Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes SOT-323 RB706F-40 Schottky Barrier Diode FEATURES z Small package z Low VF and low IR z High reliability 1 3 2 MAKING: 3J• Maximum Ratings @Ta=25℃ Parameter Symbol Limit
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OT-323
OT-323
RB706F-40
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DIODE 3J
Abstract: RB706F-40
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 RB706F-40 Schottky Diode 1. ANODE 2. CATHODE FEATURES z Small package z Low VF and low IR. z High reliability. 3. C,A MAKING: 3J• Maximum Ratings @TA=25℃ Parameter
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OT-323
OT-323
RB706F-40
DIODE 3J
RB706F-40
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SMALL SIGNAL SCHOTTKY DIODES DO-35
Abstract: ultra low drop, high current diode 1N60P DO-35 silicon Rectifier diodes HALF WAVE RECTIFIER CIRCUITS high speed
Text: DC COMPONENTS CO., LTD. 1N60P RECTIFIER SPECIALISTS R TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY DIODES FEATURES * Metal silicon junction, majority carrier conduction. * High current capability, low forward voltage drop. * * * * * Extremely low reverse current IR
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1N60P
DO-35
DO-35
200mA
SMALL SIGNAL SCHOTTKY DIODES DO-35
ultra low drop, high current diode
1N60P
DO-35 silicon Rectifier diodes
HALF WAVE RECTIFIER CIRCUITS high speed
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Untitled
Abstract: No abstract text available
Text: 1N60 THRU 1N60P SMALLE SIGNAL SCHOTTKY RECTIFIERS DO-35 Metal-on-silicon junction,majority camier conduction High currentcapability,low forward voltage drop • Ultra speed switching characteristics Extremely low reverse current IR Satisfactory wave detecion efficiency
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1N60P
DO-35
DO-35
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ch340s
Abstract: MARKING JW SOT-23 marking 3U 3T 3C diode 3E 3G BAT54BDWD1PT BA5 marking BA6 marking transistor marking lv4 ch740h40 kl3 59 MF sot-23
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR
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Original
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CH025S-40PT
CH43H-30PT
CH035H-20PT
CH035H-30PT
CH035H-40PT
CH015H-40PT
CH015H-50PT
CH015H-60PT
CH157H-70PT
BAT43BPT
ch340s
MARKING JW SOT-23
marking 3U 3T 3C diode 3E 3G
BAT54BDWD1PT
BA5 marking
BA6 marking
transistor marking lv4
ch740h40
kl3 59
MF sot-23
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PDF
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1ss293
Abstract: No abstract text available
Text: 1SS293 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package Maximum Ratings (Ta = 25°°C) Characteristic Symbol
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Original
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1SS293
SC-61
961001EAA2'
1ss293
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PDF
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54S38
Abstract: SN74298 SN74265 54175 NES 1004 naval specification 74L95 Transistor AF 138 07802-1 SN7437 SN54LS195A
Text: m - G EN ER A L IN F O R M A TIO N INDEXES Numerical • Functional/Selection Guide O R D E R IN G INSTRUCTIO NS A N D M E C H A N IC A L D ATA 1 1 5 4/74 F A M IL Y SSI C IR CU ITS 2 I 54/74 F A M IL Y M S I/LSI C IR C U ITS 3 S E R IE S 29000 S S I C IR C U IT S
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38510/M
D012510
D011520
D011510
54S38
SN74298
SN74265
54175
NES 1004 naval specification
74L95
Transistor AF 138
07802-1
SN7437
SN54LS195A
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PDF
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CR02AM
Abstract: F1037 two terminal flasher unit pIC 4020 CD 4020
Text: MITSUBISHI SEMICONDUCTOR THYRISTOR CR02AM LOW POWER USE PLANAR PASSIVATION TYPE OUTLINE DRAWING Dim ensions in mm *5.0 MAX 0 T1 TERMINAL T2 TERMINAL GATE TERMINAL C IR C U M S C R IB E C IR C L E * 0 .7 JEDEC : TO-92 APPLICATION Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher,
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CR02AM
00V/300V/400V
300NCE
66liA
