lm 7085
Abstract: lm 7085 circuit diagram AP-316 AR 5414 intel 28F256 intel 28F256 flash epl* Thermal printer 2147H SRAM 80C186 programming 5C032
Text: AP-316 APPLICATION NOTE Using Flash Memory for In-System Reprogrammable Nonvolatile Storage SAUL ZALES DALE ELBERT APPLICATIONS ENGINEERING INTEL CORPORATION January 1996 Order Number 292046-004 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in
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AP-316
LA19d
LA18d
LA17d
LA16d
lm 7085
lm 7085 circuit diagram
AP-316
AR 5414
intel 28F256
intel 28F256 flash
epl* Thermal printer
2147H SRAM
80C186 programming
5C032
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PDF
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4000 series CMOS Logic ICs
Abstract: 74HCT-series 74HCT IC family spec AP-252 hmos mosfet disadvantages of intel 8051 8051s 74c SERIES cmos logic data pressure measurement with 8051 AP252
Text: AP-252 APPLICATION NOTE Designing With The 80C51BH TOM WILLIAMSON MCO APPLICATIONS ENGINEER March 1985 Order Number 270068-002 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in
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AP-252
80C51BH
AP-125
2147H
AP-74
4000 series CMOS Logic ICs
74HCT-series
74HCT IC family spec
AP-252
hmos mosfet
disadvantages of intel 8051
8051s
74c SERIES cmos logic data
pressure measurement with 8051
AP252
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PDF
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Intel AP-401
Abstract: AP-316 29204* intel lm2391
Text: m u APPLICATION NOTE AP-316 October 1990 Using Flash Memory for In-System Reprogrammable Nonvolatile Storage SAUL ZALES DALE ELBERT APPLICATIONS ENGINEERING INTEL CORPORATION Order Number: 292046-003 6-203 6 USING FLASH MEMORY FOR IN-SYSTEM REPROGRAMMABLE
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AP-316
LA19d,
LA18d,
LA17d,
LA19d
LA18d
LA17d
LA16d
Intel AP-401
AP-316
29204* intel
lm2391
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1k x 4
Abstract: 2148H LD2114AL-4 ld2114 QP2114 2125AL-2 LD2114AL enhance 168 2125AL qD2125AL
Text: RAM FAMILY EXPRESS • Standard Temperature Range ■ 168 ±8 Hour Burn-In Available ■ Extended Temperature Range - 4 0 t,C - + 85°C Available ■ Inspected to 0.1% AQL The Intel EXPRESS RAM family is a series of random-access memories which have received additional
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2147H
1k x 4
2148H
LD2114AL-4
ld2114
QP2114
2125AL-2
LD2114AL
enhance 168
2125AL
qD2125AL
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PDF
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2118 intel
Abstract: 2114A 2114 1k x 4 2114 1k x 16 RAM intel 2118 FAMILY 2114AL-4 2148H 2114A-4 qD2125AL ram 2114
Text: i n y RAM FAMILY EXPRESS • Standard Temperature Range ■ Extended Temperature Range ~40°C-+85°C Available ■ 168 ±8 Hour Burn-in Available ■ Inspected to, 0.1% AQL The Intel EXPRESS RAM family is a series of random-access memories which have received additional
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AFW021S3A
2147M
2147H
2118 intel
2114A
2114 1k x 4
2114 1k x 16 RAM
intel 2118 FAMILY
2114AL-4
2148H
2114A-4
qD2125AL
ram 2114
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Untitled
Abstract: No abstract text available
Text: INTEL CORP I n t e l * MEMORY/LOGIC EOE D 4fl5bl7b 0Dbla7ci3' 3 27512 512K (64K X 8) PRODUCTION AND UV ERASABLE PROM • ■ ■ ■ Software Carrier Capability 170 ns Maximum Access Time Two-Line Control Intgllgent Identifier Mode — Automated Programming Operations
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28-Pin
288-bit
-20QV05
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intel 27c512 eprom
Abstract: 27C512-200V10 i27C512 d27c512 27C512-120V10 I27C256 intel 27c512 29022 27C512-1 27C512-2
Text: INTEL CORP MEMORY/LOGIC 50E D • 4fl2hl7b GObböOH *4 ■ In te l' T -V L -lS -tS 27C512 *T“-V6-/3 -29 512K (64K x 8) CHMOS PRODUCTION AND UV ERASABLE PROMS ■ Software Carrier Capability ■ 120 ns Access Time ■ Two-Line Control ■ Inteligent identifier Mode
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27C512
27C512
288-bit
T-46-13-29
intel 27c512 eprom
27C512-200V10
i27C512
d27c512
27C512-120V10
I27C256
intel 27c512
29022
27C512-1
27C512-2
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PDF
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P80A49H
Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Text: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.
