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    INTEL DYNAMIC RAM MEMORY Search Results

    INTEL DYNAMIC RAM MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy

    INTEL DYNAMIC RAM MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA2180

    Abstract: No abstract text available
    Text: SDRAM MODULE KMM377S2858AT2 KMM377S2858AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT2 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The


    Original     		PDF KMM377S2858AT2 KMM377S2858AT2 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin MA2180

    samsung capacitance Manufacturing location

    Abstract: 128Mx72 SDRAM Intel 1.2 ver Base
    Text: PC100 Registered DIMM M377S2858DT3 M377S2858DT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2858DT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2858DT3 consists of eighteen CMOS Stacked


    Original     		PDF PC100 M377S2858DT3 M377S2858DT3 128Mx72 128Mx4, 128Mx4 400mil 18-bits samsung capacitance Manufacturing location 128Mx72 SDRAM Intel 1.2 ver Base

    M377S2858CT3-C1H

    Abstract: M377S2858CT3-C1L
    Text: PC100 Registered DIMM M377S2858CT3 M377S2858CT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2858CT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2858CT3 consists of eighteen CMOS Stacked


    Original     		PDF PC100 M377S2858CT3 M377S2858CT3 128Mx72 128Mx4, 128Mx4 400mil 18-bits M377S2858CT3-C1H M377S2858CT3-C1L

    b1a12

    Abstract: M377S2858BT3-C1H
    Text: PC100 Registered DIMM M377S2858BT3 M377S2858BT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2858BT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2858BT3 consists of eighteen CMOS Stacked


    Original     		PDF PC100 M377S2858BT3 M377S2858BT3 128Mx72 128Mx4, 128Mx4 400mil 18-bits b1a12 M377S2858BT3-C1H

    KMM377S1620CTH-G8

    Abstract: KMM377S1620CTH-GH KMM377S1620CTH-GL 1818-7329
    Text: SDRAM MODULE KMM377S1620CTH KMM377S1620CTH SDRAM DIMM Intel 1.0 ver. Base 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S1620CTH is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S1620CTH consists of eighteen CMOS 16Mx4


    Original     		PDF KMM377S1620CTH KMM377S1620CTH 16Mx72 16Mx4, 16Mx4 400mil 18-bits 24-pin KMM377S1620CTH-G8 KMM377S1620CTH-GH KMM377S1620CTH-GL 1818-7329

    Untitled

    Abstract: No abstract text available
    Text: PC100 Registered DIMM M377S2858AT3 M377S2858AT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2858AT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2858AT3 consists of eighteen CMOS Stacked


    Original     		PDF M377S2858AT3 M377S2858AT3 PC100 128Mx72 128Mx4, 128Mx4 400mil 18-bits

    M377S5658MT3-C1H

    Abstract: M377S5658MT3 M377S5658MT3-C1L samsung capacitance Manufacturing location b1a12
    Text: PC100 Registered DIMM M377S5658MT3 M377S5658MT3 SDRAM DIMM Intel 1.2 ver Base 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S5658MT3 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S5658MT3 consists of eighteen CMOS Stacked


    Original     		PDF PC100 M377S5658MT3 M377S5658MT3 256Mx72 256Mx4, 256Mx4 400mil 18-bits M377S5658MT3-C1H M377S5658MT3-C1L samsung capacitance Manufacturing location b1a12

    KMM377S1620BT1-GH

    Abstract: KMM377S1620BT1-GL
    Text: Preliminary KMM377S1620BT1 SDRAM MODULE KMM377S1620BT1 SDRAM DIMM Intel 1.0 ver. Base 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S1620BT1 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S1620BT1 consists of eighteen CMOS 16Mx4


    Original     		PDF KMM377S1620BT1 KMM377S1620BT1 16Mx72 16Mx4, 16Mx4 400mil 18-bits 24-pin KMM377S1620BT1-GH KMM377S1620BT1-GL

    Untitled

    Abstract: No abstract text available
    Text: PC100 Registered DIMM M377S2858CT3 M377S2858CT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2858CT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2858CT3 consists of eighteen CMOS Stacked


    Original     		PDF PC100 M377S2858CT3 M377S2858CT3 128Mx72 128Mx4, 128Mx4 400mil 18-bits

    CDC2509

    Abstract: M377S3320MT3-C1H M377S3320MT3-C1L MA2180
    Text: M377S3320MT3 PC100 Registered DIMM M377S3320MT3 SDRAM DIMM Intel 1.2 ver Base 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S3320MT3 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S3320MT3 consists of eighteen CMOS 32Mx4 bit


    Original     		PDF M377S3320MT3 PC100 M377S3320MT3 32Mx72 32Mx4, 32Mx4 400mil 18bits CDC2509 M377S3320MT3-C1H M377S3320MT3-C1L MA2180

