LM7805 smd
Abstract: LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds
Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small
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PTF180101M
PTF180101M
10-watt
PG-RFP-10
LM7805 smd
LM7805 smd 8 pin
LM7805 M SMD
SMD TRANSISTOR MARKING l4
LM7805
smd transistor marking wa
LM7805 05
lm7805 datasheet
C17-R2
elna ds
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LM7805 smd
Abstract: LM7805 smd transistor marking C14
Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency
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PTF180101M
PTF180101M
10-watt
PTF180101M*
TSSOP-10
LM7805 smd
LM7805
smd transistor marking C14
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creative 5.1 audio circuit
Abstract: p07003 BOXD815EEAA D815EEA P070031 PBA FET A10379-402 a10380 CMOS BATTERY P07-0031
Text: Product Change Notification # 101471-00 Information in this document is provided in connection with Intelâ â products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s
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BOXD815EEAA
BOXD815EEAAL
A10380-402
A10378-402
A10380-403
A10378-403
creative 5.1 audio circuit
p07003
BOXD815EEAA
D815EEA
P070031
PBA FET
A10379-402
a10380
CMOS BATTERY
P07-0031
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LM7805 M SMD
Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small
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PTF180101M
PTF180101M
10-watt
PG-RFP-10
LM7805 M SMD
LM7805 smd
LM7805 footprint
PG-RFP-10
RO4320
smd transistor marking C14 8
LM7805
smd transistor marking L5
LM7805 smd VOLTAGE REGULATOR
elna 50v
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LM7805 M SMD
Abstract: LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1
Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in
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PTF210101M
PTF210101M
10-watt
PG-RFP-10
LM7805 M SMD
LM7805 smd 8 pin
LM7805 smd
smd lm7805
LM7805 05
LM7805
LM7805 footprint
lm7805 datasheet
P221E
marking us capacitor pf l1
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LM7805 smd 8 pin
Abstract: LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1
Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in
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PTF080101M
PTF080101M
10-watt
PG-RFP-10
LM7805 smd 8 pin
LM7805 smd
smd lm7805
LM7805 M SMD
SMD package marking ab l16
JX900
LM7805 05
LM7805
C5 MARKING TRANSISTOR
marking us capacitor pf l1
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Untitled
Abstract: No abstract text available
Text: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the DCS band. Full gold metallization ensures
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PTFA181001E
PTFA181001F
100-watt,
H-30248-2
H-31248-2
1880dangerous
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R80515 evatronix
Abstract: R80515 Evatronix SAB80C537 80C31 ASM51 16 BIT ALU design with verilog hdl code
Text: R80515 8-bit Microcontroller Megafunction General Description The R80515 is a fast, single-chip, 8-bit microcontroller that executes all ASM51 instructions. It has the same instruction set as the 80C31, but executes operations an average of 8 times faster.
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R80515
R80515
ASM51
80C31,
16-bit
R80515 evatronix
Evatronix
SAB80C537
80C31
16 BIT ALU design with verilog hdl code
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elna capacitor 22uf
Abstract: No abstract text available
Text: PTFA041001E PTFA041001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 460 – 470 MHz Description The PTFA041001E and PTFA041001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for GSM/ EDGE applications. Thermally-enhanced packaging provides the
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PTFA041001E
PTFA041001F
100-watt,
H-30248-2
PTFA041001FT
H-31248-2
elna capacitor 22uf
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LM7805
Abstract: H-30265-2 lm 2094
Text: PTFA210701E Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E is a thermally-enhanced, 70-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
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PTFA210701E
PTFA210701E
70-watt,
H-30265-2
PTFA210701F*
H-31265-2
LM7805
H-30265-2
lm 2094
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PTFA043002
Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The
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PTFA043002E
PTFA043002
300-watt,
H-30275-4
PTFA043002E
SCHEMATIC DIAGRAM 3.3kv
type 103 capacitor, 2kv RF, 1300 pf
marking us capacitor pf l1
BCP56
LM7805
300WPEP
P33K
TRANSISTOR 023 3010
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PTFA082201E
Abstract: RO4350 elna 50v elna capacitor BCP56 LM7805 PTFA082201F ceramic capacitor 39 pf A34 rf 35V ELNA Electrolytic capacitor
Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in
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PTFA082201E
PTFA082201F
PTFA082201E
PTFA082201F
220-watt
RO4350
elna 50v
elna capacitor
BCP56
LM7805
ceramic capacitor 39 pf
A34 rf
35V ELNA Electrolytic capacitor
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ptfa192001e
Abstract: PTFA192001E V4 LM7805 PTFA192001F RO4350 PCS3475CT-ND
Text: PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications
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PTFA192001E
PTFA192001F
PTFA192001E
PTFA192001F
200-watt
H-36260-2
H-37260-2
PTFA192001E V4
LM7805
RO4350
PCS3475CT-ND
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a1807
Abstract: PTFA180701E PTF180701E A3563 1800 ldmos BCP56 LM7805 PTFA180701F RO4350 H-36265-2
Text: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with
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PTFA180701E
PTFA180701F
PTFA180701E
PTFA180701F
70-watt
H-36265-2
H-37265-2
a1807
PTF180701E
A3563
1800 ldmos
BCP56
LM7805
RO4350
H-36265-2
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10 ohms potentiometer
Abstract: 08051J100GBTTR BCP56 LM7805 PTFA182001E RO4350
Text: PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 MHz Description The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz. Features include input and output
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PTFA182001E
PTFA182001E
200-watt
10 ohms potentiometer
08051J100GBTTR
BCP56
LM7805
RO4350
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ceramic capacitor 103 z 2kv
Abstract: No abstract text available
Text: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and
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PTFA091201E
PTFA091201F
120-watt,
ceramic capacitor 103 z 2kv
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A19045
Abstract: No abstract text available
Text: PTFA190451E PTFA190451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTFA190451E
PTFA190451F
45-watt,
H-30265-2
H-31265-2
A19045
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PTFA043002E
Abstract: SCHEMATIC DIAGRAM 3.3kv
Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. Thermallyenhanced packaging provides the coolest operation available. Full gold
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PTFA043002E
PTFA043002
300-watt,
PTFA043002E
SCHEMATIC DIAGRAM 3.3kv
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8051 address decoder
Abstract: R80515 evatronix int6 in 8051 R80515 80C31 ASM51 intel 8051 OPCODES
Text: R80515 8-bit RISC-like Microcontroller Core General Description The R80515 is a fast, single-chip, 8-bit microcontroller that executes all ASM51 instructions. It has the same instruction set as the 80C31, but executes operations an average of 8 times faster.
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R80515
R80515
ASM51
80C31,
8051 address decoder
R80515 evatronix
int6 in 8051
80C31
intel 8051 OPCODES
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BCP56
Abstract: LM7805 PTFA190451E PTFA190451F RO4350
Text: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,
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PTFA190451E
PTFA190451F
PTFA190451E
PTFA190451F
45-watt,
H-36265-2
H-37265-2
BCP56
LM7805
RO4350
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LM7805
Abstract: elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 PTFA181001GL ELNA capacitor 100 uf 50v
Text: Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the
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PTFA181001GL
PTFA181001HL
PTFA181001GL
100-watt
LM7805
elna 50v, 1uF
LM7805 voltage regulator
d 1879 TRANSISTOR
BCP56
ELNA capacitor 100 uf 50v
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a2324
Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
Text: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,
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PTFA192401E
PTFA192401F
PTFA192401E
PTFA192401F
240-watt
H-36260-2
H-37260-2
a2324
RF35
RO4350
BCP56
LM7805
PTFA192401F V4
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Untitled
Abstract: No abstract text available
Text: PTFA192001E PTFA192001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,
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PTFA192001E
PTFA192001F
200-watt
H-36260-2
H-37260-2
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Abstract: No abstract text available
Text: PTFA080551E PTFA080551F Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz Description The PTFA080551E and PTFA080551F are 55-watt, internally matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz band. Thermally-enhanced
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PTFA080551E
PTFA080551F
55-watt,
CDMA2000
9of11
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