IR 9133 Search Results

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

IRF734

Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
Contextual Info: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

UA317

Abstract: Fairchild dtl catalog free transistor equivalent book 2sc lm741 MA339PC MA725HM MA7805KM UA759 gi 9640 diod MA4136PC
Contextual Info: $9.9! •— r c m m pq, F A IR C H IL D A S chlum berger C om pany Linear Data Book Linear Division Introduction The Linear Data Book includes the standard linear product line plus our new W inchester Disk Drive circuits and CLASIC standard cells. For ease o f reference linear

1rf9530

Abstract: IRF9530 IRF9530 mosfet IRF9531 L 9132 IRF9530* p-channel power MOSFET IRF9532 9133 1RF953 IRFP9131
Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E D IR F 9 5 3 0 /9 5 3 1 Z9 5 3 2 / 9 5 3 3 I R F P 9 1 3 0 /9 1 3 1 /9 1 3 2 /9 1 3 3 j • T T b H l H E D D I S E S M Ö D 1! P-CHANNEL POWER MOSFETS FEATU RES • • • • • • • TO-220 Lower R d s o n

f9530

Abstract: IRF9530 L 9132 diode 9532 IRF9530 mosfet IRF9530* p-channel power MOSFET 9532 mosfet IR mosfets OA 91 diode ir 9133
Contextual Info: IRF9530/9531 /9532Z9533 IRFP9130/9131 /9132/9133 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended sate operating area

AN-994

Abstract: IRL3103 IRLR3103 IRLU3103
Contextual Info: PD - 91333E IRLR/U3103 HEXFET Power MOSFET Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3103 l Straight Lead (IRLU3103) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 30V RDS(on) = 0.019Ω

Contextual Info: PD - 91333E IRLR/U3103 HEXFET Power MOSFET Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3103 l Straight Lead (IRLU3103) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 30V RDS(on) = 0.019Ω

1RF9130

Abstract: L 9132 diode 9532 F913 IR 9530 irf 131 on irfp9131 IRF9130-2
Contextual Info: '"7964142 " S AM S U N G SEMICONDUCTO nhHJ,4d UUU54US 7 mFSi 30/913179132/9133 ^ 1RFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 Preliminary Specifications P -C H A N N E L T a -1 0 0 Volt, 0.30 Ohm SFET 0D0S40S ? PRODUCT SUMMARY Part Number Vus RoS on Id

AN-994

Abstract: IRL3103 IRLR3103 IRLU3103
Contextual Info: PD - 91333E IRLR/U3103 HEXFET Power MOSFET Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3103 l Straight Lead (IRLU3103) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 30V RDS(on) = 0.019Ω

IRf 48 MOSFET

Abstract: N CHANNEL 250A SINGLE PHASE POWER MOSFET 9936 mosfet P 838 X MOSFET DATA SHEET MOSFET SO-8 IRF7413 power mosfet so8 FL 91330
Contextual Info: PD - 91330E IRF7413 HEXFET Power MOSFET Advanced Power MOSFET Technology Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V

irf 44 n

Abstract: IRF7413
Contextual Info: PD - 91330D IRF7413 PROVISIONAL HEXFET Power MOSFET Advanced Power MOSFET Technology Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A A D 1 8 S 2 7 D S 3 6 D G

U3103

Abstract: AN-994 IRL3103 IRLR3103 IRLU3103
Contextual Info: PD - 91333D IRLR/U3103 HEXFET Power MOSFET Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3103 l Straight Lead (IRLU3103) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 30V RDS(on) = 0.019Ω

Contextual Info: PD - 91339A IRF520N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier

IRF520N

Abstract: specifications Irf520N 7A, 100v fast recovery diode
Contextual Info: PD - 91339A IRF520N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier

IRF520N

Abstract: specifications Irf520N
Contextual Info: PD - 91339A IRF520N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD-91338F International IÖR Rectifier • • • • • • • IRL3103S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3103S Low-profile through-hole (IRL3103L) 175°C Operating Temperature Fast Switching

IRLR2905

Abstract: AN-994 IRLU2905 IRLZ44N
Contextual Info: PD- 91334E IRLR/U2905 HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2905 Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G ID = 42A…

Contextual Info: PD- 91334E IRLR/U2905 HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2905 Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G ID = 42A…

1RFP9240

Abstract: irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX
Contextual Info: '"7964142 S A M S U N G SEM_ICONDUCTO ,> ." IRF9130/9131/9132/9133 T " IRFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 <*I b 4 1 4 d UUU54Ü5 _ ' P-CHANNEL Preliminary Specifications DE 1 7 ^ 4 1 4 2 - 1 0 0 Volt, 0.30 Ohm SFET PRODUCT SUMMARY 0D05405 ? Part Number

Contextual Info: PD- 91335D IRLR/U2703 HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2703 Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.045" G ID = 23A…

AN-994

Abstract: IRFR120 IRL2703 IRLR2703 IRLU2703
Contextual Info: PD- 91335D IRLR/U2703 HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2703 Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.045Ω G ID = 23A…

IRHM7160

Abstract: IRHM7230 IRHM8160 IRHM8230
Contextual Info: PD - 91331B IRHM7160 IRHM8160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100Volt, 0.045Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total