xgold dual sim
Abstract: No abstract text available
Text: Product Brief X-GOLDTM102 DS GSM Single-Chip for Dual-SIM support Main Features The X-GOLD 102 DS is an extension of the Infineon single-chip family providing entertainment features to ULC handsets at lowest cost. The singlechip is an ideal solution for dual SIM ULC Music Phones, supporting key
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X-GOLDTM102
C166V2
104MHz
XMMTM1028
B153-H9339-X-X-7600
NB08-1293
xgold dual sim
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infineon x-gold
Abstract: C166 X-GOLD xgold dual sim
Text: Product Brief X-GOLDTM102 DS GSM Single-Chip for Dual-SIM support Main Features The X-GOLD 102 DS is an extension of the Infineon single-chip family providing entertainment features to ULC handsets at lowest cost. The singlechip is an ideal solution for dual SIM ULC Music Phones, supporting key
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X-GOLDTM102
C166V2
104MHz
XMMTM1028
B153-H9339-G1-X-7600
NB08-1343
infineon x-gold
C166
X-GOLD
xgold dual sim
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Infineon X-GOLD 102
Abstract: PG-VF2BGA-189 infineon x-gold X-GOLD 102 X-GOLD C166V2 XMMTM1020 xgoldtm102 infineon gold teaklite
Text: Product Brief X-GOLDTM102 Single-Chip Solution for ULC color and music phones Main Features The X-GOLD 102 is an extension of the Infineon single-chip family providing entertainment features to ULC handsets at lowest cost. The singlechip is an ideal solution for ULC Music Phones supporting key features such
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X-GOLDTM102
C166V2
X-GOLDTM102
XMMTM1020
B153-H9338-G1-X-7600
NB08-1343
Infineon X-GOLD 102
PG-VF2BGA-189
infineon x-gold
X-GOLD 102
X-GOLD
C166V2
xgoldtm102
infineon gold
teaklite
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Untitled
Abstract: No abstract text available
Text: PTF 102098 LDMOS RF Power Field Effect Transistor 90 Watts, 1805–1880 MHz, 1930–1990 MHz Description The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS or PCS bands. This LDMOS device operates at 47% efficiency P–1dB and 14.5 dB linear gain. Full
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1522-PTF
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rogers 4003 characteristics
Abstract: No abstract text available
Text: PTF 102003 LDMOS RF Power Field Effect Transistor 120 Watts, 2110–2170 MHz Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P–1dB and 14 dB linear gain. Full gold
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1522-PTF
rogers 4003 characteristics
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Untitled
Abstract: No abstract text available
Text: PTF 102079 LDMOS RF Power Field Effect Transistor 30 Watt, DCS/PCS Band, 1930–1990 MHz Description Key Features The PTF 102079 is a 30–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P–1dB . Full gold metallization ensures excellent device lifetime and reliability.
