BSP75NTA
Abstract: D8154
Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ
|
Original
|
BSP75N
OT223
550mJ
522-BSP75NTA
BSP75NTA
BSP75NTA
D8154
|
PDF
|
TS16949
Abstract: ZXMS6002G ZXMS6002GTA
Text: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic
|
Original
|
ZXMS6002G
550mJ
D-81541
TS16949
ZXMS6002G
ZXMS6002GTA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZXMS6004SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Features and Benefits ADVANCE INFORMATION Product Summary • Continuos drain source voltage On-state resistance 60V 500mΩ Nominal load current VIN = 5V Clamping Energy
|
Original
|
ZXMS6004SG
480mJ
ZXMS6004SG
DS32247
|
PDF
|
BSP75N
Abstract: 24V PLC BSP75NTA
Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ
|
Original
|
BSP75N
OT223
550mJ
BSP75N
24V PLC
BSP75NTA
|
PDF
|
TS16949
Abstract: ZXMS6002G ZXMS6002GTA
Text: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic
|
Original
|
ZXMS6002G
550mJ
D-81541
TS16949
ZXMS6002G
ZXMS6002GTA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMS6005DG ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary • Features and Benefits Continuous drain source voltage On-state resistance Nominal load current VIN = 5V
|
Original
|
ZXMS6005DG
490mJ
ZXMS6005DG
DS32247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZXMS6003G 60V N-channel self protected enhancement mode IntelliFETTM MOSFET with programmable current limit Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description
|
Original
|
ZXMS6003G
550mJ
D-81541
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 mΩ Nominal load current VIN = 5V 2A Clamping Energy 490 mJ SOT223 Package
|
Original
|
ZXMS6005DG
OT223
ZXMS6005DG
DS32247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description
|
Original
|
ZXMS6004SG
480mJ
ZXMS6004SG
Log62-3154
D-81541
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION SOT223 PACKAGE Self protected low side MOSFET. Monolithic over temperature, over current, over
|
Original
|
BSP75G
550mJ
OT223
|
PDF
|
BSP75G
Abstract: No abstract text available
Text: BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION Self protected low side MOSFET. Monolithic over temperature, over current, over
|
Original
|
BSP75G
550mJ
OT223
SCBSP75GDSC
BSP75G
|
PDF
|
ZXMS6004DT8TA
Abstract: ZXMS6004DT8
Text: A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.2 A Clamping Energy 210 mJ SM8 Package
|
Original
|
ZXMS6004DT8
ZXMS6004DT8
DS32245
ZXMS6004DT8TA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZXMS6004SG Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET ADVANCE INFORMATION Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • • On-State Resistance Nominal Load Current VIN = 5V
|
Original
|
ZXMS6004SG
ZXMS6004SG
480mJ
DS33610
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMS6004FF 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary • Continuos drain source voltage On-state resistance Nominal load current VIN = 5V Clamping Energy Features and Benefits
|
Original
|
ZXMS6004FF
ZXMS6004FF
DS33609
|
PDF
|
|
|
BSP75N
Abstract: No abstract text available
Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over
|
Original
|
BSP75N
550mJ
OT223
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMS6005SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 mΩ Nominal load current VIN = 5V 2A Clamping Energy 480 mJ SOT223 Package
|
Original
|
ZXMS6005SG
OT223
ZXMS6005SG
DS32249
|
PDF
|
ZXMS6006SG
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • • Nominal load current VIN = 5V
|
Original
|
ZXMS6006SG
480mJ
AEC-Q101
DS35141
ZXMS6006SG
|
PDF
|
dual Solenoid Driver
Abstract: ZXMS6006DT8TA 6006D
Text: A Product Line of Diodes Incorporated ZXMS6006DT8 ADVANCE INFORMATION 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • •
|
Original
|
ZXMS6006DT8
210mJ
AEC-Q101
DS35143
dual Solenoid Driver
ZXMS6006DT8TA
6006D
|
PDF
|
siemens automotive relay dc 12v
Abstract: Bsp78
Text: June 2010 Know How Guide IntelliFET - low side self-protected MOSFET Features Benefits • Load dump protection • Designed for harsh operating environments without the need for extra clamps. • Thermal shutdown non-latching auto restart • Self-protecting when in high
|
Original
|
D-81541
A1103-04,
siemens automotive relay dc 12v
Bsp78
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZXMS6004FF 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary • Continuos drain source voltage On-state resistance Nominal load current VIN = 5V Clamping Energy Features and Benefits 60V 500mΩ 1.3A 90mJ Description
|
Original
|
ZXMS6004FF
ZXMS6004FF
DS33609
|
PDF
|
ZXMS6006D
Abstract: ZXMS6006DG ZXMS6006DGTA zxms6006
Text: A Product Line of Diodes Incorporated ZXMS6006DG ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • • Nominal load current VIN = 5V
|
Original
|
ZXMS6006DG
490mJ
ZXMS6006DG
DS35142
ZXMS6006D
ZXMS6006DGTA
zxms6006
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ
|
Original
|
BSP75N
OT223
550mJ
|
PDF
|
ZXMS6003
Abstract: TS16949 ZXMS6003G ZXMS6003GTA SC36
Text: ZXMS6003G 60V N-channel self protected enhancement mode IntelliFETTM MOSFET with programmable current limit Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description
|
Original
|
ZXMS6003G
550mJ
D-81541
ZXMS6003
TS16949
ZXMS6003G
ZXMS6003GTA
SC36
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VZETIX SEMICONDUCTORS BSP75G 60V self-protected low-side IntelliFET MOSFET switch Summary Continuous drain source voltage V ds=60V On-state resistance 550m O Nominal load current 1.4A V|N = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. M onolithic over tem perature, over
|
OCR Scan
|
BSP75G
550mJ
OT223
|
PDF
|