Untitled
Abstract: No abstract text available
Text: DCM Series is discontinued. 13 1 Fast-Acting ⁄ 3 2 ˝ x 1 ⁄ 2 ˝ 10x38mm Midget Fuses, For supplemental, control circuit applications, see KLM Series, data sheet # 2020 1 For photovoltaic 600Vac/dc, ⁄10–30A applications, see PVM Series, data sheet # 2153
|
Original
|
10x38mm)
600Vac/dc,
0-30A
E19180,
100kA
600Vac
600Vdc
BU-SB091066
|
PDF
|
21531S
Abstract: ir 2153 application 2104S 2101S 2153S IR 2153 IR53HD420-P2 2184S 2113s 2109-4
Text: International Rectifier Lighting IC Navigator Functi on Features Voltage Offset Hi gh Si de B a si c 600 B a si c 600 Independant Hi gh & Low S i de Half-Bri dge 8 Lead D IP 14 Lead D IP 14 Lead D IP w/o Lead 4 16 Lead D IP w/o Leads 4 & 5 IR 2117 FD IR 2118(FD )
|
Original
|
2117S
2118S
2101S
2102S
2106S
2181S
2110S
IR21571
IR21571S
IR2159
21531S
ir 2153 application
2104S
2153S
IR 2153
IR53HD420-P2
2184S
2113s
2109-4
|
PDF
|
5n06
Abstract: 5N05 S-6059 SGSP351 DIODE c335 17611 SEFP5N05 17610 SEFP5N06
Text: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D r - 3 ? -tr : I: I, SEFP5N05 SEFP5N06 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V DSS T h e se p ro d ucts are diffused multi-cell silicon gate N -C h a n n e l e n ha ncem e nt m ode P o w e r-M o s field
|
OCR Scan
|
SEFP5N05
SEFP5N06
0V/60V
20Kfl)
300/is,
SGSP351
100/is
s-6059
C-335
5n06
5N05
DIODE c335
17611
17610
SEFP5N06
|
PDF
|
sgs Thomson Thyristor
Abstract: ICC3-400 thyristor capacitive discharge ignition use ic in capacitor discharge ignition IGNITION THOMSON ICC03-400B2 antiparallel scr 7270 ic capacitive discharge ignition capacitor discharge ignition
Text: £ = T S G S -T H O M S O N ^ 7 # RfflDOMmLKgTTliOlD ! Application Specific Discretes A.S.D. ICC03-400B2 IGNITION CO NTRO L C IR C U IT FEATURES AND BENEFITS • MONOLITHIC CIRCUIT FOR CAPACITANCE DISCHARGE SYSTEM CONTROL ■ DEDICATED THYRISTOR STRUCTURE FOR
|
OCR Scan
|
ICC03-400B2
ICC03
00b7272
sgs Thomson Thyristor
ICC3-400
thyristor capacitive discharge ignition
use ic in capacitor discharge ignition
IGNITION THOMSON
ICC03-400B2
antiparallel scr
7270 ic
capacitive discharge ignition
capacitor discharge ignition
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating
|
OCR Scan
|
EN6007
CPH6701
CPH670I
CPH3106
CPH6701]
|
PDF
|
C3248
Abstract: LR7189 122122
Text: DRAM INS MADE IN THIRD AN9LE PROJECTION T H IS DRAWING IS U N PU BLISH ED . COPYRIGHT 19 R ELEA SED FOR PU BLIC A T IO N OV AMP INCORPORATED. A LL INTERNATIONAL LOC , 19 RIG H TS RESERVED . D I ST R E V IS IO N S 14 LTR ZONE DATE D ESC RIPTIO N REV/REDRWN / 0720-0228-92
|
OCR Scan
|
LR7189
C3248-4872J
J-800-526-5142
MJL-T-10727
C-34864
C3248
LR7189
122122
|
PDF
|
BLB-4215B-YG
Abstract: 94-22VGC
Text: EVERLIGHT ELECTRONICS CO.,LTD. DATA SHEET MODEL NO DATE ：BLB-4215B-YG ：2000/12/1 DEPARTMENT：R&D CENTER REVISION ：1.0 RECEIVED • MASS PRODUCTION □ PRELIMINARY □ CUSTOMER DESIGN DEVICE NUMBER : DEA-880-001 PAGE :3 CUSTOMER DESIGNER REV CHECKER
|
Original
|
BLB-4215B-YG
DEA-880-001
BLB-4215B-YG
94-22VGC
|
PDF
|
8630-01
Abstract: IR 2153 CCFL backlight 96-22VGC BLB-4938J-YG 863001 UDT model 2153 9622vgc
