C6 726-IPW65R070C6 65C6070 infineon MOSFET parameter test diode marking SJ 65C6 ipw65r PDF

    4863g

    Abstract: 4863g IC TDA4863G zero crossing detector mosfet tda4863-2 TDA4863 TDA48632
    Text: preliminary Power Factor Controller TDA4863 Boost Controller IC for High Power Factor and low THD =IC for sinusoidal line-current consumption =Power factor achieves nearly 1 =Controls boost converter as active harmonic filter for low THD  Start up with low current consumption


    Original     		TDA4863 0-270V 750uH E36/11 MR856 SPP04N60S5 TDA4863 4863g 4863g IC TDA4863G zero crossing detector mosfet tda4863-2 TDA48632 PDF

    Untitled

    Abstract: No abstract text available
    Text: High -P erf or manc e Dr BL AD E 5 mm x 5 mm x 0.6 mm IQFN TD A21 310 Dat a She et Revision 2.1, 2013-09-05 Po wer Ma nage m ent and M ulti M ark e t Edition 2013-09-05 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG


    Original     		TDA21310 LG-UIQFN-32-2 PDF

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


    Original     		B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz PDF

    Untitled

    Abstract: No abstract text available
    Text: 1EDI EiceDRIVER Compact Separate output variant for MOSFET Single Channel MOSFET Gate Driver IC 1EDI60N12AF Preliminary Data Sheet Rev. 1.00, 2013-11-20 Industrial Power Control Edition 2013-11-20 Published by Infineon Technologies AG 81726 Munich, Germany


    Original     		1EDI60N12AF PDF

    PX3516ADDG-R4

    Abstract: PX75XX VR12 intel VR12 PX3516ADDG Primarion Digital Power Management UG170
    Text: Synchronous Rectified Buck MOSFET Driver IC PX3516 Synchronous Rectified Buck MOSFET Driver IC PX3516 March 16th - 2010 Published by Infineon Technologies AG http://www.infineon.com/DCDC Power Management 1of 12 PX3516 PX3516 Synchronous Rectified Buck MOSFET Driver IC


    Original     		PX3516 PX3516 PX35xx/ PX85xx PX3516ADDG-R4 PX75XX VR12 intel VR12 PX3516ADDG Primarion Digital Power Management UG170 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC0925ND OptiMOSTM Power-MOSFET Product Summary Features • Dual N-channel OptiMOS MOSFET • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance VDS 30 V RDS on ,max 5 mW ID 40 A QOSS 8.6 nC QG(0V.10V) 13 nC • Optimized for high performance Buck converter


    Original     		BSC0925ND IEC61249-2-21 0925ND PDF

    DD15

    Abstract: No abstract text available
    Text: BSC0925ND OptiMOSTM Power-MOSFET Product Summary Features • Dual N-channel OptiMOS MOSFET • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance VDS 30 V RDS on ,max 5 mW ID 40 A QOSS 8.6 nC QG(0V.10V) 13 nC • Optimized for high performance Buck converter


    Original     		BSC0925ND IEC61249-2-21 0925ND DD15 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC0925ND OptiMOSTM Power-MOSFET Product Summary Features • Dual N-channel OptiMOS MOSFET • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance VDS 30 V RDS on ,max 5 mW ID 40 A QOSS 8.6 nC QG(0V.10V) 13 nC • Optimized for high performance Buck converter


    Original     		BSC0925ND IEC61249-2-21 0925ND PDF

    transistor d30

    Abstract: BSC0925ND DD15 0925ND
    Text: BSC0925ND TM OptiMOS Power-MOSFET Product Summary Features • Dual N-channel OptiMOS MOSFET • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance VDS 30 V RDS on ,max 4.5 mΩ ID 40 A QOSS 8.6 nC QG(0V.10V) 13 nC


    Original     		BSC0925ND IEC61249-2-21 0925ND transistor d30 BSC0925ND DD15 0925ND PDF

    6r3k3c6

    Abstract: transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.0, 2010-07-21 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R3K3C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		IPD60R3K3C6 6r3k3c6 transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22 PDF

    6r070c6

    Abstract: 6R070C6 MOSFET TRANSISTOR
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description


    Original     		IPW60R070C6 6r070c6 6R070C6 MOSFET TRANSISTOR PDF

    6r070c6

    Abstract: IPW60R070C6 IF-258 JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description


    Original     		IPW60R070C6 6r070c6 IPW60R070C6 IF-258 JESD22 PDF