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RMX/80,
P80A49H
8035HL
F1L 250 V fuse
BPK-70
interfacing 8275 crt controller with 8086
i8282
hall marking code A04
Transistor AF 138
DK55
82720 intel
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PDF
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271049
Abstract: No abstract text available
Text: INTEL ir r t e l CORP UP/PRFHLS 1 2E D I MÖ2L175 0Q70Tt.l 4 ß lM G ä R M ir O 1' U \3 -3 fl M27011 PAGE-ADDRESSED 1M 8 x 16K x 8 EPROM MILITARY • Military Temperature Range —55°C to + 125°C (Tc) Automatic Page Clear — Resets to Page 0 on Power-Up
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2L175
0Q70Tt
M27011
28-Pin
M27011
271049
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PDF
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2147 intel
Abstract: Intel 2147H 2147-6 2141L-3 2141L-5 2147H 2147H-1 2147H-2 2147H-3 2147H-4
Text: 14 4 K • ■ ■ n X ïâfèïïïs m « it ^ CC TAAC max <ns) A TCAC max ns) TOE max (ns) "/ TOH min (ns) nMOS fTOD max (ns) > S t a t i c 7' TWP min (ns) RAM ( 4 0 9 6 X 1 ) tí TBS min (ns) « TDH Ss) T*D rain (ns) TWR max (ns) V D D or V C C (V) 18 P I N
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4096X1)
Am90440
Am9044D
Am9044E
C2147A
C2147A-3
C2147AL
C2147AL-3
C2147II-2
2147 intel
Intel 2147H
2147-6
2141L-3
2141L-5
2147H
2147H-1
2147H-2
2147H-3
2147H-4
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PDF
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intel 2147
Abstract: No abstract text available
Text: intei* 2147H HIGH SPEED 4096 x 1 BIT STATIC RAM 2147H-1 2147H-2 2147H-3 35 45 55 70 180 180 180 160 30 30 30 20 Max. Access Time ns Max. Active Current (mA) Max. Standby Current (mA) 2147H Direct Performance Upgrade for 2147 Pinout, Function, and Power Compatible to Industry Standard 2147
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2147H-1
2147H-2
2147H-3
2147H
18-Pin
intel 2147
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PDF
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Untitled
Abstract: No abstract text available
Text: infer M27128A Advanced 128K 16x8 UV Erasable PROM M ilitary m lnteligent Programming Algorithm • Fas! Access Times: — M27128A-20 200 ns — M27128A-30 300 ns ■ Low Power — 140 mA Maximum Active — 50 mA Maximum Standby ■ Two Line Control — Fastest EPROM Programming
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M27128A
M27128A-20
M27128A-30
M2764A
M27256
M27128A
072-bit
M27128
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M27128
Abstract: M27128A M27128A-20 M27128A-30 M2716 M27256 M2732A M2764A AP-72 M27MA
Text: M27128A Advanced 128K 16x8 UV Erasable PROM Military m lnteligent P r o g r a m m i n g Algorithm — Fastest EPROM Programming • lnteiigent Identifier™ Mode — Automated Programming Operations ■ Compatible with M2764A and M27256 ■ Military Temperature Range
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M27128A
M2764A
M27256
M27128A
072-bit
M27128
M27128A,
M27128A-20
M27128A-30
M2716
M27256
M2732A
AP-72
M27MA
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PDF
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27512
Abstract: 2732a jl eprom intel 27512 eprom 27512 eprom 27512-170V05 27512-200V10 intel 2716 eprom 27C84 iAPX 286 Intel 2147H
Text: intei 27512 512K 64K x 8 PRODUCTION AND UV ERASABLE PROM Software Carrier Capability Low Power — 125 mA max. Active — 40 mA max. Standby 170 ns Maximum Access Time Two-Line Control inteligent Identifier Mode — Automated Programming Operations indigent Programming™ Algorithm
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28-Pin
288-bit
-200V05
27512
2732a jl eprom
intel 27512 eprom
27512 eprom
27512-170V05
27512-200V10
intel 2716 eprom
27C84
iAPX 286
Intel 2147H
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PDF
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m27128 eprom
Abstract: M27128 M27128A M27128A-20 M27128A-30 M2716 M27256 M2732A M2764A M27128AS
Text: infer M27128A Advanced 128K 1 6 x 8 UV Erasable PROM Military • lnteligent P r o g r a m m i n g Algorithm — Fastest EPROM Programming ■ lnteiigent Identifier™ Mode — Automated Programming Operations ■ Compatible with M2764A and M27256
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M27128A
M2764A
M27256
M27128A
072-bit
M27128
M27128A,
m27128 eprom
M27128A-20
M27128A-30
M2716
M27256
M2732A
M27128AS
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PDF
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k5m capacitor
Abstract: 27C128 INTEL eprom 27c64 PROGRAMMER CIRCUIT ic 27c64 intel 27C011 27CS12 2732A TVR 07 spec 27C011 27C128
Text: in te i 27C513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ 170 ns Access Time ■ Two Line Control ■ Low Power — 30 mA max. Active — 100 f i A max. Standby
