0-1740554-8
Abstract: it829
Text: 6 7 THIS DRAWING IS UNPUBLISHED. RELEASED V ER TR A U LIC H E UN VER O EFFEN TLICHTE ZEICHNUNG FREI FUER VEROEFFENTLICHUNG COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. 5 3 2 FOR PUBLICATION LOC ALL INTERNATIONAL RIGHTS RESERVED. DIST R E V IS IO N S AENDERUNGEN
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04MAY09
0-1740554-8
it829
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Untitled
Abstract: No abstract text available
Text: 82078 44 PIN 11.0 D.C. SPECIFICATIONS 11.1 Absolute Maximum Ratings NOTICE: This is a production data sheet. The specifi cations are subject to change without notice. * WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage.
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82078SL
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irf4321
Abstract: 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433
Text: A4 FAIRCHILD SEMICONDUCTOR IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD mamm am mam i DE J 341T a7 M O D E T i n 1 h A Schlumberger Company Power And Discrete Division Description T-39-11 TO-204AA TO-22QAB
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IRF430-433/IRF830-833
MTM/MTP4N45/4N50
T-39-11
O-204AA
O-22QAB
IRF430
IRF431
IRF432
IRF433
MTM4N45
irf4321
4N50
MTM4N50
IRF830
MTP4N50
irf4304
IRF432
IRF430
IRF431
IRF433
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cdi schematics pcb
Abstract: IT28 it27 ac cdi schematic diagram cdi schematic cdi schematics F2152 I960 RF2152
Text: RF RF2152 Preliminary M ICRO-DEVICES POWER AMPLIFIERS DU AL-M O D E CD M A /A M PS OR TD M A /A M P S 3 V POWER A M P L IF IE R manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in dual-mode
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RF2152
RF2152
800MHz
950MHz
PSSOP-16
-TW30PAE
25PAE
85PAE
-T-30Gan
25Gan
cdi schematics pcb
IT28
it27
ac cdi schematic diagram
cdi schematic
cdi schematics
F2152
I960
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ir4233
Abstract: ir307p ltl42 5mm LTL-4203 C307P 4213 LTL-421
Text: LITE-ON INC 31E » SS3t>3b7 0002053 fl ILTNI T-13/4 5mm SOLID STATE LAMPS LTL-4203 LTL-4213/307P LTL-4223/307E RED . LTL-4233/307G G REEN BRIG H T RED LTL-4253/307Y YELLO W HIGH E F F IC IE N C Y RED LTL-4294/307EA ORANGE FEATURES • LOW POWER CONSUMPTION.
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0GG5D53
LTL-4203
LTL-4233/307G
LTL-4213/307P
LTL-4253/307Y
LTL-4223/307E
LTL-4294/307EA
ir4233
ir307p
ltl42 5mm
C307P
4213
LTL-421
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Untitled
Abstract: No abstract text available
Text: 10 12 13 LOOSE PIECE M ATE R IA L NUMBER 90170014. 90170037 90170047 90170007 90170031 90170008 90170032 90170001 90170023 90170005 9017002 90170018 90170043 901 70019 90170044 ' ’ ' ' ’ ' TAPE MOUNTED ENGINEERING NUMBER A A -2 1 4 0 BB -2141 C -214 3
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SD-19017-003
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Untitled
Abstract: No abstract text available
Text: • bSLHflET 0017234 «ÎSfl ■ MITSUBISHI RF POWER MODULE M57776 889-915MHz, 8V, 300mW, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM —@ 1— @ Dim ensions in mm < w i-j> ii-[i © © © © © i i 77777)7777777777777 PIN : ©Pin : RF INPUT V c c i : 1st. DC SUPPLY
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M57776
889-915MHz,
300mW,
DD17237
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tl620
Abstract: cl1100
Text: RF RF2152 MICRO DEVICES DUAL-MODE CDMA/AMPS 3 V POWER A M PLIFIER T y p ic a l A p p lic a tio n s Spread Spectrum Systems • 3 V JCDMA/TACS Cellular Handsets CDPD Portable Data Cards • 3V TDMA/AMPS Cellular Handsets Portable Battery-Powered Equipment POWER AMPLIFIERS
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RF2152
RF2152
800MHz
ufc27
tl620
cl1100
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4N50
Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB
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34tclt
0e7117
