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028N08N Abstract: IPP02CN08N IPP028N08N3 JESD22 PG-TO220-3 Text: IPP028N08N3 G IPI028N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 2.8 mΩ ID 100 A • Very low on-resistance R DS(on) previous engineering	Original	IPP028N08N3 IPI028N08N3 IPP02CN08N PG-TO220-3 PG-TO262-3 028N08N 028N08N IPP02CN08N JESD22 PG-TO220-3	PDF

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028N08N

Abstract: IPP02CN08N IPP028N08N3 JESD22 PG-TO220-3
Text: IPP028N08N3 G IPI028N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 2.8 mΩ ID 100 A • Very low on-resistance R DS(on) previous engineering

Original

IPP028N08N3 IPI028N08N3 IPP02CN08N PG-TO220-3 PG-TO262-3 028N08N 028N08N IPP02CN08N JESD22 PG-TO220-3

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