Text: EVERLIGHT ELECTRONICS CO., LTD. LED BACKLIGHT MODEL NO:BLB-4938J-YG Device Number:DEA-863-001 Page:1/4 ECN: •Features: ●High Performance ●Free Design ●Longer Life and Low Power Consumption ●Various Color :Blue,Green,Yellow Green Standard ,Orange,Amber,Red
|
Original
|
BLB-4938J-YG
DEA-863-001
1000hrs
12dies
8630-01
IR 2153
CCFL backlight
96-22VGC
BLB-4938J-YG
863001
UDT model 2153
9622vgc
|
PDF
|
CPH3106
Abstract: CPH6701 TA-1524 marking PA
Text: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Package Dimensions unit:mm 2153 0.15 2.9 5 4 0.6 6 0.2 [CPH6701] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 • Composite type with a PNP transistor and a Schottky
|
Original
|
ENN6007A
CPH6701
CPH6701]
CPH6701
CPH3106
SBS001,
TA-1524
marking PA
|
PDF
|
CPH3106
Abstract: CPH6701 EN6007
Text: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Package Dimensions unit:mm 2153 0.15 2.9 5 4 0.6 6 0.2 [CPH6701] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 • Composite type with a PNP transistor and a Schottky
|
Original
|
EN6007
CPH6701
CPH6701]
CPH6701
CPH3106
SBS001,
EN6007
|
PDF
|
c 879 transistor
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. DATA SHEET MODEL NO DATE ：BLB-10721I-YG ：2001/2/5 DEPARTMENT：R&D CENTER REVISION ：1.0 RECEIVED • MASS PRODUCTION □ PRELIMINARY □ CUSTOMER DESIGN DEVICE NUMBER : DEA-879-001 PAGE :3 CUSTOMER REV DESIGNER CHECKER
|
Original
|
BLB-10721I-YG
DEA-879-001
c 879 transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Panasonic Reflective Photosensors Photo Reflectors ON2153 Reflective Photosensor U nit : mm Mark for indicating LED side • Outline O N 2153 is a p h o to se n so r d etectin g the chan g e o f re fle ctiv e light a in w hich a high efficiency G aA s infrared light em itting diode is used
|
OCR Scan
|
ON2153
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. DATA SHEET MODEL NO DATE ：BLB-7153G-YG ：2000/7/25 DEPARTMENT：R&D CENTER REVISION ：1.1 RECEIVED • MASS PRODUCTION □ PRELIMINARY □ CUSTOMER DESIGN DEVICE NUMBER : DEA-816-001 PAGE :4 CUSTOMER 1.0 REV DESIGNER CHECKER
|
Original
|
BLB-7153G-YG
DEA-816-001
1000hrs
18dies
90dies
|
PDF
|
Reflective photosensor
Abstract: ON2153
Text: Panasonic Reflective Photosensors Photo Reflectors ON2153 Reflective Photosensor • Outline U nit : mm M a rk f o r in d ic a tin g L E D s id e 7.5±0.2 O N 2153 is a p h o to se n so r detecting the change o f re fle ctiv e light cn in w hich a high efficiency G aA s infrared light em itting diode is used
|
OCR Scan
|
ON2153
ON2153
Reflective photosensor
|
PDF
|
|
|
fbt symbol
Abstract: fbt tv samsung fbt sound ic samsung tv circuit diagram Sicma KA2103H television external parts ka2103 5 pin voltage comparator IC
Text: 1984.ll.2i> 7 L I N E A R INTEGRATED C IR CU IT KA2103H MUTE SYSTEM FOR TV 9 Sip T h e K A 2 1 0 3 H is a m o n o l i t h i c i n t e g r a t e d c i r c u i t d e s i g n e d -for n o is e s o u n d m u t i n g in t e l e v i s i o n receiver, . T h i s IC has all f u n c t i o n s i n c l u d i n g h o r i z o n t a l
|
OCR Scan
|
KA2103H
KA2103H
21D3H
fbt symbol
fbt tv
samsung fbt
sound ic
samsung tv circuit diagram
Sicma
television external parts
ka2103
5 pin voltage comparator IC
|
PDF
|
marking PA
Abstract: CPH3106 CPH6701 "marking PA"
Text: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.
