Infrared 450 nm
Abstract: No abstract text available
Text: Optical Devices Epson Toyocom Product number please contact us X3Fxxxxxxxxxx00 OPTICAL DEVICE OLPF IR-cut Filter •Sharply cut infrared ray UV•IR-cut •Sharply cut infrared ray Anti-Dust coat •Reduce dust adhesion, improve dust removal IR-cut Filter
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X3Fxxxxxxxxxx00
Infrared 450 nm
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ir cut filter
Abstract: 420625
Text: IR CUT FILTER - ALD PRODUCT BRIEF KEY FEATURES AND BENEFITS API Nanotronics Introduces Low Edge Shift IR Cut Filters from its NanoOpto Division based on Atomic Layer Deposition. Ideal for high performance digital imaging applications, they are fabricated with a conformal atomic
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x2295
ir cut filter
420625
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Untitled
Abstract: No abstract text available
Text: Low Pass Filter for Cable Modem Applications ELECTRONICS INC. EPB5208G • Integrated LPF designed to work with Texas Instruments 4522 • Robust construction allows for IR/VP processes Electrical Parameters @ 25°C Cut-Off Frequency MHz Typ. 68 Insertion
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EPB5208G
CSB5208G
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XFMR
Abstract: No abstract text available
Text: Low Pass Filter for Cable Modem Applications ELECTRONICS INC. EPB5205G • Integrated LPF designed to work with Texas Instruments 4522 • • Robust construction allows for IR/VP processes • Electrical Parameters @ 25° C Cut-Off Frequency MHz Typ. 68
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EPB5205G
CSB5205G
XFMR
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BCM3210
Abstract: BCM3033 BCM3137 EPB5188 LPF marking
Text: Low Pass Filter for Cable Modem Applications ELECTRONICS INC. EPB5188 • Integrated LPF designed to work with Broadcom • BCM3033, BCM3137 and BCM3210 • Robust construction allows for IR/VP processes • Electrical Parameters @ 25° C Cut-off Frequency
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EPB5188
BCM3033,
BCM3137
BCM3210
Hz-60
CSB5188
BCM3210
BCM3033
EPB5188
LPF marking
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance 100 MHz Z 90 Ω ±25% Rated current ∆T = 40 K IR RDC 280 mA max. 0.30 Ω max. DC Resistance Cut-off frequency |Sdd21| = 3 dB
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Sdd21|
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance 100 MHz Z 67 Ω ±25% Rated current ∆T = 40 K IR RDC 320 mA max. 0.24 Ω max. DC Resistance Cut-off frequency |Sdd21| = 3 dB
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Sdd21|
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance 100 MHz Z 67 Ω ±25% Rated current ∆T = 40 K IR RDC 320 mA max. 0.24 Ω max. DC Resistance Cut-off frequency |Sdd21| = 3 dB
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Sdd21|
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance 100 MHz Z 67 Ω ±25% Rated current ∆T = 40 K IR RDC 320 mA max. 0.24 Ω max. DC Resistance Cut-off frequency |Sdd21| = 3 dB
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Sdd21|
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance 100 MHz Z 67 Ω ±25% Rated current ∆T = 40 K IR RDC 320 mA max. 0.24 Ω max. DC Resistance Cut-off frequency |Sdd21| = 3 dB
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Sdd21|
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impendance 100 MHz Z 67 Ω ±25% Rated Current ∆T = 40 K IR RDC 320 mA max. 0.24 Ω max. DC Resistance Cut-Off Frequency |Sdd21| = 3 dB Insulation Test Voltage
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Sdd21|
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impendance 100 MHz Z 120 Ω ±25% Rated Current ∆T = 40 K IR RDC 280 mA max. 0.30 Ω max. DC Resistance Cut-Off Frequency |Sdd21| = 3 dB Insulation Test Voltage
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Sdd21|
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BPV20NFL
Abstract: No abstract text available
Text: TELEFUNKEN Semiconductors BPV 20 NFL Silicon PIN Photodiode Description BPV20NFL is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens and extra long leads. The epoxy package itself is an IR filter, spectrally
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BPV20NFL
D-74025
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BPV23NFL
