infrared diode
Abstract: TRANSISTOR C 2577 GL4800E0000F Infrared Emitting Diode Infrared Phototransistor infrared emitting CIRCUIT infrared infrared transistor GL527V INFRARED DIODES
Text: Copyright 2005, Sharp Electronics Corp. All Rights Reserved. Chapter 3 – Use of Infrared Emitting Diodes 3-1 Chapter 3 – Use of Infrared Emitting Diodes 3-2 Chapter 3 – Use of Infrared Emitting Diodes 3-3 multiplied by n. Chapter 3 – Use of Infrared Emitting Diodes
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TRANSISTOR D 880
Abstract: H21A1 photodiode TRansistor A 940 k 30 transistor l14f1 photodiode 022 020 transistor transistor l14f1 optologic 0118 transistor L14G2 transistor
Text: Fairchild Semiconductor Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes continued Mfr.Õs Type Fig. Power Out Min. VF Max. Peak Emission Wavelength (nm) Beam Angle 1/2 Angle (¡) F5F1
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LED55B
LED55C
LED56
LED56F
QEB421
QEC113
QEC122
QED123
QED222
QED233
TRANSISTOR D 880
H21A1 photodiode
TRansistor A 940
k 30 transistor
l14f1 photodiode
022 020 transistor
transistor l14f1
optologic
0118 transistor
L14G2 transistor
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side view infrared diode sharp
Abstract: GP2Y0A60 GP2Y10 GP2Y0A60SZ0F/GP2Y0A60SZLF GP2Y0AF15
Text: INFRARED EMITTING DIODE LINEUP / INFRARED EMITTING DIODES OPTO • Infrared Emitting Diode Lineup Type Single-end lead Side view type Surface mount type Package Half intensity angle Features Epoxy resin with lens Epoxy resin with lens/ leadless General purpose/Narrow beam angle
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GL480E00000F
GL4800E0000F
GL100MN0MP
GL100MN1MP
GL100MD1MP1
GP2Y0AH01K0Fâ
GP2Y1010AU0F
GP2Y1012AU0F
GP2Y1023AU0F
side view infrared diode sharp
GP2Y0A60
GP2Y10
GP2Y0A60SZ0F/GP2Y0A60SZLF
GP2Y0AF15
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KDA0429
Abstract: KP-1608F3C KP-1608SF4C
Text: INFRARED EMITTING DIODES KP-1608F3C KP-1608SF4C Description Features ! WATER CLEAR LENS AVAILABLE. F3 Made with Gallium Arsenide Infrared Emitting ! 1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. diodes. !HIGH POWER OUTPUT. SF4 Made with Gallium Aluminum Arsenide Infrared
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KP-1608F3C
KP-1608SF4C
2000PCS
KDA0429
SEP/21/2001
KDA0429
KP-1608F3C
KP-1608SF4C
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Untitled
Abstract: No abstract text available
Text: INFRA-RED EMITTING DIODES KP-1608F3C KP-1608SF4C Features ! Description WATER CLEAR LENS AVAILABLE. ! 1.6mmx0.8mm ! HIGH F3 Made with Gallium Arsenide Infrared Emitting diodes. SMT LED, 1.1mm THICKNESS. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting
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KP-1608F3C
KP-1608SF4C
KDA0429
SEP/21/2001
KP-1608F3C
KP-1608SF4C
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AP1608F3C
Abstract: AP1608SF4C
Text: INFRA-RED EMITTING DIODES AP1608F3C AP1608SF4C Features ! WATER Description CLEAR LENS AVAILABLE. ! 1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting ! HIGH POWER OUTPUT. ! PACKAGE: F3 Made with Gallium Arsenide Infrared Emitting diodes.
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AP1608F3C
AP1608SF4C
2000PCS/REEL.
CDA0508
NOV/12/2001
AP1608F3C
AP1608SF4C
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm
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LN162S
Abstract: GaAs 1000 nm Infrared Emitting Diode
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :
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LN162S
LN162S
GaAs 1000 nm Infrared Emitting Diode
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical
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LN189S
LN189S
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Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:
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LN162S
CTRLR102-001
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LN162S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :
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LN162S
LN162S
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical
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LN189S
LN189S
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Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189M
100mA
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189L
LN189L
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Untitled
Abstract: No abstract text available
Text: Infrared Emitting Diodes
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AP 1100 R1
Abstract: LN58
Text: Panasonic Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency : P0 = 3.5 mW typ. « Light emitting spectrum suited for silicon photodetectors a Infrared light emission close to monochromatic light :
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infrared detectors
Abstract: Infrared Emitting Diode LNA2601L
Text: Panasonic Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm
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LNA2601L
infrared detectors
Infrared Emitting Diode
LNA2601L
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Untitled
Abstract: No abstract text available
Text: CONTENTS INFRARED EMITTING DIODES. 6 VERTICAL CAVITY SURFACE EMITTING LASERS. 63
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Abstract: No abstract text available
Text: CONTENTS INFRARED EMITTING DIODES. 6 VERTICAL CAVITY SURFACE EMITTING LASERS. 63
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN54 G aAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • High-power output, high-efficiency : PQ = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to monochromatic light :
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V30K20
Abstract: L440 diode GaAs 1000 nm Infrared Emitting Diode Infrared Emitting Diode LN54 LA440
Text: Panasonic Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to m onochromatic light :
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Untitled
Abstract: No abstract text available
Text: European “Pro Electron” Registered Types _ CQX14, CQX15, CQX16, CQX17 Infrared Emitter GaAs Infrared Emitting Diode The CQX14, CQX15, C.QX16, CQXI7 series are gallium arsenide, light emitting diodes which emit non-coherent, infrared energy with a peak wave
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CQX14,
CQX15,
CQX16,
CQX17
CQX14
CQX16
CQX17
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Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors
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100mA
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IR Blue Light infrared
Abstract: LN66
Text: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors
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100mA
IR Blue Light infrared
LN66
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