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    Infineon Technologies AG IPD082N10N3GATMA1

    MOSFET N-CH 100V 80A TO252-3
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    DigiKey IPD082N10N3GATMA1 Cut Tape 26,121 1
    • 1 $2.43
    • 10 $1.563
    • 100 $2.43
    • 1000 $0.78981
    • 10000 $0.78981
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    IPD082N10N3GATMA1 Digi-Reel 26,121 1
    • 1 $2.43
    • 10 $1.563
    • 100 $2.43
    • 1000 $0.78981
    • 10000 $0.78981
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    IPD082N10N3GATMA1 Reel 22,500 2,500
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    Avnet Americas IPD082N10N3GATMA1 Reel 2,500 16 Weeks 2,500
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    Arrow Electronics IPD082N10N3GATMA1 10,000 16 Weeks 2,500
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    • 10000 $0.6956
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    IPD082N10N3GATMA1 2,500 16 Weeks 2,500
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    IPD082N10N3GATMA1 Cut Strips 76 16 Weeks 1
    • 1 $0.8332
    • 10 $0.7604
    • 100 $0.7518
    • 1000 $0.7518
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    Newark IPD082N10N3GATMA1 Cut Tape 2,408 1
    • 1 $0.701
    • 10 $0.701
    • 100 $0.701
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    • 10000 $0.701
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    Rochester Electronics IPD082N10N3GATMA1 42,657 1
    • 1 $0.7947
    • 10 $0.7947
    • 100 $0.747
    • 1000 $0.6755
    • 10000 $0.6755
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    TME IPD082N10N3GATMA1 1
    • 1 $1.82
    • 10 $1.42
    • 100 $1.12
    • 1000 $1.11
    • 10000 $1.11
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    Chip One Stop IPD082N10N3GATMA1 Cut Tape 4,800
    • 1 $0.777
    • 10 $0.775
    • 100 $0.769
    • 1000 $0.766
    • 10000 $0.766
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    EBV Elektronik IPD082N10N3GATMA1 52,500 17 Weeks 2,500
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    New Advantage Corporation IPD082N10N3GATMA1 42,500 1
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    • 10000 $0.9129
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    Win Source Electronics IPD082N10N3GATMA1 47,374
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    • 100 $1.1578
    • 1000 $0.7719
    • 10000 $0.7719
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    Infineon Technologies AG IPD050N10N5ATMA1

    MOSFET N-CH 100V 80A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD050N10N5ATMA1 Reel 5,000 2,500
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    • 10000 $0.90238
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    Avnet Americas IPD050N10N5ATMA1 Reel 32,500 20 Weeks 2,500
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    • 10000 $0.85686
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    Rochester Electronics IPD050N10N5ATMA1 642 1
    • 1 $1
    • 10 $1
    • 100 $0.94
    • 1000 $0.85
    • 10000 $0.85
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    EBV Elektronik IPD050N10N5ATMA1 21 Weeks 2,500
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    UMW IPD068P03L3G

    MOSFET P-CH 30V 70A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD068P03L3G Reel 2,500 2,500
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    • 10000 $0.32382
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    IPD068P03L3G Digi-Reel 2,500 1
    • 1 $1.05
    • 10 $0.705
    • 100 $1.05
    • 1000 $0.3589
    • 10000 $0.3589
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    IPD068P03L3G Cut Tape 2,500 1
    • 1 $1.05
    • 10 $0.705
    • 100 $1.05
    • 1000 $0.3589
    • 10000 $0.3589
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    UMW IPD082N10N3G

    MOSFET N-CH 100V 80A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD082N10N3G Reel 2,500 2,500
    • 1 -
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    • 10000 $0.7
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    IPD082N10N3G Digi-Reel 2,500 1
    • 1 $2.01
    • 10 $1.365
    • 100 $2.01
    • 1000 $0.73827
    • 10000 $0.73827
    Buy Now
    IPD082N10N3G Cut Tape 2,500 1
    • 1 $2.01
    • 10 $1.365
    • 100 $2.01
    • 1000 $0.73827
    • 10000 $0.73827
    Buy Now

    Infineon Technologies AG IPD047N03LF2SATMA1

    MOSFET N-CH 30V 71A TO-252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD047N03LF2SATMA1 Cut Tape 2,000 1
    • 1 $1.24
    • 10 $0.781
    • 100 $1.24
    • 1000 $0.36452
    • 10000 $0.36452
    Buy Now
    IPD047N03LF2SATMA1 Digi-Reel 2,000 1
    • 1 $1.24
    • 10 $0.781
    • 100 $1.24
    • 1000 $0.36452
    • 10000 $0.36452
    Buy Now
    IPD047N03LF2SATMA1 Reel 2,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.283
    Buy Now
    Mouser Electronics IPD047N03LF2SATMA1 3,977
    • 1 $0.85
    • 10 $0.754
    • 100 $0.514
    • 1000 $0.365
    • 10000 $0.297
    Buy Now

