RF POWER TRANSISTOR NPN 3GHz
Abstract: NPN marking MCs 1741 transistor equivalent table BGB540-Chip BFP540 spice
Text: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , A u g . 2 0 0 1 BGB 540 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-16 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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RF POWER TRANSISTOR NPN 3GHz
NPN marking MCs
1741 transistor equivalent table
BGB540-Chip
BFP540 spice
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BFP540
Abstract: Transistor BFP540 BGB540 GPS05605 T0559
Text: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , D e c . 2 0 0 0 y BGB 540 li m in ar Active Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-12-04 Published by Infineon Technologies AG,
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N02 Transistor
Abstract: AG TRANSISTOR transistor n02 Infineon Technologies transistor 4 ghz high frequency transistor array nh02
Text: Infineon Technologies AG - Infineon Technologies AG Seite 1 von 3 Infineon Homepage High-Speed ASSPs and Bipolar ASICs Please Select A Topic Products - High-Speed ASSPs and Bipolar ASICs Array Architecture 6 GHz Analog Array 1. General information The analog are is designed for high frequency applications up to 6 GHz. The architecture of the analog area is
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N02 Transistor
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transistor n02
Infineon Technologies transistor 4 ghz
high frequency transistor array
nh02
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transistor bfp420
Abstract: INFINEON BFP420 Ams BFP420 equivalent BFP420 application notes S parameters of 4 GHz transistor
Text: SIEGET 25 BFP420 NPN Silicon RF Transistor 3 For high gain low noise amplifiers 4 For oscillators up to 10 GHz Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP420
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transistor bfp420
INFINEON BFP420 Ams
BFP420 equivalent
BFP420 application notes
S parameters of 4 GHz transistor
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bfp740
Abstract: what is technical report 5Ghz lna transistor datasheet TR104 BFP740 application note infineon marking L2 RF Bipolar Transistor LNA CIRCUIT
Text: Technical Report, 2008-Nov-21 Technical Report BFP740 LNA for 3.5GHz WiMax Application Technical Report TR104 Device: BFP740 Application: LNA for 3.5 GHz WiMax Application Revision: Rev. 1.0 Date:
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what is technical report
5Ghz lna transistor datasheet
TR104
BFP740 application note
infineon marking L2
RF Bipolar Transistor
LNA CIRCUIT
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transistor BC 245
Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the
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Abstract: No abstract text available
Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability
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Abstract: No abstract text available
Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3 For low current applications 4 For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP420 application notes
Abstract: Transistor BFP420 BFP420
Text: SIEGET 25 BFP420 NPN Silicon RF Transistor 3 For high gain low noise amplifiers 4 For oscillators up to 10 GHz Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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Abstract: No abstract text available
Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability
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BFP420 application notes
Abstract: INFINEON BFP420 (Ams) INFINEON BFP420 Ams BFP420 BGA420
Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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TRANSISTOR MARKING FA
Abstract: EHA07307 CJE marking diode
Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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TRANSISTOR MARKING FA
EHA07307
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EHA07307
Abstract: CJE marking diode
Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP740
Abstract: BFP740 application note TR103 bfp740 board
Text: Technical Report, 2008-Dec-03 Technical Report LNA using BFP740 for 2.3 – 2.7 GHz WiMax Application Technical Report TR103 Device: BFP740 Application: WiMax LNA for 2.3 – 2.7 GHz Revision: Rev. 1.0
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Infineon Technologies transistor 4 ghz
Abstract: BFP405 BGA420
Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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INFINEON BFP420 Ams
Abstract: BFP420 BGA420
Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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Untitled
Abstract: No abstract text available
Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP405F
Abstract: BFP420F TSFP-4
Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP405 ALs
Abstract: No abstract text available
Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3 For low current applications 4 For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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marking ans
Abstract: BFP450 BGA420
Text: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability
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Untitled
Abstract: No abstract text available
Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP181
Abstract: BFP182
Text: BFP182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description
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BFP450
Abstract: BGA420
Text: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability
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Untitled
Abstract: No abstract text available
Text: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description
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