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    INFRARED EMITTING DIODE TO18 Search Results

    INFRARED EMITTING DIODE TO18 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    INFRARED EMITTING DIODE TO18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant intensity without external optics.


    Original     		PDF TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 18-Jul-08

    TSTA7300

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant intensity without external optics.


    Original     		PDF TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant intensity without external optics.


    Original     		PDF TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant intensity without external optics.


    Original     		PDF TSTA7300 TSTA7300 2002/95/EC 2002/96/EC D-74025 08-Mar-05

    Untitled

    Abstract: No abstract text available
    Text: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant intensity without external optics.


    Original     		PDF TSTA7100 TSTA7100 2002/95/EC 2002/96/EC 08-Apr-05

    TSTA7100

    Abstract: No abstract text available
    Text: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant intensity without external optics.


    Original     		PDF TSTA7100 TSTA7100 2002/95/EC 2002/96/EC D-74025 08-Mar-05

    Untitled

    Abstract: No abstract text available
    Text: TSTA7500 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its flat glass window makes it ideal for use with external optics.


    Original     		PDF TSTA7500 TSTA7500 2002/95/EC 2002/96/EC D-74025 08-Mar-05

    Untitled

    Abstract: No abstract text available
    Text: TSTA7500 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its flat glass window makes it ideal for use with external optics.


    Original     		PDF TSTA7500 TSTA7500 2002/95/EC 2002/96/EC 08-Apr-05

    TSTA7100

    Abstract: No abstract text available
    Text: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant intensity without external optics.


    Original     		PDF TSTA7100 TSTA7100 2002/95/EC 2002/96/EC 08-Apr-05

    TSTA7500

    Abstract: No abstract text available
    Text: TSTA7500 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its flat glass window makes it ideal for use with external optics.


    Original     		PDF TSTA7500 TSTA7500 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: AUK CORP. Infrared Emitting Diode KFL-1ML-N Description The KFL-1ML-N is high power, wide beam angle GaAlAs infrared emitting diode with TO-18 metal stem and clear epoxy lens. this device is relatively low-cost compared to TO-18 can type devices. Pin Connection


    Original     		PDF 850nm

    Untitled

    Abstract: No abstract text available
    Text: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics.


    Original     		PDF TSTS7100 TSTS710. 2002/95/EC 2002/96/EC 08-Apr-05

    TSTS710

    Abstract: No abstract text available
    Text: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics.


    Original     		PDF TSTS7100 TSTS710. 2002/95/EC 2002/96/EC D-74025 08-Mar-05 TSTS710

    TSTS730

    Abstract: TSTS7300
    Text: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high radiant intensity without external optics.


    Original     		PDF TSTS7300 TSTS730. 2002/95/EC 2002/96/EC 08-Apr-05 TSTS730 TSTS7300

    TSTA7500

    Abstract: No abstract text available
    Text: TSTA7500 Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its flat glass window makes it


    Original     		PDF TSTA7500 TSTA7500 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high radiant intensity without external optics.


    Original     		PDF TSTS7300 TSTS730. 2002/95/EC 2002/96/EC 08-Apr-05

    TSTS730

    Abstract: TSTS7300
    Text: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high radiant intensity without external optics.


    Original     		PDF TSTS7300 TSTS730. 2002/95/EC 2002/96/EC D-74025 08-Mar-05 TSTS730 TSTS7300

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC 30E D • h42752S 005=^44 Ô ■ LIGHT EMITTING T-M/-U DIODE SE301A GaAs INFRARED EMITTING DIODE INDUSTRIAL USE DESCRIPTION The SE301A is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on a TO-18 hermetically sealed header


    OCR Scan     		PDF h42752S SE301A SE301A 940nm. M27525

    SE301A

    Abstract: 30mWI
    Text: N E C 30E D ELECTRONICS INC • h42752S 005=^44 fi ■ LIGHT EMITTING DIODE SE301A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE DESCRIPTION The SE301A is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on a TO-18 hermetically sealed header


    OCR Scan     		PDF h42752S SE301A SE301A 940nm, T-41-11 ta-259c) AM81ENT 30mWI

    OLD222

    Abstract: No abstract text available
    Text: OKI electronic components OLD222_ GaAs infrared Light Emitting Diode GENERAL DESCRIPTION The OLD222 is a high-output GaAlAs infrared light emitting diode sealed with a glass lens in a To18 case. Its light emission wavelength peaks at 910 ran. Because of its high reliability, the OLD222


    OCR Scan     		PDF OLD222_ OLD222 100mA OLD222

    Untitled

    Abstract: No abstract text available
    Text: K2P0Ült>-27-32 O K I electronic components OLP222 H_ GaAIAs Infrared Light Emitting Diode with Non-Spherical Surface Lens GENERAL DESCRIPTION The OLD222H is a high-output GaAIAs infrared light emitting diode sealed with a glass lens in a


    OCR Scan     		PDF OLP222 OLD222H OLD222H

    IE-15KA

    Abstract: No abstract text available
    Text: Waitrony Infrared Emitting Diode Module No.: IE-15KA 1. General Description: Dimensions IE-15KA is a high output power GaAs infrared light emitting diode, mounted in a durable, hermetically sealed TO-18 metal can package, which provide years of reliable performance even under demanding


    OCR Scan     		PDF IE-15KA IE-15KA 940nm.

    Untitled

    Abstract: No abstract text available
    Text: OKI electronic components OLP124 _ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emitting diode sealed with a transparent resin in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Because of its high reliability, the


    OCR Scan     		PDF OLP124 OLD124 OLD124

    old123

    Abstract: No abstract text available
    Text: OKI electronic components GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD123 is a high-output GaAs infrared light emitting diode sealed with a flat glass in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Beause of its high reliability, the OLD! 23


    OCR Scan     		PDF OLD123 OLD123