    IPD0 Datasheets (139)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPD025N06N Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 26A TO252-3 Original PDF
    IPD025N06NATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 26A TO252-3 Original PDF
    IPD031N03L G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (on) (max) (@4.5V): 4.4 mOhm; ID (max): 90.0 A; Original PDF
    IPD031N03LGATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 90A TO252-3 Original PDF
    IPD031N03LGBTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 90A TO252-3 Original PDF
    IPD031N03M G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (on) (max) (@4.5V): 3.8 mOhm; ID (max): 90.0 A; Original PDF
    IPD031N06L3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (on) (max) (@4.5V): 5.2 mOhm; ID (max): 100.0 A; Original PDF
    IPD031N06L3GATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 100A TO252-3 Original PDF
    IPD033N06NATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 90A TO252-3 Original PDF
    IPD034N06N3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; Original PDF
    IPD034N06N3GATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 100A TO252-3 Original PDF
    IPD035N06L3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.5 mOhm; RDS (on) (max) (@4.5V): 5.5 mOhm; ID (max): 90.0 A; Original PDF
    IPD035N06L3GATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 90A TO252-3 Original PDF
    IPD036N04L G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.6 mOhm; RDS (on) (max) (@4.5V): 4.9 mOhm; ID (max): 90.0 A; Original PDF
    IPD036N04LGATMA1 Infineon Technologies MOSFET N-CH 40V 90A TO252-31 Original PDF
    IPD036N04LGBTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 90A TO252-3 Original PDF
    IPD038N04N G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.8 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 90.0 A; Original PDF
    IPD038N04NGBTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 90A TO252-3 Original PDF
    IPD038N06N3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.8 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 90.0 A; Original PDF
    IPD038N06N3GATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 90A TO252-3 Original PDF
    ...

    IPD0 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    04N03LA

    Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
    Text: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level


    Original
    IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04N03LA 04n03l smd marking D50 P-TO251-3-1 P-TO252-3-11 smd diode marking c3 PDF

    05N03LA

    Abstract: 05n03 fet to251 marking CODE R SMD DIODE IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03L
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original
    IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03 fet to251 marking CODE R SMD DIODE P-TO252-3-11 05N03L PDF

    09n03lb

    Abstract: 09N03 09N03L TRANSISTOR SMD MARKING CODE 42 IPD09N03LB PG-TO252-3-11 IPD09N03LBG
    Text: OptiMOS 2 Power-Transistor IPD09N03LB G IPS09N03LB G IPU09N03LB G IPF09N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level


    Original
    IPD09N03LB IPU09N03LB IPS09N03LB IPF09N03LB PG-TO252-3-11 PG-TO251-3-11 09n03lb 09N03 09N03L TRANSISTOR SMD MARKING CODE 42 PG-TO252-3-11 IPD09N03LBG PDF

    060N03L

    Abstract: IPD060N03L IPD060N03 IPD060N03L G IPS060N03L G IPU060N03L G IEC61249-2-21 IPU060N03L 060n03 3 pin FET smd 2300
    Text: Type OptiMOS 3 Power-Transistor IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 6 mΩ ID 50 A • Qualified according to JEDEC1) for target applications


    Original
    IPD060N03L IPF060N03L IPS060N03L IPU060N03L IEC61249-2-21 PG-TO252-3 060N03L IPD060N03 IPD060N03L G IPS060N03L G IPU060N03L G IEC61249-2-21 060n03 3 pin FET smd 2300 PDF

    04n03l

    Abstract: TO252-3 IPD04N03LB PG-TO252-3-11 PG-TO252 IPU04N03LB
    Text: OptiMOS 2 Power-Transistor IPD04N03LB G IPS04N03LB G IPU04N03LB G IPF04N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.1 mΩ ID 50 A • N-channel, logic level


    Original
    IPD04N03LB IPU04N03LB IPS04N03LB IPF04N03LB PG-TO252-3-11 PG-TO251-3-11 04n03l TO252-3 PG-TO252-3-11 PG-TO252 PDF

    053N08N

    Abstract: IPD053N08N3 IPD053N08N3 G JESD22 d90a
    Text: IPD053N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 5.3 mΩ ID 90 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    IPD053N08N3 IPD06CN08N PG-TO252-3 053N08N 053N08N IPD053N08N3 G JESD22 d90a PDF

    04N03LA

    Abstract: Q67042-S4177 IPD04N03LA P-TO252-3-11
    Text: IPD04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 3.8 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)


    Original
    IPD04N03LA P-TO252-3-11 Q67042-S4177 04N03LA 04N03LA Q67042-S4177 IPD04N03LA P-TO252-3-11 PDF

    09N03

    Abstract: S4264 09n03lb IPD09N03LB JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4264
    Text: IPD09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPD09N03LB PG-TO252-3-11 Q67042-S4264 09N03LB 09N03 S4264 09n03lb JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4264 PDF

