Untitled
Abstract: No abstract text available
Text: DESIGN KIT Texas Instruments TECHNICAL DATA: L: IR: Isat: RDC: 0.82 ~ 1500 µH 0.52 ~ 27 A 0.68 ~ 35 A 0.0009 ~ 2.3 Ω Order Code 744 728 Version 2.0 www.we-online.com Texas Instruments 744 028 000 82 744 028 002 L: 0.82 H L: IR: 2.00 A IR: Isat: 1.60 A
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22N19
Abstract: BC548c PHILIPS philips resistors philips crt Jinn TDA4882 48106 7 segment display 5612 AN9401 diagram tv Philips 14
Text: Application Note Improved Brightness Uniformity Ir. J.J. Hekker Product Concept & Application Laboratory Eindhoven, the Netherlands. Keywords Parabola generator Brightness uniformity Brightness decrease Contrast modulation Wide-screen Report No Date Pages
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ETV/AN94012
TDA4882)
22N19
BC548c PHILIPS
philips resistors
philips crt
Jinn
TDA4882
48106
7 segment display 5612
AN9401
diagram tv Philips 14
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IR135DM16CCB
Abstract: No abstract text available
Text: Bulletin I0115J 09/00 IR135DM16CCB STANDARD RECOVERY DIODES Junction Size: Rectangular 135 x 100 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 8EWS.S Series Major Ratings and Characteristics Parameters
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I0115J
IR135DM16CCB
IR135DM16CCB
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IR135DM16CCB
Abstract: No abstract text available
Text: Bulletin I0115J 09/00 IR135DM16CCB STANDARD RECOVERY DIODES Junction Size: Rectangular 135 x 100 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 8EWS.S Series Major Ratings and Characteristics Parameters
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I0115J
IR135DM16CCB
12-Mar-07
IR135DM16CCB
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str f 6264
Abstract: BROWN BOVERI str 6264 uge 1112 AY4 rectificadores "sim welding" diagram Kopp MS 85 ABB CO-8 CI 6264 din 6900
Text: High Voltage rectifiers Hochspannungsgleichrichter Edition 97 Reg. Nr. 2743-02 Symbols and Definitions Kurzzeichen und Begriffe a Acceleration a Rüttelfestigkeit IF AV M IF(RMS) IFSM IR Maximum mean forward current Maximum RMS forward current Surge forward current
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SOD-123 marking code 24
Abstract: zener sot23 marking MARKING CODE DO-214AC BZV55C4V3 1N5988B 1N6006B BZV55C6V2 BZV55C12 1N5994B BZV55C15
Text: TM Micro Commercial Components ZENER DIODES MCC Part Number Maximum Zener Impedance ‘B’ Suffix Only Maximum Reverse Leakage Current IR @ VR Max. Zener Voltage Temp Coefficient ‘B’ Suffix Only Nominal Zener Voltage Vz @ Izt Test Current IZT Volts mA
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DO-214AA
SMBJ5382B
SMBJ5383B
SMBJ5384B
SMBJ5385B
SMBJ5386B
SOD-123 marking code 24
zener sot23 marking
MARKING CODE DO-214AC
BZV55C4V3
1N5988B
1N6006B
BZV55C6V2
BZV55C12
1N5994B
BZV55C15
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 250 mV L 3.3 µH ±20% Rated current ∆T = 40 K IR 3.3 A max. Saturation current |ΔL/L| < 10% 4.5 A typ. DC Resistance
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 250 mV L 1.5 µH ±20% Rated current ∆T = 40 K IR 4.3 A max. Saturation current |ΔL/L| < 10% 7.3 A typ. DC Resistance
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 250 mV L 1000 µH ±20% Rated current ΔT = 40K IR 0.24 A max. Saturation current |ΔL/L| < 10% 0.25 A typ. DC Resistance
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744777003
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 250 mV L 3.3 µH ±20% Rated current ∆T = 40 K IR 5.00 A max. Saturation current |ΔL/L| < 10% 4.60 A typ. DC Resistance
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 250 mV L 560 µH ±20% Rated current ΔT = 40K IR 0.33 A max. Saturation current |ΔL/L| < 10% 0.35 A typ. DC Resistance
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 250 mV L 10 µH ±20% Rated current ∆T = 40 K IR 2.0 A max. Saturation current |ΔL/L| < 10% 2.6 A typ. DC Resistance
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 250 mV L 12 µH ±20% Rated current ∆T = 40 K IR 1.82 A max. Saturation current |ΔL/L| < 10% 2.4 A typ. DC Resistance
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744777002
