InGaAs PIN photodiode 2600 nm
Abstract: epitaxx InGaAs Epitaxx ingaas photodetector
Text: EPITAXX INC 2ME D 33bQilDi, 0Q00Q75 5 t EPITAXX ETX1006R26 qi-m 2.6 |im InGaAs Photodiode Description: EPITAXX ETX 100GR26 is an InGaAs PIN photodiode which responds to wavelengths up to 2600 nm. The device incorporates a 100 micron diameter compositionally graded
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33bQilDi,
0Q00Q75
ETX1006R26
100GR26
2400nm
100GR
33bQ40b
0QD007b
ETX100GR26
InGaAs PIN photodiode 2600 nm
epitaxx
InGaAs Epitaxx
ingaas photodetector
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InGaAs PIN photodiode 2600 nm
Abstract: EPITAXX D 331 LIDAR InGaAs photodiode InGaAs Epitaxx 2400nm smv shunt ETX100GR26 T046
Text: EPITAXX INC 2ME D 3 3 b Q 0000075 5 IEPITAXX ETX1006R26 2.6 ,um InGaAs Photodiode Description: EPITAXX ETX 100GR26 is an InGaAs PIN photodiode which responds to wavelengths up to 2600 nm. The device incorporates a 100 micron diameter compositionally graded
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ETX100GR26
100GR26
S-60Q
InGaAs PIN photodiode 2600 nm
EPITAXX
D 331
LIDAR
InGaAs photodiode
InGaAs Epitaxx
2400nm
smv shunt
ETX100GR26
T046
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epitaxx
Abstract: InGaAs Epitaxx
Text: EPITAXX INC 5 ME D • 33b040b GDGGDbl T EPITAXX ETX 60B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 60B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at
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33b040b
epitaxx
InGaAs Epitaxx
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Untitled
Abstract: No abstract text available
Text: Epi EPM600FJ-S/M IÜ H B Pigtailed, High Speed InGaAs Photodetector Module Preliminary Specifications Features • High responsivity at 1300 nm and 1550 nm ■ Bandwidth greater than 1 GHz ■ Hermetically sealed InGaAs photodiode ■ Rugged coaxial package
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EPM600FJ-S/M
33hD4Db
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PDF
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epitaxx
Abstract: 750IFJ
Text: EPITAXX INC 10E » | 33bOHOt 0Q0003i 1 | ~ Y / ~ o7 Prel imirary Pnxluct Information ERM 7 5 0 1FJ EPITAXX InGaAs Planar PIN Photodiode! GaAs FET Hybrid Receiver Module DESCRIPTION T h e ERM 7501FJ is a h y b rid device containing a high speed InGaAs p lan ar
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33bOHOt
0Q0003i
7501FJ
7501FJ
7501FC
epitaxx
750IFJ
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PDF
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microdot connector
Abstract: epitaxx ETX300
Text: E P I T A X X INC i S4 E D • 33bG4Qb DOOOOTl 3 ETX 20Q0/3QQ0TE, ETX1OQODE/DS EPITAXX Thermoelectric and Liquid Nitrogen Cooled InGaAs Photodiodes Description: EPITAXX ETX 2000TE AND ETX3000TE are thermoelectrically cooled InGaAs photodiodes with 2 and 3mm active diameter respectively. The photodiodes are mounted
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33bG4Qb
20Q0/3QQ0TE,
2000TE
ETX3000TE
1000DE
microdot connector
epitaxx
ETX300
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PDF
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EPITAXX
Abstract: peltier cooler InGaAs Epitaxx ETX3000TE 3000TE ETX300
Text: E P I T A X X INC 2ME D EPITAXX 33bG40b DOOOOTl 3 ETX 2000/30Q0TE, ETX1000DE/DS I T -4 I-M I Thermoelectric and Liquid Nitrogen Cooled InGaAs Photodiodes Description: EPITAXX ETX 2000TE AND ETX3000TE are thermoelectrically cooled InGaAs photodiodes with 2 and 3mm active diameter respectively. The photodiodes are mounted
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B3b04Dh
2000/3000TE,
ETX1000DE/DS
2000TE
ETX3000TE
10OODE
EPITAXX
peltier cooler
InGaAs Epitaxx
3000TE
ETX300
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EPITAXX
Abstract: ETX505Q epitaxx quadrant InGaAs Epitaxx ETX 40 EPITAXX 40
Text: EPITAXX INC 54E D m 33b0M0b 0D00GÔ3 4 Ï EPITAXX ETX1Q5D, ETX505Q T '-m-m Dual and Quadrant Position Sensing InGaAs Photodiodes Description: EPITAXX ETX 105D and ETX 505Q are InGaAs bi-cell and quadrant photodiodes. They are sensitive in the near infrared spectrum and are characterized by low noise and long
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33b0M0b
0D00QÃ
ETX505Q
EPITAXX
ETX505Q
epitaxx quadrant
InGaAs Epitaxx
ETX 40
EPITAXX 40
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InGaas PIN photodiode chip
Abstract: EPITAXX EPITAXX 25b InGaas PIN photodiode chip back illuminated InGaAs photodiode 0G001 100C rise time of photodiode ETX 40 EPITAXX etx-25b
Text: EPITAXX SQE » INC • 33b0H0b GQG01S0 H H E P X " 7 ^ 4 fcHII A A A ETX 25B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 25B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at
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33b040b
1300nm
10kHz
InGaas PIN photodiode chip
EPITAXX
EPITAXX 25b
InGaas PIN photodiode chip back illuminated
InGaAs photodiode
