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    IPI120N06S4-H1 Search Results

    IPI120N06S4-H1 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPI120N06S4-H1 Infineon Technologies Single: N-Channel 60V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; RthJC (max): 0.6 K/W; Original PDF
    IPI120N06S4H1AKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO262-3 Original PDF
    IPI120N06S4H1AKSA2 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO262-3 Original PDF