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27C513
7128A
28-Pin
27C513
288-bit
27CS13
k5m capacitor
27C128 INTEL
eprom 27c64 PROGRAMMER CIRCUIT
ic 27c64
intel 27C011
27CS12
2732A
TVR 07 spec
27C011
27C128
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PDF
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intel 27C011
Abstract: 27C128 INTEL 27C513 27C128 st make 27C011 27C128 27C256 27C64 27CS12 87C64
Text: in te i 27C513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ Software Carrier Capacity ■ Automatic Page Clear — Resets to Page 0 on Power Up and
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27C513
7128A
28-Pin
27C513
288-bit
27CS13
intel 27C011
27C128 INTEL
27C128 st make
27C011
27C128
27C256
27C64
27CS12
87C64
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PDF
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7258 "drop-in replacement"
Abstract: EPROM 27011 27011 27128 27011-200V10 27C128 INTEL 27C128 27C513 27C64 87C64
Text: in te i 27011 PAGE-ADDRESSED 1M 8 x 16K x 8 UV ERASABLE PROM • Automatic Page Clear — Resets to Page 0 on Power-Up and On Demand with RST Signal^) ■ Paged Organization — Reduced Physical Address Requirement ■ Compatible with 28-Pin JEDEC EPROMs
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28-Pin
576-bit
27011-200V10
7258 "drop-in replacement"
EPROM 27011
27011
27128
27C128 INTEL
27C128
27C513
27C64
87C64
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PDF
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27513
Abstract: No abstract text available
Text: 27513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ Software Carrier Capacity ■ Automatic Page Clear — Resets to Page 0 on Power Up and On Demand with RST SignalO)
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7128A
28-Pin
288-bit
27513
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PDF
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27C513
Abstract: intel 27C011 eprom 27c64 PROGRAMMER CIRCUIT INTEL 27128A EPROM EPROM 27011
Text: 27C513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ 170 ns Access Time ■ Two Line Control ■ Low Power — 30 mA max. Active — 100 fxA max. Standby
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27C513
7128A
28-Pin
288-bit
to100%
intel 27C011
eprom 27c64 PROGRAMMER CIRCUIT
INTEL 27128A EPROM
EPROM 27011
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PDF
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27C128 INTEL
Abstract: 27513-170V05 27513-170V10 LD27513 TD27513 intel 27c256
Text: 27513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ Software Carrier Capacity ■ Automatic Page Clear — Resets to Page 0 on Power Up and On Demand with RST SignalO)
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7128A
-28-Pin
288-bit
27C128 INTEL
27513-170V05
27513-170V10
LD27513
TD27513
intel 27c256
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PDF
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27s13
Abstract: 271 Ceramic Disc Capacitors eprom 27c64 PROGRAMMER CIRCUIT 27C128 INTEL intel 2732 eprom 27C128 27C256 27C512 27C64 87C64
Text: 27513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ Software Carrier Capacity ■ Automatic Page Clear — Resets to Page 0 on Power Up and On Demand with RST SignaK1)
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7128A
28-Pin
288-bit
27s13
271 Ceramic Disc Capacitors
eprom 27c64 PROGRAMMER CIRCUIT
27C128 INTEL
intel 2732 eprom
27C128
27C256
27C512
27C64
87C64
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PDF
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Untitled
Abstract: No abstract text available
Text: p w io M M o n r in t e r M27C512 512K 64K x 8 UV ERASABLE PROM Military • Fast Access Time — M27C512-15 150 ns — M27C512-20 200 ns — M27C512-25 250 ns ■ Two-Line Control ■ CMOS and TTL Compatible ■ Low Power — 30 mA max. Active — 1.0 mA max. Standby
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M27C512
M27C512-15
M27C512-20
M27C512-25
M27C512
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PDF
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2147 intel
Abstract: No abstract text available
Text: in te i 2147H HIGH SPEED 4096 x 1 BIT STATIC RAM 2147H-1 Max. Access Time ns Max. Active Current (mA) Max. Standby Current (mA) 2147H-2 2147H-3 2147H 2147HL 35 45 55 70 70 180 180 180 160 140 30 30 30 20 10 Pinout, Function, and Power Com patible to Industry Standard 2147
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2147H
2147H-1
2147H-2
2147H-3
2147HL
18-Pin
4096-bit
2147H,
2147 intel
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PDF
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