Abstract: No abstract text available
Text: TELEFUNKEN Semiconductors BPV 23 NFL Silicon PIN Photodiode Description BPV23NFL is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens and extra long leads. The epoxy package itself is an IR filter, spectrally
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BPV23NFL
D-74025
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BPV21F
Abstract: No abstract text available
Text: TELEFUNKEN Semiconductors BPV 21 F Silicon PIN Photodiode Description 94 8387 BPV21F is a high speed and high sensitive PIN photodiode in a plasic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters
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BPV21F
D-74025
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950NM
Abstract: BPV20F
Text: TELEFUNKEN Semiconductors BPV 20 F Silicon PIN Photodiode Description 94 8387 BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters
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BPV20F
950nm)
D-74025
950NM
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BPV23F
Abstract: No abstract text available
Text: TELEFUNKEN Semiconductors BPV 23 F Silicon PIN Photodiode Description BPV23F is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters
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BPV23F
D-74025
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hcp 932
Abstract: capacitor jianghai cd 293
Text: CD 281 LL Series 3 000 - 12 000h at 105°C CD 269 PH • Longest Lifetime 105°C · Low Impedance · Power Supplies · Smoothing, Buffering, Filtering 125°C CD 110 PT 85°C CD 287 GC smaller lower ESR CD 28L QL lowest ESR longest life CD 281 LL CD 284 XY Item
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120Hz)
v2006
hcp 932
capacitor jianghai cd 293
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NUF4001MU
Abstract: NUF4001MUT2G
Text: NUF4001MU Low Capacitance 4 Line EMI Filter with ESD Protection in UDFN8 Package This device is a 4 line EMI filter array for wireless applications. Greater than −25 dB attenuation is obtained at frequencies from 800 MHz to 5.0 GHz. The NUF4001MU has a cut−off frequency of
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NUF4001MU
NUF4001MU
NUF4001MU/D
NUF4001MUT2G
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Untitled
Abstract: No abstract text available
Text: EPE6310G • Robust construction allows for IR/VP processes • • Available in SMD, DIP and DIL Packages • Electrical Parameters @ 25° C Cut-off Frequency MHz Insertion Loss (dB Max.) Return Loss (dB Min.) Attenuation (dB Min.) ± 3.0 MHz 5-42 MHz 5-42
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OCR Scan
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EPE6310G
CSE6130G
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Untitled
Abstract: No abstract text available
Text: J f e f /H X Optical Device • ^ ^ □ - ' ^ ^ T J I ' ^ Z ' ^ ' i l l ' P l ' T . / O R D E R I N G FORMAT OF OPTICAL LOW PASS FILTER & Z ' f f i g T Z L'o -r )^ 9 (D Please specify the following items when ordering Optical Low Pass Filter. 1. s m Application
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Untitled
Abstract: No abstract text available
Text: J fc jr/W 7s Optical Device KSS /\°X7<;k£Optical Low Pass Filter • ttti/S p e c ific a tio n s AS S Item ffl IS 5~30mm v fS Outline dimensions -fl-HISlS] Separation direction Specification <j> \ 5~30mm(|> On discussion Optic axis tolerance ±60' MAX.
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30/rmMAX.
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Untitled
Abstract: No abstract text available
Text: Optical Device Optical Low Pass Filter • ^ ^ /S p e c ific a t io n 31 § Item IS Specification 5 ~30mm<£ ; 5 ~30mm □ (Outline dimensions) siH ifT-g-ttcJ; ‘J ^ S ; On discussion •ft-Htl/fin] (Separation direction) (Optic axis tolerance) ±60' MAX.
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30/zmLLlF
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Untitled
Abstract: No abstract text available
Text: f O r M T * Optical Device kss 7 < ^ ( D Z '^ lC O l'T / O R D E R I N G FORMAT OF OPTICAL LOW PASS FILTER 7 < >£<7)H@ £ I'o Please specify the following items when ordering Optical Low Pass Filter. 1. iflt) Application i i f l t> * 7 DSC DSC Video camera
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