    CDC2509

    Abstract: M377S3323MT0-C1H M377S3323MT0-C1L
    Text: M377S3323MT0 PC100 Registered DIMM M377S3323MT0 SDRAM DIMM Intel 1.2 ver. Base 32Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S3323MT0 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S3323MT0 consists of eighteen CMOS 16Mx8 bit


    Original     		PDF M377S3323MT0 PC100 M377S3323MT0 32Mx72 16Mx8, 16Mx8 400mil 18bits CDC2509 M377S3323MT0-C1H M377S3323MT0-C1L

    M377S5658MT3

    Abstract: M377S5658MT3-C1H M377S5658MT3-C1L 256Mx4
    Text: Preliminary PC100 Registered DIMM M377S5658MT3 M377S5658MT3 SDRAM DIMM Intel 1.2 ver Base 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S5658MT3 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S5658MT3 consists of eighteen CMOS Stacked


    Original     		PDF PC100 M377S5658MT3 M377S5658MT3 256Mx72 256Mx4, 256Mx4 400mil 18-bits M377S5658MT3-C1H M377S5658MT3-C1L

    KMM377S6450AT2-GH

    Abstract: CDC2509
    Text: SDRAM MODULE KMM377S6450AT2 KMM377S6450AT2 SDRAM DIMM Intel 1.1 ver. Base 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S6450AT2 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S6450AT2 consists of eighteen CMOS 64Mx4


    Original     		PDF KMM377S6450AT2 KMM377S6450AT2 64Mx72 64Mx4, 64Mx4 400mil 18-bits 24-pin KMM377S6450AT2-GH CDC2509

    Untitled

    Abstract: No abstract text available
    Text: I N TE L CORP MEMORY/LOGIC 12E D~j| MÖ5bl?b GObimT t I T-HL-23'öS inteT PRELIMINARY Edition 3.0 21010 1/048/57 6 X 1 BIT DYNAMIC RAM WITH PAGE MODE FEATURES GENERAL DESCRIPTION . Performance Range: Intel 21010 is a CMOS high speed 1,048,576 x 1 dynamic RAM optimized


    OCR Scan     		PDF 120nS 160nS L--12 M65bl7fc. 18-LEAD 20-LEAD

    2164 dynamic ram

    Abstract: 8203 diagram of IC 8203 pin diagram of intel IC 8203 pin diagram of 18 pin IC 8203 pin configuration IC 8203 ic intel 8203 pin diagram of RAM IC 8203 8202a intel microprocessor pin diagram pin diagram of 8203
    Text: inteT 8203 64K DYNAMIC RAM CONTROLLER • Provides All Signals Necessary to Control 64K 2164 and 16K (2117,2118) Dynamic Memories ■ Fully Compatible with Intel 8080A , 8085A, iAPX 88, and iAPX 86 Family Micro­ processors ■ Directly Addresses and Drives Up to 64


    OCR Scan     		PDF AFN-02144B 2164 dynamic ram 8203 diagram of IC 8203 pin diagram of intel IC 8203 pin diagram of 18 pin IC 8203 pin configuration IC 8203 ic intel 8203 pin diagram of RAM IC 8203 8202a intel microprocessor pin diagram pin diagram of 8203

    intel 8203

    Abstract: pin diagram of IC 8203 pin diagram of intel IC 8203 8202a intel microprocessor pin diagram 8282 ADDRESS LATCH diagram of IC 8203 D 8203 8202A pin configuration IC 8203 ic IAPX88
    Text: in t !* 8203 64K DYNAMIC RAM CONTROLLER • Provides All Signals Necessary to Control 64K and 16K Dynamic Memories ■ Directly Addresses and Drives Up to 64 Devices Without External Drivers ■ Fully Compatible with Intel 8080A, 8085A, IAPX88, and iAPX 86 Family


    OCR Scan     		PDF IAPX88, intel 8203 pin diagram of IC 8203 pin diagram of intel IC 8203 8202a intel microprocessor pin diagram 8282 ADDRESS LATCH diagram of IC 8203 D 8203 8202A pin configuration IC 8203 ic IAPX88

    ta 8207 k

    Abstract: 2118 ram difference between intel 80186 and intel 80286 pro diagram of interface 64K RAM with 8086 MP difference between intel 8086 and intel 80186 pro 8294A 8207 82072 iapx 286 B0286
    Text: in t e f 8207 ADVANCED DYNAMIC RAM CONTROLLER Provides All Signals Necessary to Control 16K 2118 , 64K (2164A) and 256K Dynamic RAMs • Supports Intel IAPX 86, 88, 186, 188, and 286 Microprocessors Directly Addresses and Drives up to 2 Megabytes without External Drivers


