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    INVERTER MMA 300 Search Results

    INVERTER MMA 300 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd

    INVERTER MMA 300 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KSR2202 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R es is to r B u ilt In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R, = 10Kn, R, = 10KQ) • Complement to KSR1202 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    PDF KSR2202 KSR1202

    R713

    Abstract: SR1210
    Text: K SR 1210 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in Was Resistor {R>10kQ) • Complement to KSR2210 ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic


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    PDF KSR2210 100/iA. R713 SR1210

    Untitled

    Abstract: No abstract text available
    Text: KSR1207 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Rt ” 221tü, Rî=47kQ) • Complement to KSR2207 ABSOLUTE MAXIMUM RATINGS (TA-25t:)


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    PDF KSR1207 KSR2207 100/iA.

    KSR2209

    Abstract: No abstract text available
    Text: .SAMSUNG SEMICONDUCTOR INC IME KSR2209 D | 7 ^ 1 4 2 0 0 Ü7 1 S 1 1 | PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is to r B u ilt In • Sw itching Circuit, Inverter, Interface circuit Driver circuit • Built in bias R e s is to r (R =4.7K $1)


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    PDF 00D71S1 KSR2209 toKSRi209 O-92S T-2rr-13

    Untitled

    Abstract: No abstract text available
    Text: KSR1007 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias R esistor Built In TO -92 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R 1=22K£i, R2=47K£i) • C om plem ent to KSR2007 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


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    PDF KSR1007 KSR2007

    304 TRANSISTOR

    Abstract: transistor ksr1010 KSR1010 KSR2010 Inverter mma 300
    Text: SAMSUNG SEMICONDUCTOR I N C T ^ W f 14E KSR1010 D I 7^4142 0007033 b | NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching Circuit, Inverter, interface circuit Driver circuit • Built in bias Resistor (R =10K i)


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    PDF INCT-35 KSR1010 KSR2010 INCy-35^ 304 TRANSISTOR transistor ksr1010 KSR2010 Inverter mma 300

    Untitled

    Abstract: No abstract text available
    Text: KSR2005 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R ,=4.7K !i, R2=10KSi) • Complement to KSR1005 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    PDF KSR2005 10KSi) KSR1005

    KSR1001

    Abstract: KSR2001
    Text: KSR1001 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is to r B u ilt In • Sw itching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=4.7KÎ1, Ri= 4.7Kfi) • Complement to KSR2001 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    PDF KSR1001 KSR2001 KSR1001 KSR2001

    KSR1005

    Abstract: KSR2005
    Text: SAMSUNG SEMICONDUCTOR INC' KSR2005 14E | 7 ^ 1 4 2 0007CHS b | PNP EPITAXIAL SILICON TRANSISTOR T - SWITCHING APPLICATION Bias Resistor Built In 31 - 13 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=4.7KO, R,=10KO)


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    PDF KSR2005 KSR1005 KSR1005

    Untitled

    Abstract: No abstract text available
    Text: KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Ri*10kQ, R2*47kQ) • Complement to KSR2006 ABSOLUTE MAXIMUM RATINGS {Tft=25t:)


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    PDF KSR1006 KSR2006

    Untitled

    Abstract: No abstract text available
    Text: KSR1201 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor(R,= 4.7Kfl, R:=4.7KQ) • Complement to KSR2201 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)


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    PDF KSR1201 KSR2201

    T092S

    Abstract: 47KQ KSR1207 KSR2207
    Text: SAMSUNG SEMICONDUCTOR INC KSR2207 J| 14E D | TTbMlMS 0007147 T PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver Circuit • Built in bias Resistor (H ,= 2 2 K Q R ,= 4 7 K 0 )


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    PDF 71b414E 0007l KSR2207 KSR1207 T092S KSR2207 Bi-47K T092S 47KQ KSR1207

    Untitled

    Abstract: No abstract text available
    Text: KSR2208 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R e s is to r B uilt In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R ,= 4 7 K íi, Rj = 22KÍ¡) TO-92S • C om p le m en t to KSR1208


