Untitled
Abstract: No abstract text available
Text: P D - 9 .1 5 3 8 B International l R Rectifier IRL6903 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description
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IRL6903
-105AÂ
485S4S2
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Untitled
Abstract: No abstract text available
Text: P D -9 .1 4 7 9 International TSR Rectifier IRF6215 PRELIMINARY HEXFET Power M OSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Voss = -150V R DS on =
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IRF6215
-150V
O-220
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Untitled
Abstract: No abstract text available
Text: International [^Rectifier PD 9.1278B IRF1010N PRELIMINARY HEXFET Power M O S F E T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Vdss - 55V ^ D S o n = 0.012Q lD = 72A
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1278B
IRF1010N
GQ23B5Q
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IRF3710
Abstract: No abstract text available
Text: PD 9.1309B International IGR Rectifier IRF3710 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V q s s = 100V ^D S o n = Description
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1309B
IRF3710
IRF3710
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