if6 hall
Abstract: Brushless if6 Hall IC Switch IF5 if5 hall hall element NHE520 NHE524 550 hall "Brushless if6 if6 sensor
Text: InSb Hall Element Product Information Model: Description: NHE524 Hall Element NHE520 1. Applications * Brushless DC motors CD-ROM drive, floppy disk drive, other small precision motors etc. , Noncontacting sensors (limit switch, flux leakage detection, rotation speed detection and position
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NHE524
NHE520
if6 hall
Brushless if6
Hall IC Switch IF5
if5 hall
hall element
NHE520
NHE524
550 hall
"Brushless if6
if6 sensor
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if6 hall
Abstract: if5 hall Brushless if6 hall NHE520 NHE529 HALL ELEMENT NHE-520 if6 sensor hall magnetic
Text: InSb Hall Element Product Information Model: Description: NHE529 Hall Element NHE520 1. Applications * Brushless DC motors CD-ROM drive, floppy disk drive, other small precision motors etc. , Noncontacting sensors (limit switch, flux leakage detection, rotation speed detection and position
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NHE529
NHE520
if6 hall
if5 hall
Brushless if6
hall
NHE520
NHE529
HALL ELEMENT
NHE-520
if6 sensor
hall magnetic
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Untitled
Abstract: No abstract text available
Text: DRV411 www.ti.com SBOS693A – AUGUST 2013 – REVISED AUGUST 2013 Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors Check for Samples: DRV411 FEATURES DESCRIPTION • The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor
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DRV411
SBOS693A
DRV411
250-mA
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Untitled
Abstract: No abstract text available
Text: DRV411 www.ti.com SBOS693B – AUGUST 2013 – REVISED DECEMBER 2013 Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors Check for Samples: DRV411 FEATURES DESCRIPTION • The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor
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DRV411
SBOS693B
DRV411
250-mA
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR InSb photovoltaic detector P5968/P4247 series High-speed response, low-noise photovoltaic detector P5968/P4247 series are photovoltaic detectors having high sensitivity in the so-called atmospheric window at 3 to 5 µm. Custom devices are also
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P5968/P4247
P7751-01
P5968-060.
P7751-02
P5968-200.
SE-171
KIRD1039E06
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Untitled
Abstract: No abstract text available
Text: InSb photoconductive detectors P6606 series Thermoelectrically cooled detectors capable of long-term measurements Features Applications Thermoelectric cooling ensures high speed and high sensitivity up to 6.5 m. Environment measurements gas analysis, etc.
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P6606
A3179-01
A3179-04
C1103-05
C1103-07
C5185
P4631-03
P660e:
SE-171
KIRD1026E10
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Untitled
Abstract: No abstract text available
Text: Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02
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C4159/C5185
C3757-02
A4372-02
C4159
C5185
E3620A,
E3630A
SE-171
KIRD1011E10
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InSb spectral response
Abstract: No abstract text available
Text: InSb photovoltaic detectors P5968/P4247 series High-speed response, low-noise photovoltaic detectors The P5968/P4247 series are photovoltaic detectors having high sensitivity in the so-called atmospheric window at 3 to 5 m. Custom devices are also available to meet your special request.
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P5968/P4247
P7751-01
P5968-060.
P7751-02
P5968-200.
C4159-01
SE-171
KIRD1039E07
InSb spectral response
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR InSb photoconductive detector P6606 series Thermoelectrically cooled detectors capable of long-term measurements Features Applications l Thermoelectric cooling ensures high speed and high l Environment measurements gas analysis, etc. sensitivity up to 6.5 µm.
