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    MIP4110

    Abstract: mip411 MIP414 MIP2E3D mip41 MIP4150MD MIP4140MS mip418 MIP4110MS MIP4120
    Text: Low noise from electric components and energy-saving at standby mode IPD Series for Quasi-resonant Power Supply MIP41X Series „ Overview This IPD (Intelligent Power Device) has been developed for switching power supplies, which adopts RCC quasi-resonant control


    Original     		PDF MIP41X MIP41 MIP4110 mip411 MIP414 MIP2E3D mip41 MIP4150MD MIP4140MS mip418 MIP4110MS MIP4120

    mip2f2

    Abstract: power supply LED 3w mip2f2 MIP2F2 IC mip2f mip2fx IC301 MIP2C2 MIP2C2 MIP2F2 power supply mip2f2 MIP022X
    Text: IPD Product Selection Guide October 1, 2008 Semiconductor Company, Panasonic Corporation Precautions on the Sales of IPDs 1 The sale and/or the export of IPD products to any customer or customers located in any country other than Japan is expressly prohibited by the Agreement made and executed by and between Power Integrations, Inc. and Panasonic Corporation.


    Original     		PDF

    mip2f2

    Abstract: MIP2F2 IC IC301 mip2f MIP2C2 MIP2F2 MIP2C2 MIP41X MIP022X mip025 2200p
    Text: IPD製品選択ガイド 2008年2月28日 Copyright C 2005 Matsushita Electric Industrial Co., Ltd. All rights reserved. 製品選択フローチャート Start 下の表に必要事項を書き込み右のＳｔａｒｔからフ ローチャートに沿って、製品を選択してください。


    Original     		PDF MIP022X 200mW 44130kHz MIP022X 100kHz 44kHz 130kHz 44kHz130kHz2 mip2f2 MIP2F2 IC IC301 mip2f MIP2C2 MIP2F2 MIP2C2 MIP41X mip025 2200p

    MIP417MD

    Abstract: MIP4170MD mip417m Secondary Regulator for VTR
    Text: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4170MD O-220IPD7-A2 MIP417MD artificP01* MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP417MD MIP4170MD mip417m Secondary Regulator for VTR

    MIP417MD

    Abstract: mip41 MIP4170MD MIP417 TO-220IPD7-A2 mip9l MIP55 SLB00097AED
    Text: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4170MD O-220IPD7-A2 MIP417MD MIP803/804 MIP816/826 MIP51£ MIP55£ MIP50£ MIP417MD mip41 MIP4170MD MIP417 TO-220IPD7-A2 mip9l MIP55 SLB00097AED

    MIP414MD

    Abstract: MIP414 MIP4140MD mip41 mip4140 MIP9E mip9l TO-220IPD7-A2 MIP803 MIP55
    Text: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4140MD O-220IPD7-A2 MIP414MD MIP803/804 MIP816/826 MIP51£ MIP55£ MIP50£ MIP414MD MIP414 MIP4140MD mip41 mip4140 MIP9E mip9l TO-220IPD7-A2 MIP803 MIP55

    MIP414MD

    Abstract: MIP4140MD MIP41
    Text: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4140MD O-220IPD7-A2 MIP414MD artificP01* MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP414MD MIP4140MD MIP41

    MIP414

    Abstract: MIP414MD
    Text: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4140MD O-220IPD7-A2 MIP414MD MMIP811/812 MMIP814/815/816 MIP82£ MIP55£ MIP414 MIP414MD

    MIP417MD

    Abstract: TO-220IPD7-A2 mip41 MIP16
    Text: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4170MD O-220IPD7-A2 MIP417MD MIP811/812 MIP814/815/816 MIP82£ MIP55£ MIP417MD TO-220IPD7-A2 mip41 MIP16

    MIP417MD

    Abstract: MIP417 mip417m
    Text: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4170MD O-220IPD7-A2 MIP417MD MMIP811/812 MMIP814/815/816 MIP82£ MIP55£ MIP417MD MIP417 mip417m

    MIP414MD

    Abstract: MIP414 MIP4140md
    Text: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4140MD O-220IPD7-A2 MIP414MD MIP811/812 MIP814/815/816 MIP82£ MIP55£ MIP414MD MIP414 MIP4140md

    MIP9E01

    Abstract: MIP9E02 MIP709 ipd mip2 ipd mip4
    Text: Intelligent Power Devices IPDs MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply


    Original     		PDF MIP704 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP709 ipd mip2 ipd mip4

