R8811
Abstract: R8810
Text: PRELIMINARY Specifications Parameter R8810 Gain Typ. 2x Dark Current (Typ.) Operating Pressure Level (Max.) 103 R8811 (at -1000 V) 1x 105 (at -1500 V) 3 x 10-14 A (at -1000 V) 3 x 10-14 A (at -1500 V) 1 Pa * 1 x 10-2 Pa 350 °C Bake-Out Temperature (at 10-4 Pa, Max.)
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R8810
R8811
R8810
B0061EA
B0036EA
R8811
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R5150
Abstract: R5150-90
Text: PRELIMINARY Compact Ion Detectors R5150-50, -90 Detection Efficiency vs. Input Ion Energy Structure R5150-90 GND Q-POLE FARADAY-CUP The electron lens created by the Faraday cup, the ion deflection electrodes and the electron multiplier electrodes maintains high detection efficiency even when input ion energy increases.
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R5150-50,
R5150-90
R5150-
B0059EA
SE-171-41
R5150
R5150-90
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lc proximity detector ic
Abstract: lc oscillator AM313
Text: IC FOR PROXIMITY DETECTOR AM 313 GENERAL DESCRIPTION The AM 313 is a bipolar monolithic Integrated Circuit designed for proximity detection applications. The function is based on the damping of an LC oscillator which switches a transistor and LED output. FEATURES
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plasma cutter
Abstract: tanaka al wire stroboscop grinding mill ultrasonic movement detector cuzn tanaka silver alloy wire ion metal detector for detect gold in ground field UPS error alloy tungsten corrosion plating resistance gold
Text: FAILURE ANALYSIS IV. FAILURE ANALYSIS 1. WHY FAILURE ANALYSIS IS NECESSARY? 2. WHAT IS FAILURE ANALYSIS? 3. PROCEDURE OF FAILURE ANALYSIS 3.1 INVESTIGATION OF FAILURE CIRCUMSTANCES 3.2 PRESERVATION OF FAILED DEVICES 3.3 VISUAL INSPECTION 3.4 ELECTRICAL TESTS
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IS705RH
Abstract: IS-705RH IS-705 25x10 gold metal detectors Upsets 12v negative ion generator triggering with microprocessor Single-Event
Text: Single Event Testing of the IS-705RH Microprocessor Supervisory Circuit October 2000 Introduction The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuits, including single-event latchup SEL ,
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IS-705RH
IS705RH
2x106
1x106
5x106
IS-705RH
IS-705
25x10
gold metal detectors
Upsets
12v negative ion generator
triggering with microprocessor
Single-Event
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AS8310
Abstract: SOIC16 micromechanical
Text: Data Sheet AS8310 - preliminar y AS8310 Low g Accelerometer Key Features - - Single +5V supply SOIC16 package with sensitivity in Z – axis direction Ratiometric analog output Accurate over a wide temperature range –40°C to +125°C without any compensation
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AS8310
AS8310
SOIC16
100Hz
micromechanical
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micromechanical
Abstract: capacitor 10414
Text: Data Sheet AS8310 - preliminar y AS8310 Low g Accelerometer Key Features - - Single +5V supply SOIC16 package with sensitivity in Z – axis direction Ratiometric analog output Accurate over a wide temperature range –40°C to +125°C without any compensation
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AS8310
micromechanical
capacitor 10414
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UL1642
Abstract: Battery Protection IC S-8240 M61040 Li Ion battery charger cct. diagram
Text: 990515 Applications of battery power supply devices and battery drive circuit design Table of Contents 1. Overview . 1 2. Battery Power Supply Device Performance. 1
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van allen belt
Abstract: Temic date array signal path designer TEMIC DATABOOK
Text: Radiation TEMIC Radiation Policy Introduction Higher performance, speed, power consumption and cost are key words designers have to keep in mind to succeed in a fast changing and competitive world wide market. But, before they finally accomplish their dream, their
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10Mrad
van allen belt
Temic date array
signal path designer
TEMIC DATABOOK
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proton rx 4000 watts power amplifier circuit diagram
Abstract: Hamamatsu r300 0812E H5783
Text: PHOTOMULTIPLIER TUBES Basics and Applications THIRD EDITION Edition 3a PHOTON IS OUR BUSINESS 2007 HAMAMATSU PHOTONICS K. K. ▲ Photomultiplier Tubes ▲ Photomultiplier Tube Modules © 2007 HAMAMATSU PHOTONICS K. K. Introduction Light detection technolgy is a powerful tool that provides deeper understanding of more sophisticated
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OTH9001E03a
proton rx 4000 watts power amplifier circuit diagram
Hamamatsu r300
0812E
H5783
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metal detector plans
Abstract: "electromagnetic pulse" DMILL van allen belt satellite neutron detector nuclear CMOS Process 3um signal path designer
Text: Introduction Higher performance, speed, power consumption and cost are key words designers have to keep in mind to succeed in a fast changing and competitive world wide market. But, before they finally accomplish their dream, their desires often turn into nightmares. This is mostly because new generation components are using very aggressive
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quartz kd
Abstract: No abstract text available
Text: Data Sheet PT7V4050 PLL with quartz stabilized VCXO |
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PT7V4050
PT0125
quartz kd
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66rh
Abstract: Manual of cd 2a
Text: I e Ref No- 1792054-O A l/9 [ 1 For customer approval 1 ] For cost estimation [l/l For reference QDWCT SPECIFICATION Part Number: [ [ 1 Please receive this specification. in proof of your receipt. JPlleasereturn one (1) copy of this specification by roval for this specification will orally be confirmed by us later.