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    PDF KSR2208 O-92S KSR1208 0G2S011

    Untitled

    Abstract: No abstract text available
    Text: KSR1109 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SO T-23 • Sw itching circuit. Inverter, Interface circuit, Driver C ircu it • B uilt in b ias R esisto r (R=4.7kfl) • Com plem ent to KSR 2109 ABSOLUTE MAXIMUM RATINGS (TA=25t:)


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    PDF KSR1109

    Untitled

    Abstract: No abstract text available
    Text: KSR2201 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R i =4.7kfl, R2=4.7kfl) • Complement to KSR1201 A B S O LU T E MAXIMUM RATINGS (TA*25TC)


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    PDF KSR2201 KSR1201 -10mA -10mA, -100/iA -20mA

    KSR1202

    Abstract: KSR2202 c03v
    Text: SAMSUNG SE M IC O N D U C T O R INC T -3 iW I IM E KSR1202 — — D 00070t>S fl | NPN EPITAXIAL SILICON TRANSISTOR ——— ^ — SWITCHING APPLICATION — — — mi mi . . « —— _ B ias R e s is to r B u ilt In TO-92S • Switching circuit, Inverter, Interface circuit Driver circuit


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    PDF 00q70t KSR1202 KSR2202 KSR2202 c03v

    TRANSISTOR KJ

    Abstract: KSR1007 KSR2007
    Text: SAMSUNG SEMI CONDUCTOR I NC _ _ _ 1 4 E KSR2007 D | TTbMlMa 0 0 0 7 Q CH 3 | PNP EPITAXIAL SILICON TRANSISTOR 1 3 7-13 - SWITCHING APPLICATION * B ia s R e sis to r Built In • Sw itch ing C ircuit, Inverter, Interface circuit Driver circuit • Built in b ias R esistor (R ,= 2 2 K O r 2= 4 7 K 0 )


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    PDF KSR2007 22Kfl 47Kil) KSR1007 -10jm, TRANSISTOR KJ KSR1007 KSR2007

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSR2206 SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (1 ^= 1 0K£1, R2=47K£1) • C om plem ent to KSR 1206 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


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    PDF KSR2206

    Untitled

    Abstract: No abstract text available
    Text: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R 1=22K£1, R2=47K£1) • C om plem ent to KSR 1207 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


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    PDF KSR2207 -10mA,

    Untitled

    Abstract: No abstract text available
    Text: KSR2007 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R ,= 2 2K 0 R 2=47KO) • Complement to KSR1007 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    PDF KSR2007 KSR1007

    KSR1206

    Abstract: KSR2206
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSR2206 SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R ^ IO K Q , R2=47K£i) • C om plem ent to KSR 1206 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


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    PDF KSR2206 KSR1206 O-92S -10nA, KSR1206 KSR2206

    Inverter mma 300

    Abstract: KSR1201 KSR2201
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSR1201 SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =4.7K£1, R2=4.7K£1) • C om plem ent to KSR2201 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


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    PDF KSR1201 KSR2201 Inverter mma 300 KSR1201 KSR2201

    Untitled

    Abstract: No abstract text available
    Text: KSR2004 PNP EPITAXIAL SILICON TRAN SISTO R SW ITCHING APPLICATION Bias Resistor Built In - • Switching circuit, Inverter, Interface circuit, Driver Circuit • BuiK in bias Resistor (R ,-47U , R2-4nQ) • Complement to KSR1004 TO-92 ABSO LU TE MAXIMUM RATINGS (TA-2 5 <C )


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    PDF KSR2004 --------TO-92 KSR1004

    KSR1202

    Abstract: KSR2202
    Text: KSR2202 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (Ri =10, R2=10K£1) • C om plem ent to KSR 1202 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


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    PDF KSR2202 KSR1202 O-92S -10nA, KSR1202 KSR2202