IRF430-433/IRF830-833
MTM/MTP4N45/4N50
t-39-11
O-22QAB
IRF430
IRF431
IRF432
IRF433
4N50
IRF830
irf4321
MTP4N45
IRF430
IRF 5054
MTP4N50
MTM4N50
MK48Z02B-20
IRF431
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91911
Abstract: No abstract text available
Text: WORLDWIDE REPRESENTATIVES ARGENTINA Marcotegui & Co. M igueletes 1644, 1426 Buenos Aires Tel. 54-11-4786 -40 83/Fax 54-11-47845370 E-mail: emyco@ ciudad.com.ar AUSTRALIA Koloona Industries Pty Ltd 2/17 Pembury Rd, PO Box 184 Minto Retail, NSW 2566 Tel. 61-2-9820-5233/F ax 61-2-9820524 4
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83/Fax
30-1-213-74502/F
91911
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74LS125AP
Abstract: M74LS125AP
Text: MITSUBISHI LSTTLs M74LS125AP QUADRUPLE BUS BUFFER GATE W IT H 3-S T A T E O UTPU T DESCRIPTION The M 7 4L S 12 5A P PIN CONFIGURATION TOP VIEW is a semiconductor integrated circuit containing 4 buffers w ith 3-state outputs and is provided w ith an ou tp ut control input OC which is independent fo r
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M74LS125AP
b2LHfl27
0013Sbl
14-PIN
16-PIN
20-PIN
74LS125AP
M74LS125AP
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3 phase AC servo drive schematic
Abstract: schematic diagram 3 phase ac drive 3 phase pwm signal generator ic for ac inverter pwm inverter circuit current sensing DC motor schematic diagram motor control inverter schematic diagram microcontroller based PWM inverters schematic diagram ac to ac inverter IR2171 basic circuit diagram of AC servo motor
Text: NEW MONOLITHIC HIGH VOLTAGE CURRENT SENSING IC SIMPLIFIES AC DRIVE INTEGRATION As power electronic technology evolves, the AC PWM inverter drive becomes more efficient, more compact, more advanced in performance, and less expensive. This tendency has been further accelerated in the small horsepower AC drives, particularly
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HCPL4506
IR2171
IR2171
3 phase AC servo drive schematic
schematic diagram 3 phase ac drive
3 phase pwm signal generator ic for ac inverter
pwm inverter circuit
current sensing DC motor schematic diagram
motor control inverter schematic diagram
microcontroller based PWM inverters
schematic diagram ac to ac inverter
basic circuit diagram of AC servo motor
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Untitled
Abstract: No abstract text available
Text: A p p l ic a t io n N im otes A V A I L A B L E AN9 • AN18 • AN31 • AN37 • AN40 X25040 4K 5 1 2 x 8 Bit SPI Serial E2PROM With BLOCK LOCK PROTECTION FEATURES DESCRIPTION • 1MHz Clock Rate • SPI Modes 0,0 & 1,1 • 5 1 2 X 8 Bits — 4 Byte Page Mode
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X25040
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Untitled
Abstract: No abstract text available
Text: M m o to r o la Military 10H576 Hex “D” Master-Slave Flip-Flop ELECTRICALLY TESTED PER: S962-8751201 MPO mini T h e 10 H 5 7 6 co n ta in s six m a ste r slave typ e “ D” flip -flo p s w ith a co m m on clock. T h is M E C L 10H p art is a fu n ctio n a l/p in o u t dup licatio n o f th e s ta n
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10H576
S962-8751201
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HA-5082
Abstract: ha5082
Text: HARRIS HA-5082 Series Preliminary JFET Input Dual Operational Amplifiers DESCRIPTION • H IG H IN P U T I M P E D A N C E 1 0 '2 n • L O W IN P U T B I A S C U R R E N T 200pA • L O W IN P U T O F F S E T C U R R E N T 1 00 pA • L O W P O W E R C O N S U M P T IO N
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200pA
HA-5082
100pF,
100pF
100ns/Div.
500ns/Div.
ha5082
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Diode LT 213
Abstract: No abstract text available
Text: TAIW AN LIT ON E L E C T R O N I C L I T E W ? 41E D • flöBSb^S O Q O B M b S 43^ « T L I T LTl,-203 RED LTL-233 GREEN LtL-213 BRIGHT RED ; VLTL-223 m m 1FFR3ÏENCY R | ¡ V t W ' Ì P W I ^ -1 ' : r - v m ^ L \ FEATURES • LOW POWER CONSUMPTION. • HIGH EFFIC IE N C Y.
