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    INTEL EPROM INTELLIGENT ALGORITHM Search Results

    INTEL EPROM INTELLIGENT ALGORITHM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    INTEL EPROM INTELLIGENT ALGORITHM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TN28F020-150

    Abstract: 28F020 80C186 intel 28F020
    Text: E n n n n n n n 28F020 2048K 256K X 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase  2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µS Typical Byte-Program  4 second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% VPP


    Original     		28F020 2048K 32-Lead E28F020-90 N28F020-90 E28F020-120 N28F020-120 E28F020-150 N28F020-150 TN28F020-150 80C186 intel 28F020 PDF

    AP28F512-120

    Abstract: AP28F512 A28F512 28F512 AP28F512-150 AN28F512-120 AN28F512 INTEL 80C186 ER-23 intel Automotive
    Text: A28F512 512K 64K x 8 CMOS FLASH MEMORY (Automotive) Y Extended Automotive Temperature Range b 40 C to a 125 C Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 1 Second Chip-Program Y


    Original     		A28F512 32-Pin ER-20 ER-23 A28F512 RR-60 AP-316 AP-325 AP28F512-120 AP28F512 28F512 AP28F512-150 AN28F512-120 AN28F512 INTEL 80C186 ER-23 intel Automotive PDF

    TN28F010-120

    Abstract: 28F010 N28F010-120 TN28F010 intel 28F010 1N914 80C186 n28f010-150 TP28F010
    Text: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP


    Original     		28F010 1024K 28F010 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 N28F010-120 TN28F010-120 N28F010-120 TN28F010 intel 28F010 1N914 80C186 n28f010-150 TP28F010 PDF

    28F010

    Abstract: TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020
    Text: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP


    Original     		28F010 1024K 28F010 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 N28F010-120 TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020 PDF

    AN28F010-150

    Abstract: AN28F010-120 28F010 80C186 A28F010 AP28F010-150 intel Automotive
    Text: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) Y Automotive Temperature Range b 40 C to a 125 C Y Flash Memory Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program Y


    Original     		A28F010 1024K 32-Pin 32-Lead AP28F010-120 AP28F010-150 AN28F010-120 AN28F010-150 AN28F010-150 AN28F010-120 28F010 80C186 A28F010 AP28F010-150 intel Automotive PDF

    intel 28F256

    Abstract: intel 28F256 flash intel 28F256 plcc A28F256A a28f256 28F256A 28F256 CMOS FLASH intel 28F256 dip 80C186 AP-316
    Text: A28F256A 256K 32K x 8 CMOS FLASH MEMORY Automotive Y Extended Automotive Temperature Range b 40 C to a 125 C Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 0 5 Second Chip-Program


    Original     		A28F256A 32-Pin 32-Lead AP28F256A-120 AP28F256A-150 AN28F256A-150 intel 28F256 intel 28F256 flash intel 28F256 plcc A28F256A a28f256 28F256A 28F256 CMOS FLASH intel 28F256 dip 80C186 AP-316 PDF

    P28F256A-150

    Abstract: 28F256A intel 80c186 N28F256A-120 80C186 P28F256A-120 intel 28f256a AP-325, Guide to Flash Memory Reprogramming N28F256A-150
    Text: 28F256A 256K 32K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 0 5 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read


    Original     		28F256A 32-Pin 32-Lead P28F256A-120 P28F256A-150 N28F256A-120 N28F256A-150 ER-20 ER-24 RR-60 P28F256A-150 28F256A intel 80c186 N28F256A-120 80C186 P28F256A-120 intel 28f256a AP-325, Guide to Flash Memory Reprogramming N28F256A-150 PDF

    29F020

    Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010
    Text: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program


    Original     		28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010 PDF

    free circuit eprom programmer

    Abstract: 93C46 programmer 40 pin eprom programmer circuit EPMASTER LV48 atmel 93C46 93c46 atmel adapter 48-pin TSOP intel 27c512 eprom ICE Technology 93C46 dip
    Text: EPMaster LV48 - EPROM Programmer FEATURES u u u u u u u u An entry level programmer, supporting a full range of memory devices, and an ideal introduction for device programming. Intelligent software programs devices using only manufacturer approved algorithms,


    Original     		48-pins 16-bit 42-pin 48-pin 64Mbit EPMLV48-xxx FL34228. free circuit eprom programmer 93C46 programmer 40 pin eprom programmer circuit EPMASTER LV48 atmel 93C46 93c46 atmel adapter 48-pin TSOP intel 27c512 eprom ICE Technology 93C46 dip PDF

    28F512

    Abstract: 290204 231369 N28F512-120 P28F512 28F512 input id BIOS 32 Pin PLCC intel 28f512 TN28F512-120 TP28F512-120
    Text: 28F512 512K 64K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 1 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read 120 ns Maximum Access Time


    Original     		28F512 32-Pin 32-Lead Microcontrolle8F512-120 P28F512-150 N28F512-150 TN28F512-120 ER-20 ER-24 RR-60 28F512 290204 231369 N28F512-120 P28F512 28F512 input id BIOS 32 Pin PLCC intel 28f512 TN28F512-120 TP28F512-120 PDF

    Vpp of 27256 eprom

    Abstract: No abstract text available
    Text: CMOS 256K 32K x 8 OTPROM/EPROM FEATURES • 32,768 x 8 bit organization • Access times: LH57254J: 70/90 ns LH57254: 90 ns • Single +5 V power supply • High speed programming: Compatible to INTEL intelligent programming algorithm PIN CONNECTIONS


