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    INFINEON X-GOLD 102 Search Results

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    xgold dual sim

    Abstract: No abstract text available
    Text: Product Brief X-GOLDTM102 DS GSM Single-Chip for Dual-SIM support Main Features The X-GOLD 102 DS is an extension of the Infineon single-chip family providing entertainment features to ULC handsets at lowest cost. The singlechip is an ideal solution for dual SIM ULC Music Phones, supporting key


    Original     		PDF X-GOLDTM102 C166V2 104MHz XMMTM1028 B153-H9339-X-X-7600 NB08-1293 xgold dual sim

    infineon x-gold

    Abstract: C166 X-GOLD xgold dual sim
    Text: Product Brief X-GOLDTM102 DS GSM Single-Chip for Dual-SIM support Main Features The X-GOLD 102 DS is an extension of the Infineon single-chip family providing entertainment features to ULC handsets at lowest cost. The singlechip is an ideal solution for dual SIM ULC Music Phones, supporting key


    Original     		PDF X-GOLDTM102 C166V2 104MHz XMMTM1028 B153-H9339-G1-X-7600 NB08-1343 infineon x-gold C166 X-GOLD xgold dual sim

    Infineon X-GOLD 102

    Abstract: PG-VF2BGA-189 infineon x-gold X-GOLD 102 X-GOLD C166V2 XMMTM1020 xgoldtm102 infineon gold teaklite
    Text: Product Brief X-GOLDTM102 Single-Chip Solution for ULC color and music phones Main Features The X-GOLD 102 is an extension of the Infineon single-chip family providing entertainment features to ULC handsets at lowest cost. The singlechip is an ideal solution for ULC Music Phones supporting key features such


    Original     		PDF X-GOLDTM102 C166V2 X-GOLDTM102 XMMTM1020 B153-H9338-G1-X-7600 NB08-1343 Infineon X-GOLD 102 PG-VF2BGA-189 infineon x-gold X-GOLD 102 X-GOLD C166V2 xgoldtm102 infineon gold teaklite

    Untitled

    Abstract: No abstract text available
    Text: PTF 102098 LDMOS RF Power Field Effect Transistor 90 Watts, 1805–1880 MHz, 1930–1990 MHz Description The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS or PCS bands. This LDMOS device operates at 47% efficiency P–1dB and 14.5 dB linear gain. Full


    Original     		PDF 1522-PTF

    rogers 4003 characteristics

    Abstract: No abstract text available
    Text: PTF 102003 LDMOS RF Power Field Effect Transistor 120 Watts, 2110–2170 MHz Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P–1dB and 14 dB linear gain. Full gold


    Original     		PDF 1522-PTF rogers 4003 characteristics

    Untitled

    Abstract: No abstract text available
    Text: PTF 102079 LDMOS RF Power Field Effect Transistor 30 Watt, DCS/PCS Band, 1930–1990 MHz Description Key Features The PTF 102079 is a 30–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P–1dB . Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 180 Watts, 2110-2170 MHz PTF 102022* Description Key Features The PTF 102022 is a 180–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. A laterally double-diffused push-pull FET, it operates with 13.5 dB linear gain. Full gold metallization


    Original     		PDF 1-877-GOLDMOS 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 45 Watts, 2110-2170 MHz Description Key Features The PTF 102088 is a 45–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110-2170 MHz. This device typically operates at 47% efficiency at P-1dB with a linear gain of


    Original     		PDF 84MHz, 10MHz 15MHz 480mA, 14GHz 1-877-GOLDMOS 1522-PTF

    PTF+102015

    Abstract: PTF102015 102015
    Text: PTF 102015 LDMOS RF Power Field Effect Transistor 30 Watts, 2110–2170 MHz Description Key Features The PTF 102015 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device operates at 47% efficiency with 16 dB gain. Full gold metallization ensures