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P6606
A3179
A3179-01
A3179-04
C1103-05
C1103-07
SE-171
KIRD1026E06
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HgCdTe
Abstract: infrared detector InSb spectral response L5736 L5914 IR Detectors L5930 photoconductive InSb Infrared Preamplifiers HGCDTE detector
Text: L 5 9 0 0 SERIES INFR ARED DETECT ORS INFRARED DETECTORS The L5900 Series of Infrared Detectors are part of a complete line of tunable diode laser sources and accessories offered by Laser Analytics. The L5900 Series includes InSb and HgCdTe detectors. Standard detectors allow response between 1 and 20 microns. Custom detectors are also available
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L5900
10KHZ
0x1011
0x1010
0x1090
2x1090
HgCdTe
infrared detector
InSb spectral response
L5736
L5914
IR Detectors
L5930
photoconductive InSb
Infrared Preamplifiers
HGCDTE detector
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EN 60127-2
Abstract: No abstract text available
Text: FUSES / SICHERUNGEN SURGE TOLERANT Miniature fuse-links Type SSU 5 x 20 G-Sicherungseinsätze Typ SSU 5 x 20 especially for telecom applications insbesondere für Telecom-Anwendungen 5 x 20 mm ts 1000 100 10 75 1 100 Pre-arcing time in seconds ts Schmelzzeit in Sekunden ts
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20/UL
1459/GR
EN 60127-2
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KS113
Abstract: THS126 HG106C ksy13 LT140A THS124, Toshiba THS117 HW-105 THS119 SOT143
Text: Cross Reference Linear Analog Hall Elements Vendor Infineon Asahi Sharp Toshiba Part No Type Size mm Nominal supply (mA) Hall voltage @0.1T (mV) 2,9 1,4 1,1 5 120 Package KSY 13 GaAs KSY 13-2 KS113 HW101A InSb HW105C HZ302H InAs HZ106/302C SOT143 SOT143*
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KS113
HW101A
HW105C
HZ302H
HZ106/302C
OT143
OT143*
HG106C
LT120A/SA
KS113
THS126
HG106C
ksy13
LT140A
THS124, Toshiba
THS117
HW-105
THS119
SOT143
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EW-414
Abstract: No abstract text available
Text: Hybrid Hall Effect ICs EW-series EW-414 Shipped in packet-tape reel 5000pcs/Reel EW-414 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Bipolar Hall Supply Voltage Effect Latch 4.5~26.4Ｖ Hall Element
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EW-414
5000pcs/Reel)
EW-414
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Untitled
Abstract: No abstract text available
Text: InSb Semiconductor Magnetoresistive Element MS-0040 MS-0040 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.4. Shipped in tray 225 pcs per pack
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MS-0040
MS-0040
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ecg semiconductors master replacement guide
Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei
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Abstract: No abstract text available
Text: DRV411 www.ti.com SBOS693 – AUGUST 2013 Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors Check for Samples: DRV411 FEATURES DESCRIPTION • The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor
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DRV411
SBOS693
DRV411
250-mA
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EW-560
Abstract: No abstract text available
Text: Hybrid Hall Effect ICs EW-series EW-560 Shipped in bulk 500pcs/Bag EW-560 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Unipolar Hall Supply Voltage Effect Switch 4.5~18Ｖ Hall Element Continuous
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EW-560
500pcs/Bag)
EW-560
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EW-432
Abstract: Latch UFN 432 S 261 Hall UFN 432 we i
Text: Hybrid Hall Effect ICs EW-series EW-432 Shipped in packet-tape reel 5000pcs/Reel EW-432 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Bipolar Hall Supply Voltage Effect Latch 2.2~18Ｖ Hall Element
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EW-432
5000pcs/Reel)
EW-432
Latch
UFN 432
S 261 Hall
UFN 432 we i
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410B
Abstract: EW410B
Text: Hybrid Hall Effect ICs EW-series EW-410B Shipped in packet-tape reel 5000pcs/Reel EW-410B is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Bipolar Hall Supply Voltage Effect Latch 3~26.4Ｖ Hall Element
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EW-410B
5000pcs/Reel)
EW-410B
410B
EW410B
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Untitled
Abstract: No abstract text available
Text: Weitergabe sowie Vervielfaeltigung dieser Unterlage, Verwertung und Mitteilung ihres Inhalts nichtgestattet, soweifnicht ausdruecRlich zugestanaen. Zuwiderhandlungen verpflichten zu Schadenersatz. Alle Rechte vorbehalten, insbesondere fuer denTall der Patenterteilung Oder GM-Eintragung.
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magnetoresistor
Abstract: No abstract text available
Text: SÌE D • flaBSbOS DOlbS'te 1 MSIEfi M agnetoresistor FP 30 D 250 E - SIEMENS AKTIEN6ESELLSCHAF Features 0 ,5 î0 .i -Active area • InSb/NiSb semiconductor CuL 0 0 .0 8 • Flux concentrating iron substrate m • High sensitivity r m
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fl235b05
magnetoresistor
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InSb spectral response
Abstract: P5172 detector inas
Text: In As, InSb Photovoltaic Detectors Photovoltaic Detectors with High-speed Response and Low Noise InAs detectors cover a wavelength range equivalent to that o f PbS cells, and InSb detectors cover a range equivalent to PbSe cells. How ever, InAs and InSb detectors have higher response speed and lower
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SV110
Abstract: Q64021 TESLA 110 S110S hall TESLA 3D Hall device
Text: SV110 Hall signal probe w ith vapour-deposited layer S V 1 1 0 is a high sensitivity, high internal resistance Hall device for application in control and regulating circuits semiconductor material InSb — vapour-deposited layer . Terminals: Hall voltage red; control current green; wire length 100 mm.
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SV110
SV110
-S110-S2
Q64021
-S110-S3
V20/B
AV20/V20
TESLA 110
S110S
hall
TESLA
3D Hall device
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Untitled
Abstract: No abstract text available
Text: Weilergabe sowie Vervielffiltigung dieses Dokuments. Verwertung und Mitteilung seines Inhalts gem §18 UWG verboten. soweit nicht ausdrucklich gestattet. Zuwiderhandlungen verpflichten zu Schadenersatz §19 UWG . Alle Rechte vorbehalten. insbesondere das Recht. Patent-. Gebrauchsmuster- Oder Geschmacksmusteranmeldungen durchzufuhren.
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BA-12S2NHCPA00
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