CR02AM
F1037
two terminal flasher unit
pIC 4020
CD 4020
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PDF
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Untitled
Abstract: No abstract text available
Text: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*
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OCR Scan
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QDS4033
F640/641/642/643
F640R
/641R
/642R
/643R
T0-22QAB
IRF640,
IRF641,
IRF642,
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PDF
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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OCR Scan
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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PDF
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LG color tv Circuit Diagram schematics
Abstract: texas ttl YJ 162A Texas Instruments TTL integrated circuits catalog SN74180 AC digital voltmeter using 7107 Sii 9024 MC3123 sn74ls860 SN7490AJ sn74243
Text: IN D EXES Alphanumeric • Functional/Selection Guide IN T E R C H A N G E A B ILIT Y GUIDE G E N E R A L INFORM ATION O RD ERIN G IN STRUCTIO N S AND M ECH A N ICA L D A TA 5 4 /7 4 FA M ILIE S OF CO M PATIBLE T T L C IR C U ITS 54/74 F A M IL Y SSI C IR C U ITS
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OCR Scan
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MIL-M-38510
38510/MACH
3186J
Z501201
Z012510
Z011510
D022110
D022130
D021110
D021130
LG color tv Circuit Diagram schematics
texas ttl
YJ 162A
Texas Instruments TTL integrated circuits catalog SN74180
AC digital voltmeter using 7107
Sii 9024
MC3123
sn74ls860
SN7490AJ
sn74243
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PDF
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SEG NC3
Abstract: NJU6460A
Text: « « co co "N V ir> iz. Sè ir» i □ A n i -F5 -H o HJg •CV i3i3 -c* rffQJf à ff •« S i S f H ’DlP {+ 2 U Ü 5 K j. ÌN 3 IÌ. rs * t r i ,->» § • X . co #rB7fcSïfê co co ■ *a - j g ^ m ia i i 3i 3 4 OC Iff 5 X . I >i - M2 - j - A IO c , LO
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NJUG460A
9IH03
09fr9nm
SEG NC3
NJU6460A
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PDF
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Untitled
Abstract: No abstract text available
Text: HSP3125F3, TISP3I50F3, TISP3180F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS _SLFgOÜ - MARCH ir M - REVISED SEPTEMBER 1994 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
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OCR Scan
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HSP3125F3,
TISP3I50F3,
TISP3180F3
3125F3
3150F3
3180F3
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PDF
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KU107-01
Abstract: ku107 ku1090 optoswitch KU110-01
Text: •OPTOSWITCH ▼OPTOSWICH Absolute Maximum Ratings Input Operating Characteristics Output Input Collector Emitter Type No. Power Forward Reverse Emitter Collector Collector Operating Dissipation Current Voltage Voltage Voltage Current Temp. Ir MAX. 30 5 20
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KU107-01
KU109-01
KU109-22
KU110-01
KU110-02
KU139-32
ku107
ku1090
optoswitch
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PDF
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hokuriku
Abstract: No abstract text available
Text: <3jd ¡£>- HOKURIKU '96 GENERAL CATALOG H yb rid In tegrate d C ir c u it s . D Printed R e sisto r C irc u its. Tactile S w it c h e s .(D Variable R e s is t o r s .(J
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. <£ RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 13 , 19 LOC DIST G ALL RIGHTS RESERVED. REVISIONS 14 LTR DESCRIPTION DATE REV / 0720-0977-96 H 3JUN96 DWN APVD ME BB D D LR71ââ W IR E BODY ^ L^ ) RANGE 2 2 - 1 G A WG
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3JUN96
10SAMP
09MAY94
DEPT1732
DWG7732
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PDF
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TUD22
Abstract: No abstract text available
