Untitled
Abstract: No abstract text available
Text: A d va n ced P o w er Te c h n o l o g y * A2 APT2X101D100J 1000V 100A APT2X101D90J 900V 100A APT2X101D80J 800V 100A Al DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT2X101D100J
APT2X101D90J
APT2X101D80J
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE30
O-204AA/AE)
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mosfet 10a 800v
Abstract: IRFAE30
Text: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE30
O-204AA/AE)
parame252-7105
mosfet 10a 800v
IRFAE30
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SOT-227 Package
Abstract: No abstract text available
Text: APT8015JVFR A dvanced P o w er Te c h n o lo g y 800V 44A 0.150^ POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT8015JVFR
OT-227
APT8015JVFR
MIL-STD-750
00A/HS,
SOT-227 Package
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Untitled
Abstract: No abstract text available
Text: A dvanced POWER Te c h n o l o g y ' APT8018JNFR 800V 40A 0.180 ISOTOP* J Ü I "UL Recognized" File No. E145592 S POWER MOS IVe A V A L A N C H E R A TED F R E D F E T N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol Parameter
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APT8018JNFR
E145592
00A/HS,
OT-227
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R2480G2
Abstract: TA49392
Text: ISL9R2480G2 TM Data Sheet P RE L I M I NA R Y November 2000 File Number 5005 24A, 800V Stealth Diode Features The ISL9R2480G2 is a Stealth™ diode optimized for low loss performance in high frequency applications. The Stealth family exhibits low reverse recovery current IRRM and
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ISL9R2480G2
ISL9R2480G2
TA49392.
R2480G2
TA49392
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TA49392
Abstract: ISL9R2480G2 R2480G2 R2480G
Text: ISL9R2480G2 Data Sheet P RE LIMINARY November 2000 File Number 5005 24A, 800V Stealth Diode Features The ISL9R2480G2 is a Stealth™ diode optimized for low loss performance in high frequency applications. The Stealth family exhibits low reverse recovery current IRRM and
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ISL9R2480G2
ISL9R2480G2
TA49392
R2480G2
R2480G
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IRFBE30L
Abstract: IRFBE30S
Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30S
IRFBE30L
O-262
12-Mar-07
IRFBE30L
IRFBE30S
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Untitled
Abstract: No abstract text available
Text: AUIRFB8407 AUIRFS8407 AUIRFSL8407 AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
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AUIRFB8407
AUIRFS8407
AUIRFSL8407
AUIRFB/S/SL8407
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Untitled
Abstract: No abstract text available
Text: AUIRFB8407 AUIRFS8407 AUIRFSL8407 AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
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AUIRFB8407
AUIRFS8407
AUIRFSL8407
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P-Channel MOSFET 800v
Abstract: IRFBE30L IRFBE30S IRL3103L
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
12-Mar-07
P-Channel MOSFET 800v
IRFBE30L
IRFBE30S
IRL3103L
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silicon carbide
Abstract: No abstract text available
Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A D K K K F E2 G2 U E2 C1 J G1 E1 C2E1 H Z AB EB UU H U AA Q Q P G N S - NUTS (3 TYP) T - (4 TYP) W V
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QJD1210007
Amperes/1200
silicon carbide
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QJD1210011
Abstract: No abstract text available
Text: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 10 11 12 X B M N E G DETAIL "B"
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QJD1210011
Amperes/1200
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Untitled
Abstract: No abstract text available
Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP) T - (4 TYP)
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QJD1210007
Amperes/1200
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welder mosfet
Abstract: mosfet base induction heat circuit QJD1210010 MOSFET 1000 VOLTS high frequency welder circuit diagram sic mosfet
Text: QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 10 11 12 X B M N E G DETAIL "B"
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QJD1210010
Amperes/1200
welder mosfet
mosfet base induction heat circuit
MOSFET 1000 VOLTS
high frequency welder circuit diagram
sic mosfet
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Untitled
Abstract: No abstract text available
Text: SSP3N80A FEATURES - 800 V ^DS on = 4.8 Q. • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 800V B Low Rds(0n) ■ 3.800 £1 (Typ.) CO Avalanche Rugged Technology
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SSP3N80A
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Untitled
Abstract: No abstract text available
Text: SSS3N80A A d v a n c e d Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA M ax.’ @ V DS = 800V ^ D S (o n =
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SSS3N80A
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QJD1210006
Abstract: DIAGRAM OF 5000 volts power inverter
Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A D K K K F E2 G2 U E2 H C1 J G1 E1 C2E1 Z AB EB UU H U AA Q Q P G N S - NUTS (3 TYP) T - (4 TYP) W V
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QJD1210006
Amperes/1200
simplif25
DIAGRAM OF 5000 volts power inverter
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Untitled
Abstract: No abstract text available
Text: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE50
O-204AA/AE)
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P-Channel MOSFET 800v
Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
Dissi957)
EIA-418.
P-Channel MOSFET 800v
800v irf
IRF P CHANNEL MOSFET
IRF P CHANNEL MOSFET 100v
IRFBE30L
IRFBE30S
IRL3103L
P-Channel mosfet 400v
P Channel Power MOSFET IRF
ED marking code diode
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Untitled
Abstract: No abstract text available
Text: A dvanced P ow er Te c h n o l o g y O D U/ O S APT8075SN Ù 800V 13.0A 0.75Q POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage
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APT8075SN
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Untitled
Abstract: No abstract text available
Text: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE40
O-204AA/AE)
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100A inverter mosfet
Abstract: QJD1210006 MOSFET 1000 VOLTS 1200v mosfet "MOSFET Module" MOSFET 20V 100A mosfet transistor 800 volts.300 amperes silicon carbide
Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)
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QJD1210006
Amperes/1200
100A inverter mosfet
MOSFET 1000 VOLTS
1200v mosfet
"MOSFET Module"
MOSFET 20V 100A
mosfet transistor 800 volts.300 amperes
silicon carbide
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PDF
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mosfet 10a 800v
Abstract: IRFAE40
Text: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE40
O-204AA/AE)
mosfet 10a 800v
IRFAE40
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