GS38300143230
Abstract: Carlo Gavazzi Group relay
Text: DuplineSa fe – The TÜV-approved Safety bus with unique features Keep up production and make your plant safer The trend is clear – big advantages can be achieved using bus communication in safety related systems. Compared to the traditional serial wiring of NC safety switches, the diagnostics is vastly improved. The
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I-20020
GS38300143230
Carlo Gavazzi Group relay
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3F54
Abstract: 3F26 cpu 8082 eZ80 3F10 PUG001305-0803 C00091 C00050 C00000-H C-0010-4
Text: eZ80L92 Development Kit External Flash Loader PUG001305-0803 Product User Guide Introduction The Flash Loader utility integrated within ZiLOG Developer Studio ZDS II provides the ability to program Flash memory inside an eZ80 processor on a target eZ80® Development Module via the eZ80® Development Platform. The ZDS II
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eZ80L92
PUG001305-0803
3F54
3F26
cpu 8082
eZ80
3F10
PUG001305-0803
C00091
C00050
C00000-H
C-0010-4
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, PIPELINED ZBT SRAM MICRON I T O tW Q L ttffi INC. MT55L128L18P, MT55L64L32P, MT55L64L36P 2Mb ZBT SRAM 3.3V V dd, 3.3V I/O FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization
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MT55L128L18P,
MT55L64L32P,
MT55L64L36P
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Z9733
Abstract: No abstract text available
Text: ADVANCE MT55L256L18P, MT55L128L32P, MT55L128L36P 4.5Mb ZBT SRAM 3.3V V d d , Selectable Burst Mode FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization Fast cycle times: 7ns, 7.5ns, 8.5ns and 10ns
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MT55L256L1BP
Z9733
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Untitled
Abstract: No abstract text available
Text: ADVANCE M i m n M 2 5 b K X 1 8 , 1 2 8 K X 3 2 /3 6 I LVTTL, PIPELINED ZBT SRAM d R M h H - .U IV I U MT55L256L18P, MT55L128L32P, MT55L128L36P ZBT SRAM 3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • •
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MT55L256L18P,
MT55L128L32P,
MT55L128L36P
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM M IC R O N I TECHNOLOGY, INC. MT58L128L18D, MT58L64L32D, MT58L64L36D 2Mb SYNCBURST SRAM 3 . 3 V V d d , 3 .3 V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • •
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MT58L128L18D,
MT58L64L32D,
MT58L64L36D
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O I N 25 6 K x 18, 12 8 K x 32/ 36 LV T T L , P I P E L I N E D Z B T S R A M TECHNOLOGY, INC. MT55L256L18P, MT55L128L32P, MT55L128L36P 4.5Mb ZBT SRAM 3 . 3 V V d d , Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization
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MT55L256L18P,
MT55L128L32P,
MT55L128L36P
100-PIN
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Untitled
Abstract: No abstract text available
Text: ADVANCE 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18P, MT55L128L32P, MT55L128L36P; MT55L256V18P, MT55L128V32P, MT55L128V36P 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization
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MT55L256L18P,
MT55L128L32P,
MT55L128L36P;
MT55L256V18P,
MT55L128V32P,
MT55L128V36P
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Untitled
Abstract: No abstract text available
Text: M m P ¿M O : 1 ¿O K X 1 « , b 4 K X 6 Z / 6 b n M I 3.3V I/O, PIPELINED ZBT SRAM O lV ilU ^ IV IU MT55L128L18P, MT55L64L32P, MT55L64L36P ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 7ns, 7.5ns, 8.5ns and 10ns
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OCR Scan
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MT55L128L18P,
MT55L64L32P,
MT55L64L36P
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PDF
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 PIPELINED, SCD SYNCBURST SRAM MT58L128L18P, MT58L64L32P, MT58L64L36P; MT58L128V18P, MT58L64V32P, MT58L64V36P 2Mb SYNCBURST SRAM 3.3V Vdd, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES • Fast clock and OE# access times
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OCR Scan
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MT58L128L18P,
MT58L64L32P,
MT58L64L36P;
MT58L128V18P,
MT58L64V32P,
MT58L64V36P
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554715-1
Abstract: No abstract text available
Text: Interconnection Systems Selection Guide 82750 Miniature Ribbon Connector System CHAMP Revised 7-95 Special Application Connectors The C H A M P C onnector S ystem s are w id e ly d ive rsifie d and have e xp a n d e d to m eet not only the d e m a n d s of the
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 PIPELINED, SCD SYNCBURST SRAM M IC R O N I TECHNOLOGY, INC. MT58LC128K18D9, MT58LC64K32D9, MT58LC64K36D9; MT58LC128K18G1, MT58LC64K32G1, MT58LC64K36G1 2Mb SYNCBURST SRAM 3.3V V d d , 3.3V or 2.5V I/O, Pipelined, Single-Cycle
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MT58LC128K18D9,
MT58LC64K32D9,
MT58LC64K36D9;
MT58LC128K18G1,
MT58LC64K32G1,
MT58LC64K36G1
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM MT58LC128K18C6, MT58LC64K32C6, MT58LC64K36C6; MT58LC128K18F1, MT58LC64K32F1, MT58LC64K36F1 2Mb SYNCBURST SRAM 3 .3 V V dd , 3 .3 V or 2 .5 V I/O, Pipelined, Double-Cycle Deselect FEATURES • Fast clock and OE# access times
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MT58LC128K18C6,