    OCR Scan     		PDF 11TCLCL-- 2TCLCL-T34 3TCLCL--T26 12TCLCL 14TCLCU 14TCLCL 11TCLCL-T26 ta 8207 k 2118 ram difference between intel 80186 and intel 80286 pro diagram of interface 64K RAM with 8086 MP difference between intel 8086 and intel 80186 pro 8294A 8207 82072 iapx 286 B0286

    IS3938

    Abstract: No abstract text available
    Text: in te i 8202A DYNAMIC RAM CONTROLLER • Provides All Signals Necessary to Con­ trol 2117, or 2118 Dynamic Memories ■ Provides Transparent Refresh Capability ■ Directly Addresses and Drives Up to 64K Bytes Without External Drivers ■ Fully Com patible with Intel 8080A ,


    OCR Scan     		PDF 202A-1 202A-3 -01838A IS3938

    diagram of IC 8203

    Abstract: 2164 dynamic ram intel 8203 memory ic 2118
    Text: intei 8203 64K DYNAMIC RAM CONTROLLER • Provides All Signals Necessary to Control 64K 2164 and 16K (2117, 2118) Dynamic Memories ■ Fully Com patible with Intel 8080A, 8085A, iAPX 88, and iAPX 86 Family Micro­ processors ■ Directly Addresses and Drives Up to 64


    OCR Scan     		PDF AFW-02144B diagram of IC 8203 2164 dynamic ram intel 8203 memory ic 2118

    STR F 6168 31 v power

    Abstract: lt 8207 ta 8207 k STR F 6168 2118 ram 8086 ic tester circuit diagram DRAM Refresh Control with the 80186 80188 iapx 286 CA2TC RT 8206
    Text: in t e f p n m 8207 ADVANCED DYNAMIC RAM CONTROLLER Provides All Signals Necessary to Control 16K 2118 , 64K (2164A) and 256K Dynamic RAMs • Supports Intel iAPX 86, 88, 186, 188, and 286 Microprocessors Directly Addresses and Drives up to 2 Megabytes without External Drivers


    OCR Scan     		PDF Dynami-T34 --T36--TBUF --T34 --T36--TBUF STR F 6168 31 v power lt 8207 ta 8207 k STR F 6168 2118 ram 8086 ic tester circuit diagram DRAM Refresh Control with the 80186 80188 iapx 286 CA2TC RT 8206

    intel 8202

    Abstract: S202A 8202a intel microprocessor pin diagram intel 8202 DYNAMIC CONTROLLER intel 8088 memory 4511 pin configuration 8202A 8202 rq block diagram pin diagram of ic 4511 TCA 4511
    Text: intéf 8202A DYNAMIC RAM CONTROLLER Provides All Signals Necessary to Con­ trol 2117, or 2118 Dynamic Memories • Provides Transparent Refresh Capability Directly Addresses and Drives Up to 64K Bytes Without External Drivers ■ Fully C o m p atib le w ith Intel 8 0 8 0 A ,


    OCR Scan     		PDF 202A-1 202A-3 82Q2A intel 8202 S202A 8202a intel microprocessor pin diagram intel 8202 DYNAMIC CONTROLLER intel 8088 memory 4511 pin configuration 8202A 8202 rq block diagram pin diagram of ic 4511 TCA 4511

    memory ic 2118

    Abstract: 8202A Dynamic RAM Controller 8202a intel microprocessor pin diagram
    Text: inteT 8202A DYNAMIC RAM CONTROLLER • Provides All Signals Necessary to Con­ trol 2117, or 2118 Dynamic Memories ■ Provides Transparent Refresh Capability ■ Directly Addresses and Drives Up to 64K Bytes Without External Drivers ■ Fully C o m p atib le w ith Intel 8 0 8 0 A ,


    OCR Scan     		PDF 202A-1 202A-3 82Q2A memory ic 2118 8202A Dynamic RAM Controller 8202a intel microprocessor pin diagram

    Untitled

    Abstract: No abstract text available
    Text: intel ~ ¡SM001DR09P 9-CHIP 1M x 9 (1,048,576 x 9) DYNAMIC RAM MEMORY MODULE WITH FAST PAGE MODE *4 (Formerly Known as 21019) m Performance Range 1 o ÌSM001DR09P 1 Parameter CO Symbol Units tRAC Access Tim e from RAS 70 80 ns tcA C Access Tim e from CAS


    OCR Scan     		PDF SM001DR09P SM001DR09P 30-Pin

    Untitled

    Abstract: No abstract text available
    Text: O M F Û fô M Â T O ! * ] intel 251236 512K x 36-BIT DYNAMIC RAM MEMORY MODULE WITH PAGE MODE • Performance Range Parameters 251236-08 251236-10 Units Accès Time from RAS tRAC 80 100 ns Access Time from CAS (tcAc) 20 25 ns Read Cycle Time (tRc) 150


    OCR Scan     		PDF 36-BIT 72-Pin