GaAs HEMTs X band
Abstract: X-band Gan Hemt 0.18um AlGaN/GaN HEMTs x-band mmic lna alcon X-band diode gp 421 LNA x-band
Text: High Linearity, Robust, AlGaN-GaN HEMTs for LNA & Receiver ICs P. Parikh, Y. Wu, M. Moore, P. Chavarkar, U. Mishra, Cree Lighting Company, 340 Storke Road, Goleta, CA 93117. R. Neidhard, L. Kehias, T. Jenkins, Air Force Research Laboratory, Sensors Directorate, WPAFB, OH 45433.
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Untitled
Abstract: No abstract text available
Text: Design & Manufacturing Excellence Military & Space Solutions Custom Integrated Circuits • Semiconductor device to system level knowledge • Validated device models • Extensive library of proven Analog, Digital & Mixed-Signal ICs and MMICs • Specialty products include: Synthesizers,
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AS9100
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Untitled
Abstract: No abstract text available
Text: R0605300 R0605300 Low Current 5MHz to 65 MHz Si REVERSE HYBRID Package: SOT-115J Product Description Features The R0605300 is a hybrid reverse amplifier. The part employs silicon die. It has extremely low distortion and superior return loss performance. The
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R0605300
OT-115J
R0605300
65MHz
DS090303
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Untitled
Abstract: No abstract text available
Text: R0605250 R0605250 5MHz to 65MHz Si Reverse Hybrid 5MHz to 65MHz Si REVERSE HYBRID Package: SOT-115J Product Description Features The R0605250 is a hybrid reverse amplifier. The part employs silicon die. It has extremely low distortion and superior return loss performance. The
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R0605250
65MHz
OT-115J
R0605250
DS090303
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Untitled
Abstract: No abstract text available
Text: R0605300 R0605300 Low Current 5MHz to 65 MHz Si REVERSE HYBRID Package: SOT-115J Product Description Features The R0605300 is a hybrid reverse amplifier. The part employs silicon die. It has extremely low distortion and superior return loss performance. The
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R0605300
OT-115J
R0605300
65MHz
65MHz
200mA
24VDC
DS090303
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SFT-9100
Abstract: InP transistor HEMT sft 43 Sft9100 SFT-9200B 9200B InP HEMT transistor at 50ghz inp hemt low noise amplifier InP HBT transistor mesfet low noise
Text: SFT-9200B SFT-9200B 50GHz Transimpedance Amplifier 50GHZ TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9200B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE
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SFT-9200B
50GHz
SFT-9200B
43Gb/s
40GbE,
100GbE
SFT-9100
InP transistor HEMT
sft 43
Sft9100
9200B
InP HEMT transistor at 50ghz
inp hemt low noise amplifier
InP HBT transistor
mesfet low noise
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reverse hybrid
Abstract: No abstract text available
Text: R0605250 R0605250 5MHz to 65MHz Si Reverse Hybrid 5MHz to 65MHz Si REVERSE HYBRID Package: SOT-115J Product Description Features The R0605250 is a hybrid reverse amplifier. The part employs silicon die. It has extremely low distortion and superior return loss performance. The
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R0605250
65MHz
OT-115J
65MHz
200mA
24VDC
R0605250
reverse hybrid
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RFVC1800
Abstract: RFVC-1800
Text: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The
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RFVC1800
RFVC1800
DS100527
RFVC1800PCK-410
RFVC1800S2
10pcs
RFVC-1800
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DIN45004B
Abstract: R2005300L
Text: R2005300L R2005300L Low Current 5MHz to 200MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R2005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.