0G001
100C
rise time of photodiode
ETX 40
EPITAXX etx-25b
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InGaAs Epitaxx
Abstract: EPITAXX InGaas PIN photodiode chip InGaas PIN photodiode chip back illuminated 100C
Text: E P I T A X X INC S4E D • 33b040b DODDDbT T ■ EPITAXX ETX 60B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 60B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at
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33b040b
-T74MU
33b0M0b
D00GG70
200pS/div
InGaAs Epitaxx
EPITAXX
InGaas PIN photodiode chip
InGaas PIN photodiode chip back illuminated
100C
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Untitled
Abstract: No abstract text available
Text: E P I T A X X INC SME 33bG40b QOGGGTS 0 D ÉEPITAXX ETX 30LA 8,16 & 32 InGaAs Linear Photodiode Arrays " T ^ l-S S Description: EPITAXX ETX 30LA 8 ,1 6 and 32 are linear arrays of 8,1 6 and 32 InGaAs photodiodes. The individual elements are 30 micrometer square and can be individually addressed. The
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33bG40b
33fci040b
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PDF
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EPITAXX ETX 300
Abstract: EPITAXX ETX 300T EPITAXX InGaAs Epitaxx PIN photodiode ps T046 ETX 40
Text: E P I T A X X INC D 33ta040ti DOOOOÔS Ô EPITAXX ETX 300T High Speed InGaAs PIN Photodiode Description: EPITAXX ETX 300T is a general purpose InGaAs planar pin photodiode. The device incorporates a bOOyi/m chip in a flat window T046 can. It is well suited for both optical communications and infrared
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33ta0M0ti
300CER-CUS)
33b04Db
EPITAXX ETX 300
EPITAXX ETX 300T
EPITAXX
InGaAs Epitaxx
PIN photodiode ps
T046
ETX 40
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EPITAXX ETX 300T
Abstract: epitaxx InGaAs Epitaxx
Text: E P I T A X X INC 54E D • 33b040b 00000Ô5 B U EPITAXX ETX 300T High Speed InGaAs PIN Photodiode Description: EPITAXX ETX 300T is a general purpose InGaAs planar pin photodiode. The device incorporates a 300yum chip in a flat window T046 can. It is well suited for both optical communications and infrared
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33b040b
300yum
300CER-CUS)
EPITAXX ETX 300T
epitaxx
InGaAs Epitaxx
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PDF
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Untitled
Abstract: No abstract text available
Text: EPITAXX SQE » INC • 3BbQ4Qti GQGG1S0 H H E P X " 7 ^ 4 fcKII A A A ETX 25B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 25B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at
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25/am
1300nm
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epitaxx
Abstract: No abstract text available
Text: E P 1 T A X X INC 24E D • 33b040b □□□□□63 4 ■ lEPnMo^^^^^^ETjnosaETgow T-m-m Dual and Quadrant Position Sensing InGaAs Photodiodes Description: EPITAXX ETX 105D and ETX 505Q are InGaAs bi-cell and quadrant photodiodes. They are sensitive in the near infrared spectrum and are characterized by low noise and long
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33b040b
Opt15
ETX505Q
33b04Dti
ETX505Q
epitaxx
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PDF
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PIN photodiode 1550 5ghz
Abstract: InGaas PIN photodiode, 1550 5ghz EPM820FJ-S 609J DC-5GHZ
Text: iPi EPM820FJ-S Microwave InGaAs Photodiode Module With 50Q Matching Circuit Applications Features - Electro-optical • High speed InGaAs PIN photodiode ■ Responsivity > 0 .5 AAV at 1330 nm or 1550 nm ■ B andw idth o f > 10 GHz ■ Ripple < ± 1.5 dB from DC to 5 GHz
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33bD4Db
0DQ0333
PIN photodiode 1550 5ghz
InGaas PIN photodiode, 1550 5ghz
EPM820FJ-S
609J
DC-5GHZ
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PDF
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EPITAXX
Abstract: FC Receptacle 100TL/FC
Text: E P I T A X X INC EME D • 3 3 L 0 4 0 b 000007^ 2 ■ EPITAXX ETX 100TL/FC T-41-50 InGaAs PIN Photodiode in FC Receptacle EPITAXX ETX 100TL/FC is a high speed planar InGaAs PIN photodiode mounted in a FC receptacle. It is designed for board or panel mounting in short haul telecom or datacom
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33L040b
000007e]
100TL/FC
T-41-50
100TL/FC
10mA3)
33b040b
200pS/div
100TL/FC2
EPITAXX
FC Receptacle
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PDF
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photodetector
Abstract: EPITAXX ingaas photodetector
Text: EPM 600FJ-S/M Pigtailed, High Speed InGaAs Photodetector Module Prelim inary Specifications Features • H igh responsivity a t 1300 nm and 1550 nm ■ B a n d w id th greater th a n 1 GHz ■ H erm etically sealed InGaAs p h o to d io d e ■ Rugged coaxial package
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EPM600FJ-S/M
33b04Dfc.
