IPD70N03S4L-04 Search Results
IPD70N03S4L-04 Price and Stock
Infineon Technologies AG IPD70N03S4L04ATMA1MOSFET N-CH 30V 70A TO252-3 |
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IPD70N03S4L04ATMA1 | Cut Tape | 3,793 | 1 |
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IPD70N03S4L04ATMA1 | Reel | 12 Weeks | 2,500 |
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IPD70N03S4L04ATMA1 | 13,275 |
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IPD70N03S4L04ATMA1 | 2,500 | 2,500 |
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IPD70N03S4L04ATMA1 | 2,500 | 12 Weeks | 2,500 |
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IPD70N03S4L04ATMA1 | 414 | 1 |
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IPD70N03S4L04ATMA1 | Cut Tape | 2,488 |
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IPD70N03S4L04ATMA1 | 13 Weeks | 2,500 |
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Infineon Technologies AG IPD70N03S4L-04MOSFETs N-Ch 30V 70A DPAK-2 OptiMOS-T2 |
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IPD70N03S4L-04 | 9,573 |
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IPD70N03S4L-04 | 3 |
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Infineon Technologies AG IPD70N03S4L04OPTIMOS-T2 POWER-TRANSISTOR Power Field-Effect Transistor, 70A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD70N03S4L04 | 28 |
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IPD70N03S4L-04 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPD70N03S4L-04 |
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Single: N-Channel 30V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS -T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.3 mOhm; ID (max): 70.0 A; RthJC (max): 2.2 K/W; | Original | |||
IPD70N03S4L04ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 70A TO252-3 | Original |