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    INGAAS PHOTODIODES 1310 1550 Search Results

    INGAAS PHOTODIODES 1310 1550 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MLC1550-452MLC Coilcraft Inc General Purpose Inductor, 4.5uH, 20%, 1 Element, Iron-Core, SMD, 5452, CHIP, 5452, ROHS COMPLIANT Visit Coilcraft Inc
    MLC1550-452MLB Coilcraft Inc General Purpose Inductor, 4.5uH, 20%, 1 Element, Iron-Core, SMD, 5452, CHIP, 5452, ROHS COMPLIANT Visit Coilcraft Inc
    MLC1550-102MLB Coilcraft Inc General Purpose Inductor, 1uH, 20%, 1 Element, Iron-Core, SMD, 5452, CHIP, 5452, ROHS COMPLIANT Visit Coilcraft Inc
    MLC1550-452MXB Coilcraft Inc General Purpose Inductor, 4.5uH, 20%, 1 Element, SMD, ROHS COMPLIANT Visit Coilcraft Inc Buy
    MLC1550-252MLC Coilcraft Inc General Purpose Inductor, 2.5uH, 20%, 1 Element, Iron-Core, SMD, 5452, CHIP, 5452, ROHS COMPLIANT Visit Coilcraft Inc

    INGAAS PHOTODIODES 1310 1550 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VCSEL die bonding

    Abstract: SATURN PY-CM11
    Text: AXT PRODUCT INFORMATION 1300/1550nm InGaAs Monitoring PIN Photodiodes Part number: PY-CM11 Characteristics T=300K Conditions Wavelength range Responsivity Dark current Reverse breakdown Capacitance -3 V 1µA - 3 V, 1 MHz Min. 910 0.8 Typical 1310 0.85 Max.


    Original     		PDF 1300/1550nm PY-CM11 1310nm 460X460 PY-CM11 VCSEL die bonding SATURN

    forward reverse schematic diagram

    Abstract: R-11-055-G-B R-11-075-G-B R-11-075-G-BB R-11-100-G-B R-11-300-G-B InGaAs photodiodes 1310 1550
    Text: InGaAs PIN Photodiodes R-11-055-G-B • R-11-075-G-B/BB • R-11-100-G-B • R-11-300-G-B Features • InGaAs/ InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85˚C operating temperature


    Original     		PDF R-11-055-G-B R-11-075-G-B/BB R-11-100-G-B R-11-300-G-B R-11-055-G-B LUMNDS008-0402 forward reverse schematic diagram R-11-075-G-B R-11-075-G-BB R-11-100-G-B R-11-300-G-B InGaAs photodiodes 1310 1550

    Ge APD

    Abstract: PD-LD analog laser diode 6 GHz
    Text: Analog InGaAs PIN Detectors Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 70 micron diameter active area detector that responds optimally to both 1310 and 1550


    Original     		PDF

    EPM635-75

    Abstract: JDS Uniphase photodiode epm JDSU EPM InGaAs EPM 6xx JDS Uniphase photodiode epm 605 635-75 InGaas PIN photodiode, 1550 sensitivity pin photodiode 2 GHz 1550 epm 6xx series
    Text: OPTICAL COMMUNICATIONS C-Band, L-Band, Pass-Band Low-Leakage PIN Photodiodes EPM 6xx Series Key Features • Electro-optical - Low back reflection - High responsivity in L-band at 1625 nm EPM 606 • Packaging - Single-mode 900 µm fiber with or without a connector


    Original     		PDF 498-JDSU 5378-JDSU EPM635-75 JDS Uniphase photodiode epm JDSU EPM InGaAs EPM 6xx JDS Uniphase photodiode epm 605 635-75 InGaas PIN photodiode, 1550 sensitivity pin photodiode 2 GHz 1550 epm 6xx series

    InGaas PIN photodiode, 1550 ,sensitivity

    Abstract: JDS Uniphase photodiode epm 605 InGaAs photodiodes 1310 1550 PIN Photodiode 4 Ghz 1550 nm JDS Uniphase photodiode epm pin photodiode 1550 sensitivity JDSU EPM
    Text: Product Bulletin C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes EPM 6xx Series The JDS Uniphase EPM 6xx Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in


    Original     		PDF

    JDSU EPM

    Abstract: JDS Uniphase photodiode epm 605 EDFA L-C band pin photodiode 2 GHz 1550 EPM635
    Text: OPTICAL Communications C-Band, L-Band, Pass-Band Low-Leakage PIN Photodiodes EPM 6xx Series Key Features • Electro-optical − Low back reflection − High responsivity in L-band at 1625 nm EPM 606 • Packaging − Single-mode 900 µm fiber with or without a connector