    MIP9E01

    Abstract: MIP9E02 MIP9E ipd mip2 ipd mip4
    Text: Intelligent Power Devices IPDs MIP504 Silicon MOS IC • Features unit: mm ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply


    Original     		PDF MIP504 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP9E ipd mip2 ipd mip4

    MIP9E

    Abstract: MIP2
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP504 Silicon MOS IC • Features unit: mm ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated


    Original     		PDF 2002/95/EC) MIP504 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E MIP2

    mosfet MIP2L4MY

    Abstract: MIP2L40MY MIP2L4My MIP2L
    Text: MIP2L40MY Silicon MOS FET type integrated circuit • Features  Package  Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts  Stabilization of maximum electric power by input correction


    Original     		PDF MIP2L40MY O-220-A2 MIP803/804 MIP52 MIP816/826 MIP55 MIP50 MIP51 mosfet MIP2L4MY MIP2L40MY MIP2L4My MIP2L

    MIP165

    Abstract: MIP164 MIP163 IPD Industrial Products MIP9E01 MIP2
    Text: Intelligent Power Devices IPDs MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)


    Original     		PDF MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP165 MIP164 MIP163 IPD Industrial Products MIP9E01 MIP2

    mip2l3

    Abstract: mip2e 1/mip2l3 MIP2L30MS
    Text: MIP2L30MS Silicon MOS FET type integrated circuit • Features  Package  Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts  Stabilization of maximum electric power by input correction


    Original     		PDF MIP2L30MS MIP803/804 MIP52 MIP816/826 MIP55 MIP50 MIP51 mip2l3 mip2e 1/mip2l3 MIP2L30MS

    MIP9E01

    Abstract: MIP9E02 MIP805 MIP709
    Text: Intelligent Power Devices IPDs MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device • Five protective functions (over-current, over-voltage, load-shorting, over heat, ESD) built-in


    Original     		PDF MIP705 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP709

    MIP9E01

    Abstract: MIP0122SY MIP9E02 TO-220-A1 MIP0123SY MIP0125SY MIP816 MIP0123 matsua CHARGER ipd mip2
    Text: Intelligent Power Devices IPDs MIP0122SY, MIP0123SY, MIP0124SY, MIP0125SY Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.


    Original     		PDF MIP0122SY, MIP0123SY, MIP0124SY, MIP0125SY MIP0122SY MIP0123SY MIP0124SY MIP0125SY MIP10£ MIP811/812 MIP9E01 MIP9E02 TO-220-A1 MIP816 MIP0123 matsua CHARGER ipd mip2

    MIP554

    Abstract: ICL300 MIP5540MS icl 555
    Text: MIP5540MS Silicon MOS FET type integrated circuit • Features  Package  It corresponds to the output for 10 W.  Typical LED peak current : 1.0 A  On resistance can be decreased to 3.7 Ω by adjusting the breakdown voltage to 400 V.  The stability operation that suppresses the flicker in the triac light dimmer is possible.


    Original     		PDF MIP5540MS O-220IPD7-A2 MIP554 MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP56* MIP554 ICL300 MIP5540MS icl 555

    mip0210

    Abstract: MIP0210SY MIP9E MIP2 mip021
    Text: Intelligent Power Devices IPDs MIP0210SY Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.


    Original     		PDF MIP0210SY MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 mip0210 MIP0210SY MIP9E MIP2 mip021

    mip0210

    Abstract: MIP9E01 mip2 japan MIP2 MIP0210SP
    Text: Intelligent Power Devices IPDs MIP0210SP Silicon MOS IC • Features unit: mm ■ Applications 7 3 6 4 5 ● Switching power supply (to 7W) ● AC adaptor ● Battery charger 6.3±0.2 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo


    Original     		PDF MIP0210SP MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 mip0210 MIP9E01 mip2 japan MIP2 MIP0210SP

    MIP9E01

    Abstract: MIP9E02
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device


    Original     		PDF 2002/95/EC) MIP705 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02

    MIP9E01

    Abstract: MIP9E02 MIP816 ipd mip2 ipd mip4
    Text: MIP153 Intelligent Power Devices IPDs MIP153 Silicon MOS IC • Features 10.5±0.5 ● 9.5±0.2 Unit : mm 4.5±0.2 2.8±0.2 1.5 Worldwide input (85 to 274VAC) possible ● Over-voltage protection at secondary section, pulse by pulse over- 6.7±0.3 ● 15.4±0.3


    Original     		PDF MIP153 274VAC) MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP816 ipd mip2 ipd mip4