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    NL1031

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 8 8 3 0 L 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Ram bus DRAM RD R A M ™ is an extremely-high-speed C M O S DRAM organized as 1M w ords by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Ram bus Signaling


    OCR Scan     		IPD48830L P32G6-65A NL1031 PDF

    NEC RDRAM

    Abstract: R135 ATA121 LN370 IEU-1401 REF05
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK D escription The 8-M egabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 1M w ords by 8 bits and capable o f bursting up to 256 bytes o f data at 2 ns per byte. The use of Rambus Signaling


    OCR Scan     		P32G6- NEC RDRAM R135 ATA121 LN370 IEU-1401 REF05 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 1M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling Logic (RSL)


    OCR Scan     		b45752S 0Gb411S PDF