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LTL-233
LtL-213
VLTL-223
Diode LT 213
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PDF
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IR2110 amplifier circuit diagram class D
Abstract: 3 phase inverter ic ir2136 IR2104 APPLICATION NOTE IR2104 SCHEMATIC 10kw inverter Class d SCHEMATIC 10kw POWER SUPPLY WITH IGBTS ir2110 class d amp 3 phase AC servo drive schematic 3 phase scr firing circuit for dc servo driver IR2109 application note 3 phase bridge scr drive circuit diagram
Text: POWER CONVERSION PROCESSOR TM ARCHITECTURE AND HVIC PRODUCTS FOR MOTOR DRIVE IR’s Motor Drive IC family supports the emerging Power Conversion Processor TM Architecture and delivers new level of ruggedness, compact size and lower EMI. Monolithic integration of high voltage circuits for gate driving with protection, soft
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1200Vps
IR2110 amplifier circuit diagram class D
3 phase inverter ic ir2136
IR2104 APPLICATION NOTE
IR2104 SCHEMATIC 10kw inverter Class d
SCHEMATIC 10kw POWER SUPPLY WITH IGBTS
ir2110 class d amp
3 phase AC servo drive schematic
3 phase scr firing circuit for dc servo driver
IR2109 application note
3 phase bridge scr drive circuit diagram
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI ICS AV COMMON M52390FP NTSC/PAL ENCODER DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M52390FP is a single-chip semiconductor integrated circuit which has a function to convert FVG/B signal to NTSC/PAL composite video signal and the superimpose function.
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M52390FP
M52390FP
71VP-P
E1E11
D02122G
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PDF
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Untitled
Abstract: No abstract text available
Text: A N A LO G D E V IC E S Quad Picoampere Input Current Bipolar Op Amp AD704 FEATURES HIGH DC PRECISION 75 fiV max Offset Voltage 1 iV/°C max Offset Voltage Drift 150 pA max Input Bias Current 0.2 pA/°C typical lB Drift CONNECTION DIAGRAMS 14-Pin Plastic DIP (N
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AD704
14-Pin
16-Pin
MIL-STD-883B
EIA-481A
AD705,
AD706
AD704JN
AD704JR
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PDF
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ARM966E-S
Abstract: IEEE1284 WIN32 XC9572 multi-ice interface unit
Text: Multi-ICE Version 2.2 TAPOp API Reference Guide Copyright 1998-2002 ARM Limited. All rights reserved. ARM DUI 0154B Multi-ICE TAPOp API Reference Guide Copyright © 1998-2002 ARM® Limited. All rights reserved. Release Information The following changes have been made to this document.
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0154B
int16
int32
unsigned16
unsigned32
40-bit
32-bit
32-bit
ARM966E-S
IEEE1284
WIN32
XC9572
multi-ice interface unit
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PDF
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Texas Instruments TTL 7432
Abstract: specifications of IC 7432 supply voltage
Text: SN5432, SN54LS32, SN54S32, SN7432, SN74LS32, SN74S32 QUADRUPLE 2 INPUT POSITIVE OR GATES DE C EM B ER 1 9 8 3 - R E V IS E D M A R C H 1988 Package Options Include Plastic "Small Outline" Packages, Ceramic Chip Carriers and Flat Packages, and Plastic and Ceramic
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SN5432,
SN54LS32,
SN54S32,
SN7432,
SN74LS32,
SN74S32
SN54LS32
SN54S32
Texas Instruments TTL 7432
specifications of IC 7432 supply voltage
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PDF
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CECL
Abstract: cecl 08
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 8 0 3 0 /0 4 0 P E C L -T TL C lo c k D river M C10H 642 M C100H642 The MC10H/100H642 generates the necessary clocks for the 68030, 68040 and similar microprocessors. It is guaranteed to meet the clock specifications required by the 68030 and 68040 in terms of part-to-part
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MC10H/100H642
50MHz
10/100H
DL122
MC10H642
MC100H642
CECL
cecl 08
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PDF
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Untitled
Abstract: No abstract text available
Text: IL352 Phototransistor Optocoupler FEATURES • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO=30 V • Low Saturation Voltage • Fast Switching Times • Field-Effect Stable by TRIOS*
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IL352
1-888-lnfineon
IL352
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM531622C 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit Mask ROM DESCRIPTION The OKI MSM531622C is a high-speed CMOS Mask ROM that can electrically switch between 1,048,576word x 16-bit or 2,097,152-word x 8-bit configurations. The MSM531622C operates on a single 5.0 V power
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MSM531622C
576-Word
16-Bit
152-Word
MSM531622C
576word
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