7UL1G07FU
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Toshiba Electronic Devices & Storage Corporation
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One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC |
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MG800FXF1ZMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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TRS8E65H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L |
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TRS10E65H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L |
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