    OCR Scan     		LH57254J: LH57254: 28-PIN LH57254/J LH57254 28-pin, 600-mil D1P28-P-600) Vpp of 27256 eprom PDF

    Untitled

    Abstract: No abstract text available
    Text: in tJ . A27C256 256K 32K x 8 CHMOS EPROM Automotive • Extended Automotive Temperature Range: -40°C to +125°C ■ Fast Programming -Q uick-P ulse Programming Algorithm — Programming Time as Fast as 4 Seconds ■ Noise Immunity Features — ± 10% Vcc Tolerance


    OCR Scan     		A27C256 28-Pin 32-Lead A27C256 144-bit PDF

    intel 87c257

    Abstract: AD87C257-200V10 80C252 AN87C257-200V10 Intel 80c196 Packaging Information N87C257 87C257 87C257-120V10 80C196 intel eprom Intelligent algorithm
    Text: in te i A87C257 256K 32K x 8 CHMOS LATCHED EPROM Automotive Fast Programming — Quick-Pulse Programming Algorithm — Programming Time as Fast as 4 Seconds Extended Automotive Temperature Range: -40°C to + 125°C CHMOS/NMOS Microcontroller and Microprocessor Compatible


    OCR Scan     		A87C257 87C257-lntegrated 28-Pin 87C257 256K-bit AD87C257-120V10 AN87C257-120V10 AD87C257-200V10 AN87C257-200V10 intel 87c257 80C252 AN87C257-200V10 Intel 80c196 Packaging Information N87C257 87C257-120V10 80C196 intel eprom Intelligent algorithm PDF

    80C252

    Abstract: No abstract text available
    Text: intei A87C257 256K 32K x 8 CHMOS LATCHED EPROM Automotive Extended Automotive Temperature Range: -40°C to +125°C Fast Programming — Quick-Pulse Programming Algorithm — Programming Time as Fast as 4 Seconds CHMOS/NMOS Microcontroller and Microprocessor Compatible


    OCR Scan     		A87C257 28-Pin 87C257-lntegrated 87C257 256K-bit A87C257 AD87C257-120V10 AN87C257-120V10 AD87C257-200V10 AN87C257-200V10 80C252 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% Vpp ■ High-Performance Read


    OCR Scan     		28F020 2048K 32-Pin 32-Lead PDF

    PLD intel

    Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
    Text: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program


    OCR Scan     		Q07bBbl 28F010 1024K NonvolaF010-120 TN28F010-120 P28F010-150 N28F010-150 N28F010-90V05 E28F010-120 E28F010-150 PLD intel intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD PDF

    intel 28F020

    Abstract: flash n28f020 p28f020 28F020 E28F020 F28F020 intel PLD 29024 28f020-150 D28F020
    Text: INTEL CORP ÏÏEMORY /P L D / SbE D • 4f l2 bl 7 b QOTbETl 72^ ■ I T L 2 in t e i 2048K (256K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chlp-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jLLSTypical Byte-Program


    OCR Scan     		007L5< 2048K Nonvol020-200 F28F020-150 F28F020-200 TE28F020-90 TF28F020-90 TE28F020-150 TF28F020-150 ER-20, intel 28F020 flash n28f020 p28f020 28F020 E28F020 F28F020 intel PLD 29024 28f020-150 D28F020 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		28F010 1024K 32-Pin 32-Lead PDF

    TN28F010

    Abstract: 29020
    Text: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		1024K 28F010 USA/E69Q/1093/5K/MS TN28F010 29020 PDF

    intel 2708 eprom

    Abstract: memory EPROM 2708 intel eprom Intelligent algorithm intel 1702a eprom PM9080 intel EPROM intel 2716 eprom
    Text: intef ARTICLE REPRINT AR-265 March 1983 < Ä» / / A R e p r i n t w ith p e rm is s io n fro m E O N M a g a z in * : C o p y rig h t C ah ne rs, 1903. <8 ^ O RD ER N U M M R: 230*14-001 AR-26S Versatile algorithm, equipment cut EPROM programming time Programming high-density EPROMs for large-volume applications can


    OCR Scan     		AR-265 AR-26S intel 2708 eprom memory EPROM 2708 intel eprom Intelligent algorithm intel 1702a eprom PM9080 intel EPROM intel 2716 eprom PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 \iS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		28F020 2048K 32-Lead E28F020-90 E28F020-120 E28F020-150 TE28F020-90 TE28F020-120 TE28F020-150 PDF

    28F010T

    Abstract: 28F010
    Text: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		28F010 1024K 32-Pin 32-Lead 28F010-90 28F010-120 28F010-150 8F010-90 28F010T PDF

    Untitled

    Abstract: No abstract text available
    Text: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Autom otive) • Automotive Temperature Range: —40°C to + 1 25°C ■ Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program


    OCR Scan     		A28F010 1024K AP28F010-120 AN28F010-120 AP28F010-150 AN28F010-150 ER-20, ER-24, RR-60, AP-316, PDF

    Untitled

    Abstract: No abstract text available
    Text: in te i A28F256A 256K 32K x 8 CMOS FLASH MEMORY Automotive Extended Automotive Temperature Range -4 0 °C to + 125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 0.5 Second Chip-Program


    OCR Scan     		A28F256A AP28F256A-120 AP28F256A-150 AN28F256A-150 AP-316, 28F256A ER-21, 28F256 RR-60, PDF