    Original     		PDF 498-JDSU 5378-JDSU JDSU EPM JDS Uniphase photodiode epm 605 EDFA L-C band pin photodiode 2 GHz 1550 EPM635

    JDS Uniphase photodiode epm 605

    Abstract: JDS Uniphase photodiode epm 606LL InGaas PIN photodiode, 1550 sensitivity pin photodiode 1550 sensitivity epm 6xx series pin photodiode 1550 InGaas PIN photodiode, 1550 sensitivity application photodiode 1550 nm EPM605LL
    Text: Product Bulletin EPM 6xx Series C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes 605 606 613 650 The JDS Uniphase EPM 6xx Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in


    Original     		PDF

    JDSU EPM

    Abstract: 635-75 EPM635-75 JDS Uniphase photodiode epm 606LL-250 pin Photodiode 1550 nm dual photodiode EPM(R)-04-V L-Band 1200-1400 MHz photodiode 1550 nm
    Text: COMMUNICATIONS COMPONENTS C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes EPM 6xx Series Key Features • Electro-optical - Low back reflection - High responsivity in L-band at 1625 nm EPM 606 • Packaging - Single mode 900 µm fiber with or without a connector


    Original     		PDF 498-JDSU 5378-JDSU JDSU EPM 635-75 EPM635-75 JDS Uniphase photodiode epm 606LL-250 pin Photodiode 1550 nm dual photodiode EPM(R)-04-V L-Band 1200-1400 MHz photodiode 1550 nm

    InGaAs Epitaxx EPM

    Abstract: JDS Uniphase photodiode epm 605 606L EPM605LL JDS Uniphase photodiode epm EPITAXX 605 EPITAXX PIN Photodiode 4 Ghz 1550 nm pin photodiode 1550 sensitivity EPITAXX EPM
    Text: Product Bulletin EPM 6xx Series C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes 605 606 613 650 Preliminary Specifications C-Band Monitor L-Band Monitor Pass Band Monitor General Purpose Monitor Conditions unless noted : Temperature = 25°C, VR = 5V


    Original     		PDF

    diode code m10

    Abstract: avalanche photodiodes 1650nm APD 10ghz
    Text: Detectors for Fiber Optics: InGaAs Avalanche Photodiodes 80 µm InGaAs APDs PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate front-illuminated 80 micron diameter active area


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    InGaAs photodiode 1310 1550

    Abstract: InGaAs photodiodes 1310 1550 PD-1500 pin PD connector SC 1550 photodiode 1550 nm
    Text: Optoway PD-1500 * InGaAs PIN PD MODULES PD-1500 SERIES InGaAs PIN PHOTODIODE WITH RECEPTACLE * *


    Original     		PDF PD-1500 PD-1500 InGaAs photodiode 1310 1550 InGaAs photodiodes 1310 1550 pin PD connector SC 1550 photodiode 1550 nm

    Untitled

    Abstract: No abstract text available
    Text: PD LD Inc. PDINJ Series Analog InGaAsP PIN Photodiodes Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 75 micron diameter active area detector


    Original     		PDF 10meter

    PIN photodiode 1310

    Abstract: PD-1500 InGaas PIN photodiode, 1550
    Text: Optoway PD-1500 * InGaAs PIN PD MODULES PD-1500 SERIES InGaAs PIN PHOTODIODE WITH RECEPTACLE *


    Original     		PDF PD-1500 PD-1500 PIN photodiode 1310 InGaas PIN photodiode, 1550

    InGaAs Photodiode 1550nm

    Abstract: avalanche photodiode ingaas ghz InGaas APD photodiode, 1550 sensitivity Receptacle InGaAs APD photodiode 1550
    Text: PD LD PDINK Series InGaAs Avalanche Photodiodes Inc. InGaAs APD’s PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate 55 micron diameter active area APD’s that responds optimally to


    Original     		PDF 10meter InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz InGaas APD photodiode, 1550 sensitivity Receptacle InGaAs APD photodiode 1550

    analog PIN Photodiode 3GHz

    Abstract: Receptacle InGaAs Photodiode 1550nm PDINJ075FCCB-O-V-MM
    Text: PD Inc LD PDINJ Series Analog InGaAsP PIN Photodiodes Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 75 micron diameter active area detector