Text: 4 THIS DRAWINO IS UNPUBLISHED. <£ RELEASED FOR PUBLICATION flV AMP INCORPORATED. COPYRIGHT 13 , 19 LOC G ALL RIGHTS RESERVED. REVISIONS DIST 14 LTR H DESCRIPTION DATE REV / 0720-0977-96 3JUN96 DWN APVD ME BB D D LR71ââ W IR E BODY ^ L ^ ) RAN G E 2 2 -1 G A WG
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3JUN96
MIL-T-7928
M1L-T-10727
09HAY94
/4MP10398
DWG7732
TUD22
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PDF
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250WV
Abstract: 100WV T f2d MPE capacitors
Text: FILM CAPACITORS ♦CHARACTERISTICS Typical characteristics are shown below. Capacitances are 0.1 pi F ♦ TEMPERATURE CHARACTERISTICS tans Capacitance c/c(%) - 6 -20 20 40 60 80 100 -40 Dissipation factor -20 20 40 Insulation resistance IR{M Q )
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250WV
125VAC
AC125
250VAC
AC250
250WV
100WV
T f2d
MPE capacitors
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PDF
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Untitled
Abstract: No abstract text available
Text: *70# TOX 9001 Gallium Aluminum Arsenide Light Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES • • This is a high radiance GaAIAs IR LED optimized for fiber optic applications requiring high power and fast response time. ABSOLUTE MAXIMUM RATINGS
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OCR Scan
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G00D524
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PDF
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Untitled
Abstract: No abstract text available
Text: TOX 9003 Gallium Aluminum Arsenide _ Light Emitting Diode DESCRIPTION FEATURES High radiance GaAIAs IR LED optimized for coupling to a variety of fibers. The unique LED chip design combines high power coupling with wide bandwidth operation. • • •
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OCR Scan
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G00D524
IH375)
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PDF
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C858C
Abstract: No abstract text available
Text: BC856A - BC858C VISHAY PNP SURFACE MOUNT SMALL SIGNALTRANSISTORS /uTE M ir I POWER SEMICONDUCTOR J Features • • • • • Epitaxial Die Construction Ideally Suited tor Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available BC846-BC848)
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BC856A
BC858C
BC846-BC848)
OT-23
OT-23,
MIL-STD-202,
BC856B
BC857A
BC857B
C858C
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PDF
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Untitled
Abstract: No abstract text available
Text: Housings - WAVEBOX Printed circ u it board S 22.5 WAVEBOX S 22.5 3j<_gXJ—-j*- »1 t Material FR 1.0 m« / 0.35 p CU WAVEBOX L 22.5 H-S Printed c irc u it board L 22.5 um z ir - WAVEBOX 12.5 208 W eldm illler WAVEBOX 17.5 Rail-mounted profiles RS RS 80 RS 100
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PDF
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E1A4A
Abstract: E13288 bb 8721 52956-3 7461
Text: 4 THIS DRAWINO IS UNPUBLISHED. <£ RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 13 , 19 6 ALL RIGHTS RESERVED. REVISIONS DIST LOC 14 LTR DESCRIPTION DATE REV / 0720-0977-96 K DWN APVD 3JUN96 ME BB D LR71ââ W IR E BODY 4 . 1 7 ±0 . 1 3 -[. 1 6 4 ± . 0 0 5 J
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13JUN96
E13288
1E-14
1G-14
250NGE
M1L-T-10727
2SJUN95
26JUN95
09MAY94
E1A4A
bb 8721
52956-3
7461
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PDF
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Untitled
Abstract: No abstract text available
Text: SG7900AISG7900AC SG7900/SG7900C 3jLJLJUr^ HEN EF^L U N E A R IN TE G R A TE D C IR C U IT S NEGATIVE FIXED VOLTAGE REGULATOR DESCRIPTION FEATURES The SG7900A/SG7900 series of negative regulators offer self-contained, fixedvoltage capability with up to 1.5A of load current. With a variety of output voltages
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SG7900AISG7900AC
SG7900/SG7900C
SG7900A/SG7900
SG7800A/SG7800,
SG140/SG340
SG7900A
500mA
120HZ,
10OKHz
1000hrs.
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PDF
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