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R2005300L
200MHz
OT-115J
R2005300L
DS101025
DIN45004B
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CXE-2022
Abstract: MARKING RFMD CXE-2022Z InP transistor HEMT optimum recievers 106-172 106172
Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage
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CXE-2022Z
50MHz
1000MHz
1000MHz
CXE-2022Z
CXE-2022
MARKING RFMD
InP transistor HEMT
optimum recievers
106-172
106172
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RFVC1800
Abstract: RFVC-1800
Text: RFVC1800 RFVC1800 Preliminary WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The
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RFVC1800
RFVC1800
DS090609
RFVC-1800
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RFVC1800
Abstract: RFVC-1800 DS100112
Text: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The
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RFVC1800
RFVC1800
DS100112
RFVC1800SB
RFVC1800PCK-410
10pcs
RFVC-1800
DS100112
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CXE2022SR
Abstract: CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z CXE-2022Z amplifier DFN 2x2 MARKING RFMD CXE2022
Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage
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CXE-2022Z
50MHz
1000MHz
1000MHz
CXE-2022Z
CXE2022SR
CXE2022PCK-410
CXE2022SB
CXE2022SQ
CXE2022TR7
CXE2022Z
amplifier DFN 2x2
MARKING RFMD
CXE2022
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60GHz transistor
Abstract: SFT-9400B InP transistor HEMT 60Ghz SFT9400B OC-768 98T2 InP HBT transistor low noise
Text: SFT-9400B SFT-9400B 60GHz Differential Input Transimpedance Amplifier 60GHz DIFFERENTIAL INPUT TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9400B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE
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SFT-9400B
60GHz
SFT-9400B
43Gb/s
40GbE,
100GbE
50GHz
60GHz transistor
InP transistor HEMT
SFT9400B
OC-768
98T2
InP HBT transistor low noise
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MARKING RFMD
Abstract: CXE2022Z CXE2022SR CXE-2022Z inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7
Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self
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CXE-2022Z
50MHz
1000MHz
1000MHz
CXE-2022Z
MARKING RFMD
CXE2022Z
CXE2022SR
inp hemt low noise amplifier
CXE-2022
CXE2022PCK-410
CXE2022SB
CXE2022SQ
CXE2022TR7
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Untitled
Abstract: No abstract text available
Text: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal
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SBF5089Z
SBF5089ZDC
500MHz,
OT-89
SBF5089Z
DS111011
SBF5089ZSQ
SBF5089ZSR
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rfvc1800sq
Abstract: No abstract text available
Text: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8GHz to 12GHz Package: 4mmx4mmx1.1mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0 to +13V Vtune for frequency control. The
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RFVC1800
12GHz
RFVC1800
-93dBc/Hz
100kHz
DS110829
RFVC1800S2
rfvc1800sq
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BF5Z
Abstract: SBF-5089 hemt Ee marking ee hemt SBF 5089 SBF5089 SBF-5089Z SBF50 sbf5089z marking code 827 sot89
Text: SBF-5089 Z SBF-5089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF-5089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar
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SBF-5089
500MHz,
OT-89
EDS-103413
SBF5089"
SBF5089Z"
BF5Z
hemt Ee
marking ee hemt
SBF 5089
SBF5089
SBF-5089Z
SBF50
sbf5089z
marking code 827 sot89
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Untitled
Abstract: No abstract text available
Text: SBF-5089 Z SBF-5089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBF-5089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar
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SBF-5089
500MHz,
OT-89
EDS-103413
SBF5089â
SBF5089Zâ
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SUF-5033
Abstract: suf 5033
Text: SUF-5033 SUF-5033Low Noise, High Gain SiGe HBT 0.1 GHZ TO 4.0 GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1 GHz to 4.0 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5 V supply. It
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SUF-5033
SUF-5033Low
16-Pin,
SUF-5033
DS090605
16-Pin
SUF-5033PCBA-410
suf 5033
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suf 5033
Abstract: No abstract text available
Text: SUF-5033 SUF-5033Low Noise, High Gain SiGe HBT 0.1 GHZ TO 4.0 GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1 GHz to 4.0 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5 V supply. It
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SUF-5033Low
SUF-5033
16-Pin,
SUF-5033
DS110718
SUF-5033SB
SUF-5033SQ
SUF-5033SR
SUF-5033TR7
suf 5033
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SBF-5089Z
Abstract: InP transistor HEMT InP HBT transistor low noise
Text: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal
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SBF5089ZDC
500MHz,
SBF5089Z
OT-89
SBF5089Z
DS111011
SBF5089ZSQ
SBF-5089Z
InP transistor HEMT
InP HBT transistor low noise
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SUF-8533SR
Abstract: pHEMT operating junction temperature DS110718
Text: SUF-8533 SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier
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SUF-8533DC
SUF-8533
16-Pin,
SUF-8533
DS110718
SUF-8533SB
SUF-8533SQ
SUF-8533SR
SUF-8533TR7
pHEMT operating junction temperature
DS110718
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SUF-8533
Abstract: gp bjt
Text: SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier SUF-8533 Preliminary DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier
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SUF-8533DC
SUF-8533
16-Pin,
SUF-8533
EDS-106168
SUF-8533PCBA-410
gp bjt
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