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 250 mV L 2.2 µH ±20% Rated current ∆T = 40 K IR 6.00 A max. Saturation current |ΔL/L| < 10% 6.50 A typ. DC Resistance
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Untitled
Abstract: No abstract text available
Text: 13 12 .02 5 10 ;q 004 TYP CKTS 0 .6 4 S E E NOTE N O T E 8 .118±.004 02 " 3.0 0 ± 0 .1 0 NON-ACCUM. 04 06 C IR C U IT 08 1 10 12 14 TYP (S E E NO TE 16 41± 0.05 ' 8) TY R SEE NOTE 6 18 20 22 24 CIRCUIT T C IR C U IT C IR C U IT 1 IDENTIFIED ON THIS SURFACE
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Untitled
Abstract: No abstract text available
Text: 13 12 10 A CKTS "S — S— Et" S E E NOTE 7 ± .0 0 4 ± 0.10 .0 6 3 02 | . I I8±.0Q 4 1.60 ( S E E N O TE 7) " 3 .0 0 ± 0 .10 04 NON-ACCUM 06 LA ST % % % C IR C U IT • 08 10 12 (S E E N O TE 7) 14 à I TYP 16 18 C IR C U IT 20 „0 5 0 C IR C U IT
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SD-45329-002
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IR04
Abstract: BIR-BN731
Text: INFRARED EMITTING DIODES • M O D EL: B IR -B x x x l , B IR -B x x x 4 , B1R-B xxx4-1 , B I R - F x x x l , B IR -N x x x l . ■ A P P L IC A T IO N S • R em o te C o n tro l ■ • P h o to D etecto r ■ S m o k e D e te c to r • A u to m a tic C ontrol S y ste m
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IR-05
IR-01
B1R-Bx731
IR-02
BIR-Bx734
tR-03
BIR-Bx734-1
IR-04
IR-05
IR04
BIR-BN731
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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LG color tv Circuit Diagram schematics
Abstract: texas ttl YJ 162A Texas Instruments TTL integrated circuits catalog SN74180 AC digital voltmeter using 7107 Sii 9024 MC3123 sn74ls860 SN7490AJ sn74243
Text: IN D EXES Alphanumeric • Functional/Selection Guide IN T E R C H A N G E A B ILIT Y GUIDE G E N E R A L INFORM ATION O RD ERIN G IN STRUCTIO N S AND M ECH A N ICA L D A TA 5 4 /7 4 FA M ILIE S OF CO M PATIBLE T T L C IR C U ITS 54/74 F A M IL Y SSI C IR C U ITS
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MIL-M-38510
38510/MACH
3186J
Z501201
Z012510
Z011510
D022110
D022130
D021110
D021130
LG color tv Circuit Diagram schematics
texas ttl
YJ 162A
Texas Instruments TTL integrated circuits catalog SN74180
AC digital voltmeter using 7107
Sii 9024
MC3123
sn74ls860
SN7490AJ
sn74243
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staircase generator
Abstract: TA734 FJT1000 JUA734HM PA734
Text: MA734 PRECISION VOLTAGE COMPARATOR F AIRCH ILD LINEAR INTEGRATED C IR C U IT G E N E R A L D E S C R IP T IO N — The mA 734 is a Precision Voltage Comparator constructed on a single silicon chip using the Fairchild Planar* epitaxial process. It is specifically designed for high accuracy
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MA734
uA734
pA734
FJT1000
staircase generator
TA734
FJT1000
JUA734HM
PA734
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PK-70873-05
Abstract: No abstract text available
Text: 10 12 13 .025 " 0.64- ;q 004 typ i— □ S E E CKTS N O T E 8 02 1181.004 3 .00±0.10 .262 6.65 .380 9.65 .498 12.65 .616 15.65 .734 18.65 .852 21.65 .970 24.65 1.088 27.65 1.206 30.65 1.325 33.65 1.443 36.65 1.561 39.65 TYP 04 NON-ACCUM. 06 08 C IR C U IT
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SD-43045-003
PK-70873-05
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0315D
Abstract: pk-70873-05"" PK-70873-05 molex
Text: 10 12 13 .025 " 0.64- ;q 004 typ i— □ S E E CKTS N O T E 8 02 1181.004 3 .00±0.10 .262 6.65 .380 9.65 .498 12.65 .616 15.65 .734 18.65 .852 21.65 .970 24.65 1.088 27.65 1.206 30.65 1.325 33.65 1.443 36.65 1.561 39.65 TYP 04 NON-ACCUM. 06 08 C IR C U IT
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PS-45499-002.
0315D
pk-70873-05""
PK-70873-05 molex
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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Untitled
Abstract: No abstract text available
Text: PLCC Sockets FCI basics4 • Conform to EIA JEDEC outlines for 1.27 mm .050" plastic leaded chip carriers ■ High temperature, IR reflow compatible plastic is STANDARD ■ Automation compatible • Center pad for pick and place • Tape-and-reel packaging
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1-888-499-4FCI
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