    Original     		PDF

    PD-1100

    Abstract: InGaAs photodiodes 1310 1550 InGaAs photodiode 1310 1550 InGaAs Photodiode 1550nm
    Text: Optoway PD-1100 * InGaAs PIN PHOTODIODES PD-1100 SERIES *


    Original     		PDF PD-1100 PD-1100 InGaAs photodiodes 1310 1550 InGaAs photodiode 1310 1550 InGaAs Photodiode 1550nm

    Infrared detectors

    Abstract: dark detector application ,uses and working
    Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Optoway PD-1350 * Mini-Size InGaAs PIN PD MODULE PD-1350 InGaAs PIN PHOTODIODE WITH SINGLE-MODE FIBER PIGTAIL


    Original     		PDF PD-1350 PD-1350

    inGaAs photodiode 1550

    Abstract: PD-1100 InGaAs Photodiode 1550nm
    Text: Optoway PD-1100 * InGaAs PIN PHOTODIODES PD-1100 SERIES *


    Original     		PDF PD-1100 PD-1100 inGaAs photodiode 1550 InGaAs Photodiode 1550nm

    VCSEL 1550 nm 1 Gbps

    Abstract: PY-CK11
    Text: Preliminary specification 1300/1550nm 1~4 Gbps InGaAs PIN Photodiodes Part number: PY-CK11 Characteristics T=300K Bandwidth Wavelength range Responsivity Dark current Reverse breakdown Capacitance Rise/Fall time (20%/80%) Conditions -3 V -3 V 1µA - 3 V, 1 MHz


    Original     		PDF 1300/1550nm PY-CK11 1310nm 460x250 PY-CK11 VCSEL 1550 nm 1 Gbps

    PD-1150-075

    Abstract: PD-1150-100 PD-1150-XXX PD-1155-075 PD-1155-XXX photodiode responsivity 1550nm 2 InGaAs Photodiode 1550nm
    Text: Optoway PD-1150-XXX * InGaAs PIN PHOTODIODES PD-1150-XXX PIN Photodiode with Mini-Size TO Package


    Original     		PDF PD-1150-XXX PD-1150-075 PD-1150-100 PD-1150-150 PD-1155-XXX PD-1150-075 PD-1150-100 PD-1150-XXX PD-1155-075 PD-1155-XXX photodiode responsivity 1550nm 2 InGaAs Photodiode 1550nm

    VCSEL die bonding

    Abstract: PY-CT11 InGaAs 0.85 um
    Text: Preliminary specification 1300/1550nm 10Gbps Gbps InGaAs PIN Photodiodes Part number: PY-CT11 Characteristics T=300K Bandwidth Wavelength range Responsivity Dark current Reverse breakdown Capacitance Rise/Fall time Conditions -3 V -3 V 1µA - 3 V, 1 MHz


    Original     		PDF 1300/1550nm 10Gbps PY-CT11 1310nm 460x250 PY-CT11 VCSEL die bonding InGaAs 0.85 um

    Untitled

    Abstract: No abstract text available
    Text: Bauelemente fur die LWL-Technik Semiconductor Devices for FiberOptic Systems Detektoren f ur Glasfaseranwendungen Detectors for glass fiber applications InGaAs/InP-PIN-Fotodioden InGaAs/lnP PIN photodiodes fur das 2. 1300 nm und 3. (1550 nm) DurchlaBfenster


    OCR Scan     		PDF 81314Z L51214Z 51414Z L81314Z L51414Z 62702P3033 51214Z

    fld3c2pj

    Abstract: FSX51 FLD5F6CX FMM362HE Fujitsu FLD5F6CX FLD148G3NL FRM5W231DR 382CG single frequency laser 1550 butterfly FMM381CG
    Text: LIGHTWAVE COMPONENTS & M ODULES LASER DIODE MODULES OPTICAL AND ELECTRICAL CHARACTERISTICS TL = 25°C or Tc = 25°C Part Number Ith (mA) Vf (V) CW CW (typ) If = Pf Pth (mW) (mW) CW (min.) CW dF=lth) CW at Pf VDR=5V - 0.2 9* en •> 3.0 (lp=600 mA) o o o o


    OCR Scan     		PDF 14-pin 4001EH 4002EH 4004EK 622Mb/s 4005EK fld3c2pj FSX51 FLD5F6CX FMM362HE Fujitsu FLD5F6CX FLD148G3NL FRM5W231DR 382CG single frequency laser 1550 butterfly FMM381CG