    IPD06N03LA

    Abstract: No abstract text available
    Text: IPD06N03LA Preliminary data OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  n-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Low On-Resistance RDS(on) VDS 25 V RDS(on) 5.7 m ID 50


    Original
    IPD06N03LA Q67042-S4149 06N03LA IPD06N03LA PDF

    Untitled

    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ ID


    Original
    IPD06N03LA IPS06N03LA IPF06N03LA IPU06N03LA IPD06N03LA IPF06N03LA IPS06N03LA IPU06N03LA P-TO252-3-11 P-TO252-3-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Type IPD05N03LB G OptiMOS 2 Power-Transistor IPS05N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.8 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPD05N03LB IPS05N03LB PG-TO252-3-11 PG-TO251-3-11 05N03LB PDF

    050N03L

    Abstract: No abstract text available
    Text: Type OptiMOS 3 Power-Transistor IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5 mΩ ID 50 A 1) • Qualified according to JEDEC for target applications


    Original
    IPD050N03L IPS050N03L IPF050N03L IPU050N03L PG-TO252-3-11 050N03L 050N03L PDF

    040N03L

    Abstract: 040N03
    Text: IPD040N03L G Type IPS040N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 4 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications


    Original
    IPD040N03L IPS040N03L PG-TO252-3-11 040N03L PG-TO251-3-11 040N03L 040N03 PDF

    090n03l

    Abstract: IPU090N03LG IPU090N03L G
    Text: Type OptiMOS 3 Power-Transistor IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 9 mΩ ID 40 A 1) • Qualified according to JEDEC for target applications


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    IPD090N03L IPS090N03L IPF090N03L IPU090N03L PG-TO252-3 090N03L 090n03l IPU090N03LG IPU090N03L G PDF

    050N03L

    Abstract: PG-TO251-3-21 PG-TO251-3-11 PG-TO252-3-11 IPD050N03L G PG-TO251 IPU050N03L
    Text: Type OptiMOS 3 Power-Transistor IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5 mΩ ID 50 A 1) • Qualified according to JEDEC for target applications


    Original
    IPD050N03L IPS050N03L IPF050N03L IPU050N03L PG-TO252-3-11 050N03L 050N03L PG-TO251-3-21 PG-TO251-3-11 IPD050N03L G PG-TO251 PDF

    040N03L

    Abstract: 040N03
    Text: IPD040N03L G Type IPS040N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 4 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications


    Original
    IPD040N03L IPS040N03L PG-TO252-3-11 040N03L PG-TO251-3-11 040N03L 040N03 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPD03N03LA G OptiMOS 2 Power-Transistor IPS03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level


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    IPD03N03LA IPS03N03LA PG-TO252-3-11 Q67042-S4249 03N03LA PG-TO251-3-11 Q67042-S4253 PDF

    040N03L

    Abstract: 040N03
    Text: IPD040N03L G Type IPS040N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 4 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications


    Original
    IPD040N03L IPS040N03L PG-TO252-3-11 040N03L PG-TO251-3-11 040N03L 040N03 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPD03N03LA G OptiMOS 2 Power-Transistor IPS03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level


    Original
    IPD03N03LA IPS03N03LA PG-TO252-3-11 Q67042-S4249 03N03LA PG-TO251-3-11 Q67042-S4253 PDF

    050N03L

    Abstract: No abstract text available
    Text: Type OptiMOS 3 Power-Transistor IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5 mΩ ID 50 A 1) • Qualified according to JEDEC for target applications


    Original
    IPD050N03L IPS050N03L IPF050N03L IPU050N03L PG-TO252-3-11 050N03L 050N03L PDF

    05N03LB

    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor IPD05N03LB G IPS05N03LB G IPU05N03LB G IPF05N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.8 mΩ ID 90 A • N-channel, logic level


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    IPD05N03LB IPU05N03LB IPS05N03LB IPF05N03LB PG-TO252-3-11 Q67042-S4262 05N03LB PDF

    marking code br 39 SMD

    Abstract: smd marking code 321 05n03la
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ


    Original
    IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA marking code br 39 SMD smd marking code 321 05n03la PDF

    IPD06N03LA

    Abstract: No abstract text available
    Text: IPD06N03LA IPU06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 5.7 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)


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    IPD06N03LA IPU06N03LA P-TO252-3-11 P-TO251-3-21 P-TO252-3-11 Q67042-S4149 Q67042-S4145 PDF

    04n03

    Abstract: 04N03LA
    Text: OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ


    Original
    IPD04N03LA IPS04N03LA IPF04N03LA IPU04N03LA PG-TO252-3-11 Q67042-S4276 04n03 04N03LA PDF