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1522-PTF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY GOLDMOS Field Effect Transistor 180 Watts, 2110-2170 MHz PTF 102022* Description Key Features The PTF 102022 is a 180–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. A laterally double-diffused push-pull FET, it operates with 13.5 dB linear gain. Full gold metallization
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1-877-GOLDMOS
1522-PTF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY GOLDMOS Field Effect Transistor 45 Watts, 2110-2170 MHz Description Key Features The PTF 102088 is a 45–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110-2170 MHz. This device typically operates at 47% efficiency at P-1dB with a linear gain of
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84MHz,
10MHz
15MHz
480mA,
14GHz
1-877-GOLDMOS
1522-PTF
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PTF+102015
Abstract: PTF102015 102015
Text: PTF 102015 LDMOS RF Power Field Effect Transistor 30 Watts, 2110–2170 MHz Description Key Features The PTF 102015 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device operates at 47% efficiency with 16 dB gain. Full gold metallization ensures
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1522-PTF
PTF+102015
PTF102015
102015
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY GOLDMOS Field Effect Transistor 30 Watts, 1800-2000 MHz PTF 102079* Description Key Features The PTF 102079 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 1800 to 2000 MHz. This LDMOS device operates at 47% efficiency with 15 dB gain. Nitride
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1-877-GOLDMOS
1522-PTF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watt, DCS/PCS Band PTF 102098* Description Key Features The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P-1dB and 14.5 dB linear gain. Full gold metallization
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PCD1287CT
P220ECT
1-877-GOLDMOS
1522-PTF
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Untitled
Abstract: No abstract text available
Text: PTF 102022 LDMOS RF Power Field Effect Transistor 180 Watts, 2110–2170 MHz Description Key Features The PTF 102022 is a 180 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. A laterally double– diffused push–pull FET, it operates with 14 dB linear gain. Full gold
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1522-PTF
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Untitled
Abstract: No abstract text available
Text: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold
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1/16W
1-877-GOLDMOS
1522-PTF
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a1r8
Abstract: No abstract text available
Text: 30 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102015 Description Key Features The PTF 102015 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device operates at 47% efficiency with 16 dB gain. Full gold metallization ensures
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1-877-GOLDMOS
1522-PTF
a1r8
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY GOLDMOS Field Effect Transistor 125 Watts, 2110-2170 MHz PTF 102093* Description Key Features The PTF 102093 is a 125–watt, GOLDMOS FET intended for WCDMA applications. The device is characterized for single and two carrier WCDMA operation in the 2110 to 2170 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
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1-877-GOLDMOS
1522-PTF
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Untitled
Abstract: No abstract text available
Text: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2.62 to 2.68 GHz. Thermally-enhanced
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PTFA260451E
PTFA260451F
45-watt,
CDMA2000
PTFA260451F*
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A19045
Abstract: No abstract text available
Text: PTFA190451E PTFA190451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTFA190451E
PTFA190451F
45-watt,
H-30265-2
H-31265-2
A19045
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PTF210451E
Abstract: PTF210451F 200B1
Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.
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PTF210451E
PTF210451F
PTF210451E
PTF210451F
45-watt
200B1
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PTF140451E
Abstract: CAPACITOR 33PF 1kv elna 50v 200B BCP56 LM7805 PTF140451F r025 capacitor 103 1KV CERAMIC CAPACITOR "micron technology" c16
Text: PTF140451E PTF140451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 – 1550 MHz PTF140451E Package 30265 Description The PTF140451E and PTF140451F are 45-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital Audio Broadcast operation in the 1450 to
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PTF140451E
PTF140451F
PTF140451E
PTF140451F
45-watt,
CAPACITOR 33PF 1kv
elna 50v
200B
BCP56
LM7805
r025 capacitor
103 1KV CERAMIC CAPACITOR
"micron technology" c16
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Untitled
Abstract: No abstract text available
Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTFA210601E
PTFA210601F
60-watt,
H-30265-2
PTFA210601F*
H-31265-2
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PTFA210601E
Abstract: No abstract text available
Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTFA210601E
PTFA210601F
60watt,
PTFA210601F*
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Untitled
Abstract: No abstract text available
Text: PTF140451E PTF140451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 – 1550 MHz Description PTF140451E Package 30265 The PTF140451E and PTF140451F are 45-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital Audio Broadcast operation in the 1450 to
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PTF140451E
PTF140451F
PTF140451E
PTF140451F
45-watt,
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512m pc133 SDRAM DIMM 168
Abstract: 512m pc133 SDRAM DIMM PC100-222 PC133-222 PC133-333
Text: HYS 64/72V128220GU SDRAM-Modules 3.3 V 128M x 64/72-Bit, 1024 MByte SDRAM Modules 168-pin Unbuffered DIMM Modules Target Datasheet 11.01 • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory
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64/72V128220GU
64/72-Bit,
168-pin
256Mbit
PC100-222,
PC133-333
PC133-222
L-DIM-168-30
512m pc133 SDRAM DIMM 168
512m pc133 SDRAM DIMM
PC100-222
PC133-222
PC133-333
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Untitled
Abstract: No abstract text available
Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest
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PTF210451E
PTF210451F
45-watt
PTF210451F*
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