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1792054-O
1792054dA
66rh
Manual of cd 2a
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DATA SHEET TEA1202TS Battery power unit Objective specification File under Integrated Circuits, IC03 2000 Jun 08 Philips Semiconductors Objective specification Battery power unit TEA1202TS FEATURES GENERAL DESCRIPTION • Fully integrated battery power unit, including complete
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TEA1202TS
TEA1202TS
06-Aug-00
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DATA SHEET TEA1202TS Battery power unit Objective specification File under Integrated Circuits, IC03 2000 Jun 08 Philips Semiconductors Objective specification Battery power unit TEA1202TS FEATURES GENERAL DESCRIPTION • Fully integrated battery power unit, including complete
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06-Aug-00
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forward converter tl494
Abstract: tl494 battery charger 14n50e uc3843a a uc3843b half bridge TL494 tl494 half bridge full bridge pwm controller sg3526 analog devices 751n tl494 PWM dc to dc boost regulator tl494 PWM flyback
Text: Power Supply Circuits In Brief . . . Page Linear Voltage Regulators . . . . . . . . . . . . . . . . . . . . . . . 4.2–2 Fixed Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2–2 Adjustable Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2–4
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ion chamber
Abstract: SM110 pn2222a fairchild circuit for piezoelectric sensor fire alarm using zener ion metal detector smoke detector schematic schematic 4772 mosfet driver ion chamber smoke
Text: designed for . . • a SMI 10 micropower smoke detector circuit BENEFITS • Smoke Detector Systems High Impedance Sensor Trip Point Detector • Streamlines U L Approval of Smoke Detector System o U L C om ponent Recognized o A llo w s Systems to Meet 1 Year Life
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til 701
Abstract: photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral
Text: til// 'rr* 'WWr Semefab SILICON DESIGN — WAFER FABRICATION SEMEFAB SCOTLAND LTD. is the Group's wafer fabrication facility based in Glenrothes, Fife. Located adjacent to Compugraphics, Europe's largest independent mask manufacturer, SEMEFAB has a capacity of
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100mm
10OOnm
til 701
photodiode die WAFER
MAGNATEC LATERAL MOSFET
magnatec mosfets
depletion mode mosfet 100 MHz
semefab
Power MOSFET Wafer
pps 501
semelab mosfet lateral
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itt 3906
Abstract: Supertex smoke detector circuit
Text: □ Low Battery Level Beep Alarm □ Continuous or Intermittent Alarm □ Low Power Consumption — 10uA Maximum □ High Noise Immunity CMOS Technology □ Meets UL217 Requirements □ Uses Economical Zinc Carbon 9V Battery □ No Voltage Detection Adjustment Necessary
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UL217
14-lead
10-lead
itt 3906
Supertex smoke detector circuit
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back Tunnel diode
Abstract: metal detectors circuit "back diode" point contact diode tunnel diode application
Text: D fU M iu 'H C General Infotmation RF detection is achieved through utilization of the nonlinear, current-voltage characteristics of a semiconducting junction. Two fundamental detector diode types are used; silicon-based, Schottky barrier and germanium-based, tunnel or back diodes.
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LM760
Abstract: No abstract text available
Text: LM760 National Semiconductor LM760 High Speed Differential Comparator General Description Features The LM760 is a differential voltage comparator offering con siderable speed improvement over the LM710 family and operates from symmetric supplies of ±4.5V to ±6.5V. The
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LM760
LM760
LM710
TL/H/10067-10
TL/H/10067-9
TL/H/10067-11
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back Tunnel diode
Abstract: Tunnel Diode tunnel diode application
Text: Detector Overview General Inform ation RF detection is achieved through utilization o f th e nonlinear, current-voltage characteristics o f a semiconducting junction. Two fundamental d ete cto r diode types are used; silicon-based, Schottky barrie r and germanium-based, tunnel o r back diodes.
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VOICE control elevator
Abstract: No abstract text available
Text: C P O a te CORPORATION CYG2000/CYG2001 Performance Specifications CY G 2000/CY G 2001 Cybergate 2000 Data Access Arrangement Module DESCRIPTION CP Clare’s “Cybergate™ 2000/2001” DAA module provides a complete telephone line interface circuit in a small 1.07" x 1.07" x
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CYG2000/CYG2001
2000/CY
1-800-CPCLARE
CYG2000/CYG2001
VOICE control elevator
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ionization chamber
Abstract: Amersham SD3A SD3P ion chamber ion chamber smoke Ionization chambers metal detector diagram PI piezoelectric alarm Wired Smoke Detector alarm
Text: — C/Î o O 2 CO S2 o n > g* z o JX > 2 00 m 33 H < •o GENERAL DESCRIPTION FEATURES □ Capable of Directly Driving Piezoelectric Horn m The SD 3/S D 3A is a CMOS integrated c irc u it designed fo r an io n iza tio n chamber ty p e smoke detector th a t d ire c tly drive a piezo
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UL217
14-lead
10-lead
to-100
ionization chamber
Amersham
SD3A
SD3P
ion chamber
ion chamber smoke
Ionization chambers
metal detector diagram PI
piezoelectric alarm
Wired Smoke Detector alarm
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