photodetector
EPITAXX
ingaas photodetector
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PDF
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EPITAXX
Abstract: lm 257 st ETX100TL-ST EPITAXX ETX 75
Text: E P I T A X X INC BME D • 3 3 b 0 4 0 b ÜOOOOfil G ■ EPITAXX ETX 10OTL/ST r T -4 1 -5 0 InGaAs Pin Photodiode in ST Receptacle Description: EPITAXX ETX 100TL/ST is a high speed planar InGaAs PIN photodiode mounted in an ST connector receptacle. It is designed for board or panel mounting in short haul telecom or datacom receivers. It
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33b040b
10OTL/ST
T-41-50
100TL/ST
33b0M0b
00GD0Ã
200pS/div
EPITAXX
lm 257 st
ETX100TL-ST
EPITAXX ETX 75
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DIODE T5
Abstract: ETX10LIN24-T5 ETX20LIN22-T5 ETX 40 epitaxx 20LIN22-T5
Text: E T X 10L IN 24-T 5 E T X 20L IN 22-T 5 Large A rea InGaAs PIN P h otod iod es L in e a r a b o v e 2 0 dB m I n p u t P o w e r Features • Chip centered to ±125 um relative to header Electro-Optical ■ InGaAs PIN Photodiode w ith high responsivity at 1300 and 1550 nm
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ETX10LIN24-T5
ETX20LIN22-T5
10LIN24-T5!
ETX20UN22-T5
I0UN24-T5
10LIN24-T5,
20LIN22-T5
DIODE T5
ETX20LIN22-T5
ETX 40
epitaxx
20LIN22-T5
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PDF
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ERM505RFC2
Abstract: erm505 ERM505RFC ERM505RST I1103 PIN-TIA fip 450 EPITAXX ingaas detector
Text: EPXTAXX INC EPITAXX SOE D in c . • 33bÜ40b T «EPX _ ERM505 OPTOELECTRONIC DEVICES Sonet OC-12 PIN-Transimpedance Amplifier Receiver Modules Preliminary Product Specification FEATURES * InGaAs PIN Photodiode and GaAs Transimpedance Amplifier * Meets Sonet sensitivity and
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ERMS05
OC-12
ERM505
ERM505RFC2
ERM505FJ/FC
ERM505RFC2
ERM505RFC
ERM505RST
I1103
PIN-TIA
fip 450
EPITAXX ingaas detector
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PDF
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Detector with Pigtail 1550 nm
Abstract: EPITAXX EPM700J Fabry-Perot-Laser 1550 pin Photodiode 1550 nm connector RADIALL EPX Radiall detector coaxial inGaAs photodiode 1550 InGaas PIN photodiode chip InGaas PIN photodiode, 1550
Text: EPITAXX INC SOE D m 33b04Qb OOÜOlMb 2 • EPX 53 EPITAXX_ EPM70° Low Distortion InGaAs PIN Photodiode for CATV / Analog Video Features Low interm odulation distortion Low optical back reflection Low capacitance High responsivity at 1330 nm and 1550 nm
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33b04Qb
EPM70Â
EPM700
Detector with Pigtail 1550 nm
EPITAXX
EPM700J
Fabry-Perot-Laser 1550
pin Photodiode 1550 nm
connector RADIALL EPX
Radiall detector coaxial
inGaAs photodiode 1550
InGaas PIN photodiode chip
InGaas PIN photodiode, 1550
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EPITAXX
Abstract: T05 Package InGaAs photodiode ETX 40 Hz172 two color photodiode TWO COLOR DETECTOR LC InGaAs This two color detector is useful in temperature sensing applications
Text: 33b040b 000Q1SE ö H E P X SGE D EPITAXX INC IEPITAXX ETX 2000SI Si/lnGaAs Two Color Photodiodes Description: EPITAXX ETX 2000Si combines a 2.5 mm diameter Silicon photodiode over a 2.0 mm diameter InGaAs photodiode within a hermetic T05 package. This combination device
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33b040b
000Q1SE
2000SI
2000Si
33bQMQb
EPITAXX
T05 Package
InGaAs photodiode
ETX 40
Hz172
two color photodiode
TWO COLOR DETECTOR
LC InGaAs
This two color detector is useful in temperature sensing applications
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PDF
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PIN Photodiode For CATV Receiver
Abstract: 1-e t77 EPITAXX pin Photodiode 1550 nm EPM710J-FJ-S
Text: EPI - EPM71OJ-FJ-S Lo w Distortion InGaAs PIN Photodiode for 860 MHz AM CA W Features • ■ ■ ■ ■ Low intermodulation distortion High responsivity at 1330 nm or 1550 nm Low capacitance
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EPM71OJ-FJ-S
33b040b
PIN Photodiode For CATV Receiver
1-e t77
EPITAXX
pin Photodiode 1550 nm
EPM710J-FJ-S
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