    Original     		PDF 1522-PTF PTF+102015 PTF102015 102015

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 30 Watts, 1800-2000 MHz PTF 102079* Description Key Features The PTF 102079 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 1800 to 2000 MHz. This LDMOS device operates at 47% efficiency with 15 dB gain. Nitride


    Original     		PDF 1-877-GOLDMOS 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watt, DCS/PCS Band PTF 102098* Description Key Features The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P-1dB and 14.5 dB linear gain. Full gold metallization


    Original     		PDF PCD1287CT P220ECT 1-877-GOLDMOS 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: PTF 102022 LDMOS RF Power Field Effect Transistor 180 Watts, 2110–2170 MHz Description Key Features The PTF 102022 is a 180 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. A laterally double– diffused push–pull FET, it operates with 14 dB linear gain. Full gold


    Original     		PDF 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold


    Original     		PDF 1/16W 1-877-GOLDMOS 1522-PTF

    a1r8

    Abstract: No abstract text available
    Text: 30 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102015 Description Key Features The PTF 102015 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device operates at 47% efficiency with 16 dB gain. Full gold metallization ensures


    Original     		PDF 1-877-GOLDMOS 1522-PTF a1r8

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 125 Watts, 2110-2170 MHz PTF 102093* Description Key Features The PTF 102093 is a 125–watt, GOLDMOS FET intended for WCDMA applications. The device is characterized for single and two carrier WCDMA operation in the 2110 to 2170 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF 1-877-GOLDMOS 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2.62 to 2.68 GHz. Thermally-enhanced


    Original     		PDF PTFA260451E PTFA260451F 45-watt, CDMA2000 PTFA260451F*

    A19045

    Abstract: No abstract text available
    Text: PTFA190451E PTFA190451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA190451E PTFA190451F 45-watt, H-30265-2 H-31265-2 A19045

    PTF210451E

    Abstract: PTF210451F 200B1
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.


    Original     		PDF PTF210451E PTF210451F PTF210451E PTF210451F 45-watt 200B1

    PTF140451E

    Abstract: CAPACITOR 33PF 1kv elna 50v 200B BCP56 LM7805 PTF140451F r025 capacitor 103 1KV CERAMIC CAPACITOR "micron technology" c16
    Text: PTF140451E PTF140451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 – 1550 MHz PTF140451E Package 30265 Description The PTF140451E and PTF140451F are 45-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital Audio Broadcast operation in the 1450 to


    Original     		PDF PTF140451E PTF140451F PTF140451E PTF140451F 45-watt, CAPACITOR 33PF 1kv elna 50v 200B BCP56 LM7805 r025 capacitor 103 1KV CERAMIC CAPACITOR "micron technology" c16

    Untitled

    Abstract: No abstract text available
    Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA210601E PTFA210601F 60-watt, H-30265-2 PTFA210601F* H-31265-2

    PTFA210601E

    Abstract: No abstract text available
    Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA210601E PTFA210601F 60watt, PTFA210601F*

    Untitled

    Abstract: No abstract text available
    Text: PTF140451E PTF140451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 – 1550 MHz Description PTF140451E Package 30265 The PTF140451E and PTF140451F are 45-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital Audio Broadcast operation in the 1450 to


    Original     		PDF PTF140451E PTF140451F PTF140451E PTF140451F 45-watt,

    512m pc133 SDRAM DIMM 168

    Abstract: 512m pc133 SDRAM DIMM PC100-222 PC133-222 PC133-333
    Text: HYS 64/72V128220GU SDRAM-Modules 3.3 V 128M x 64/72-Bit, 1024 MByte SDRAM Modules 168-pin Unbuffered DIMM Modules Target Datasheet 11.01 • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory


    Original     		PDF 64/72V128220GU 64/72-Bit, 168-pin 256Mbit PC100-222, PC133-333 PC133-222 L-DIM-168-30 512m pc133 SDRAM DIMM 168 512m pc133 SDRAM DIMM PC100-222 PC133-222 PC133-333

    Untitled

    Abstract: No abstract text available
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF210451E PTF210451F 45-watt PTF210451F*