MT58LC64K32C6,
MT58LC64K36C6;
MT58LC128K18F1,
MT58LC64K32F1,
MT58LC64K36F1
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256L18
Abstract: No abstract text available
Text: ADVANCE 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18P, MT55L128L32P, MT55L128L36P; MT55L256V18P, MT55L128V32P, MT55L128V36P 4Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES H ig h frequency an d 100 p ercen t bu s utilization
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MT55L256L18P,
MT55L128L32P,
MT55L128L36P;
MT55L256V18P,
MT55L128V32P,
MT55L128V36P
256L18
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 PIPELINED, DCD SYNCBURST SRAM MICRON I TECHNOLOGY, INC. MT58L512L18D, MT58L256L32D, MT58L256L36D 8Mb SYNCBURST SRAM 3.3V V dd, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • •
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MT58L512L18D,
MT58L256L32D,
MT58L256L36D
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Untitled
Abstract: No abstract text available
Text: ADVANCE M I I C R O 1 N TECHNOLOGY, INC. 2 8 K x 1 8 > 6 4 K 3 x 2 / 3 6 LV T T L , P I P E L I N E D Z B T S R A M MT55L128L18P, MT55L64L32P, MT55L64L36P 2.25Mb ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization
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OCR Scan
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MT55L128L18P,
MT55L64L32P,
MT55L64L36P
100-PIN
MT55L128L18P
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PDF
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, DCD SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L256L36D 8Mb SYNCBURST SRAM 3.3V Vdd, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • • • • • • • Fast clock and OE# access times
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OCR Scan
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MT58L512L18D,
MT58L256L32D,
MT58L256L36D
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PDF
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM M IC R O N I TECHNOLOGY, INC. MT58LC128K18C6, MT58LC64K32C6, MT58LC64K36C6; MT58LC128K18F1, MT58LC64K32F1, MT58LC64K36F1 2Mb SYNCBURST SRAM 3.3V V d d , 3.3V or 2.5V I/O, Pipelined, Double-Cycle Deselect
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MT58LC128K18C6,
MT58LC64K32C6,
MT58LC64K36C6;
MT58LC128K18F1,
MT58LC64K32F1,
MT58LC64K36F1
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AC97 LAYOUT GUIDE
Abstract: M62C MPC5200 MPC5200B AC97 CSR gps
Text: Freescale Semiconductor Application Note AN3045 Rev. 3, 5/2006 A Comparison of the MPC5200B Mask Set M62C with Prior MPC5200 Versions by: Charles Melear Infotainment, Multimedia, and Telematics Division 1 Overview This document describes the basic differences between
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AN3045
MPC5200B
MPC5200
MPC5200B
MPC52yees,
AC97 LAYOUT GUIDE
M62C
AC97
CSR gps
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PDF
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laf 0001
Abstract: SI 6822 intel 8049 intel 8059 S1 6822 jc-115 intel 8049 microcomputer MCS-48 intel AP-49 TLE 7233
Text: 1 AP-49 INTRODUCTION T h e Intel M C S -48 fa m ily o f m ic ro c o m p u te rs m arked th e firs t tim e an e ig h t bit c o m p u te r w ith program s torage, d a ta sto rag e, and I/O fa c ilitie s w as ava ila b le on a s in g le LSI chip. T h e p erfo rm an ce o f th e initial
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AP-49
MCS-48
laf 0001
SI 6822
intel 8049
intel 8059
S1 6822
jc-115
intel 8049 microcomputer
intel AP-49
TLE 7233
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424100-70
Abstract: No abstract text available
Text: bM2 7 SSS 0 0 4 1 7 ^ 3 0 1 S •NECEj DATA SHEET NEC M OS INTEGRATED CIRCUIT ELECTRON D EVICE /¿PD424100-L 4M BIT DYNAMIC CMOS RAM FAST PAGE MODE DESCRIPTION The NEC ¿(PD424100-L is a 4194304-w ord by 1 bit dynam ic CM O S RAM w ith optional fast page m ode. CM OS
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PD424100-L
PD424100-L
4194304-w
/JPD424100-L
26-pin
20-pin
PD424100V
S60-00
424100-70
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Untitled
Abstract: No abstract text available
Text: Vishay Electronic GmbH Hofmark-Aich-Str.36 D-84030 Landshut Telefon +49 871 86-0 www.vishay.com Document number: 13173 - Rev. 02 Capacitor protection relay
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D-84030
2556/QM/03
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Untitled
Abstract: No abstract text available
Text: ADVANCE 128K x 18. 64K x 32/36 3.3V I/O. PIPELINED, DCD SYNCBURST SRAM |U | = R O N MT58LC128K18C6, MT58LC64K32C6, MT58LC64K36C6 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect SYNCBURST SRAM FEATURES • Fast access times: 3.5ns, 3.8ns, 4.2ns, 4.5ns and 6ns
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OCR Scan
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MT58LC128K18C6,
MT58LC64K32C6,
MT58LC64K36C6
i32/36
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Untitled
Abstract: No abstract text available
Text: M I in P f lM 128K X 18, 64K X 32/36 3.3V I/O, PIPELINED, DCD SYN CBUR ST SRAM MT58LC128K18C5, MT58LC64K32C5, MT58LC64K36C5 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect SYNCBURST SRAM FEATURES • • • • • • • •
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OCR Scan
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MT58LC128K18C5,
MT58LC64K32C5,
MT58LC64K36C5
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