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Text: 10150BD Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 150u Peak Curr. Tol. Total Cap. (F)1.0p Ip/Iv Min Vp540 Vv Fwd Volt @Ipeak100m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)7.0 Neg Resist. Semiconductor MaterialGermanium
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10150BD
Vp540
Ipeak100m
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Abstract: No abstract text available
Text: A1E507E Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 475u Peak Curr. Tol.75u Total Cap. (F)700f Ip/Iv Min6.7 Vp480m Vv Fwd Volt @Ipeak100m Resist. Cutoff Freq Series Induct. (H)100p R(series) (Ohms)15 Neg Resist. Semiconductor MaterialGermanium
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A1E507E
Vp480m
Ipeak100m
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Abstract: No abstract text available
Text: 10400BD Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 500u Peak Curr. Tol. Total Cap. (F).70p Ip/Iv Min Vp560 Vv Fwd Volt @Ipeak100m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)6.0 Neg Resist. Semiconductor MaterialGermanium
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10400BD
Vp560
Ipeak100m
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Abstract: No abstract text available
Text: 10250BD Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 250u Peak Curr. Tol. Total Cap. (F)1.0p Ip/Iv Min Vp550 Vv Fwd Volt @Ipeak100m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)6.0 Neg Resist. Semiconductor MaterialGermanium
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10250BD
Vp550
Ipeak100m
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Abstract: No abstract text available
Text: 10350BD Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 350u Peak Curr. Tol. Total Cap. (F)1.0p Ip/Iv Min Vp550 Vv Fwd Volt @Ipeak100m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)6.0 Neg Resist. Semiconductor MaterialGermanium
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10350BD
Vp550
Ipeak100m
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