|
OCR Scan
|
ENN6007A
CPH6701
CPH6701
CPH3106
SBS001,
CPH6701]
marking PA
"marking PA"
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS50UMH-06 î I HIGH-SPEED SWITCHING USE FS50UMH-06 • 2.5V DRIVE • VDSS .60V • rD S O N (M A X ) . 2 1 m O
|
OCR Scan
|
FS50UMH-06
571Ch12
571Q2
|
PDF
|
str - z 2154
Abstract: sk 5130
Text: Precision Operational Amplifier Features Applications • • • • • • • • • • • High Gain Instrumentation Precision Data Acquisition Precision Integrators Biomedical Amplifiers Precision Threshold Detectors D escription The Harris HA-5130/5135 are precision operational
|
OCR Scan
|
140dB
HA-5130/5135
str - z 2154
sk 5130
|
PDF
|
IrDA Infra Red Integrated Circuits
Abstract: Manchester Products manufacturer 20401 Prairie sigmatel mobile phone parts ACTISYS bayer SIGMATEL IrDA Dow Chemical Company Regal Electronics
Text: VISHAY Vishay Semiconductors Sources for Accessories IrDA Related References Obex Code Infrared Data Association ObexCode provides superior quality IrDA software, like our Embedded IrDA Stack and our middleware products Proxima Server and Beam2Phone. The technological competence spans from protocol stacks
|
Original
|
01-Dec-03
IrDA Infra Red Integrated Circuits
Manchester Products manufacturer 20401 Prairie
sigmatel mobile phone parts
ACTISYS
bayer
SIGMATEL IrDA
Dow Chemical Company
Regal Electronics
|
PDF
|
NPN DARLINGTON POWER module isotop
Abstract: JIS h 3140 pin diagram of ic 1496 schematic diagram UPS ESMT5070DF ESMT5070DV smps&ups
Text: 3QE D H 7^2153? D 03040^1 ESMT5070DF ESMT5070DV SGS-THOMSON M S G NPN THREE STAGE DARLINGTON POWER MODULE S-THOMSON ADVANCE DATA • HIGH C U R R E N T PO W ER BIPOLAR MODULE ■ VE R Y LOW Rm JUNC TIO N CASE ■ SP ECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FR EEW HEELING DIODE
|
OCR Scan
|
ESMT5070DF
ESMT5070DV
ESMT5070DF
T-91-20
O-240)
NPN DARLINGTON POWER module isotop
JIS h 3140
pin diagram of ic 1496
schematic diagram UPS
ESMT5070DV
smps&ups
|
PDF
|
D913
Abstract: UNELCO MICA CAPACITORS VK200
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F150 The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
|
OCR Scan
|
RF150
D913
UNELCO MICA CAPACITORS
VK200
|
PDF
|
irg7ph42upbf
Abstract: marking code 5339
Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
|
Original
|
96233B
IRG7PH42UPbF
IRG7PH42U-EP
O-247AD
marking code 5339
|
PDF
|
IRG7PH42U-EP
Abstract: 124 transistor
Text: PD - 96233 IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
|
Original
|
IRG7PH42UPbF
IRG7PH42U-EP
O-247AD
IRG7PH42U-EP
124 transistor
|
PDF
|
IRG7PH42UPBF
Abstract: IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U
Text: PD - 96233A IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
|
Original
|
6233A
IRG7PH42UPbF
IRG7PH42U-EP
O-247AD
IRG7PH42UPBF
IRG7PH42U-EP
C-150
IGBT 60A 1200V
of igbt 1200V 60A
IRG7PH42U
|
PDF
|
