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    IR IGBT 1200V 40A Search Results

    IR IGBT 1200V 40A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IR IGBT 1200V 40A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MIMMG40H120XB6TN

    Abstract: 1 phase igbt 1200V 40A module inverter circuit diagram
    Text: MIMMG40H120XB6TN 1200V 40A PIM Module RoHS Compliant FEATURES □ High level of integration—only one power semiconductor module required for the whole drive □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current


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    MIMMG40H120XB6TN Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG40H120XB6TN 1 phase igbt 1200V 40A module inverter circuit diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF


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    IRG7PH44K10DPbF IRG7PH44K10D-EPbF IRG7PH44K10DPbFÂ 247ACÂ IRG7PH44K10Dâ 247ADÂ O-247AC O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G GC VCE(ON) typ. = 1.9V @ IC = 25A E G Gate • Industrial Motor Drive


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    IRG7PH44K10DPbF IRG7PH44K10D-EPbF IRG7PH44K10DPbFÂ 247ACÂ IRG7PH44K10Dâ 247ADÂ O-247AC O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF


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    IRG7PH44K10DPbF IRG7PH44K10D-EPbF IRG7PH44K10DPbFÂ 247ACÂ IRG7PH44K10Dâ 247ADÂ O-247AC O-247AD PDF

    igbt "internal thermistor" schottky

    Abstract: APTGLQ IGBT PROTECTION DIODE
    Text: APTGLQ40DDA120CT3G VCES = 1200V IC = 40A @ Tc = 80°C Dual Boost chopper High speed Trench + Field Stop IGBT4 Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 13 14 CR1 CR2 22 7 23 8 Q1 Features


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    APTGLQ40DDA120CT3G igbt "internal thermistor" schottky APTGLQ IGBT PROTECTION DIODE PDF

    ir igbt 1200V 40A

    Abstract: 20MT120UF E78996 bridge
    Text: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery


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    20MT120UF E78996) 20KHz 12-Mar-07 ir igbt 1200V 40A 20MT120UF E78996 bridge PDF

    gp15n120

    Abstract: SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 ir igbt 1200V 40A Diode 1S 2473
    Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


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    SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 GP15N120 gp15n120 SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 ir igbt 1200V 40A Diode 1S 2473 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGP02N120 SGI02N120 SGD02N120, Fast IGBT in NPT-technology C • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


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    SGD02N120, 40lower SGP02N120 SGI02N120 PG-TO-252-3-1 PG-TO-220-3-1 O-220AB) O-252AA) PG-TO-262-3-1 O-262) PDF

    PG-TO-247-3-1

    Abstract: No abstract text available
    Text: SGW02N120 Fast IGBT in NPT-technology C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


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    SGW02N120 SGW02N120 PG-TO-247-3-1 PDF

    ic60a

    Abstract: No abstract text available
    Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


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    SGP15N120 SGW15N120 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW15N120 ic60a PDF

    JESD-022

    Abstract: SGW25N120 igbt sgw25n120
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


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    SGW25N120 SGW25N120 641-SGW25N120E8161 SGW25N120E8161 JESD-022 igbt sgw25n120 PDF

    gp15n120

    Abstract: SGP15N120 SGW15N120 igbt 1200V 20A PG-TO-247-3 PG-TO-220-3-1 1200v 20a IGBT ir igbt 1200V 10A
    Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 s • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


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    SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 GP15N120 SGW15N1 gp15n120 SGP15N120 SGW15N120 igbt 1200V 20A PG-TO-247-3 PG-TO-220-3-1 1200v 20a IGBT ir igbt 1200V 10A PDF

    g25n120

    Abstract: PG-TO-247-3-1 PG-TO247-3-1 G25N120 TSC Q67040-S4277 sgw25n120 M/250w smps inverter circuits
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


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    SGW25N120 SGW25N120 g25n120 PG-TO-247-3-1 PG-TO247-3-1 G25N120 TSC Q67040-S4277 M/250w smps inverter circuits PDF

    SGW25N120

    Abstract: PG-TO-247-3 ir igbt 1200V 40A
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


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    SGW25N120 PG-TO-247-3 SGW25N120 PG-TO-247-3 ir igbt 1200V 40A PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 13A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft


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    I27278 GB10RF120K E78996 12-Mar-07 PDF

    G15N120

    Abstract: No abstract text available
    Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


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    SGP15N120 SGW15N120 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW15N120 G15N120 PDF

    ir igbt 1200V 40A

    Abstract: G15N120
    Text: SGB15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


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    SGB15N120 SGB15N120 ir igbt 1200V 40A G15N120 PDF

    gp15n120

    Abstract: No abstract text available
    Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


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    SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3-1 SGW15N120 gp15n120 PDF

    G15N120

    Abstract: No abstract text available
    Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


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    SGP15N120 SGW15N120 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW15N120 G15N120 PDF

    PG-TO252-3-11

    Abstract: SGD02N120
    Text: SGP02N120 SGI02N120 SGD02N120, Fast IGBT in NPT-technology C • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


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    SGD02N120, 40lower PG-TO-252-3-1 SGP02N120 SGI02N120 PG-TO-220-3-1 O-252AA) O-220AB) PG-TO-262-3-1 O-262) PG-TO252-3-11 SGD02N120 PDF

    igbt sgw25n120

    Abstract: 50S INFINEON SGW25N120 ir igbt 1200V 40A IGBT 1200V 60A igbt to247 PG-TO-247-3 igbt 1200V 40A short circuit
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 s • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


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    SGW25N120 PG-TO-247-3 SGW25N120 igbt sgw25n120 50S INFINEON ir igbt 1200V 40A IGBT 1200V 60A igbt to247 PG-TO-247-3 igbt 1200V 40A short circuit PDF

    12v 30a smps

    Abstract: 250w smps SGW25N120 250w smps inverter circuits high current igbt
    Text: SGW25N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


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    SGW25N120 P-TO-247-3-1 O-247AC) O-247AC Q67040-S4277 Jul-02 12v 30a smps 250w smps SGW25N120 250w smps inverter circuits high current igbt PDF

    GP02N120

    Abstract: 02N120 GI02N120 15v 60w smps SGI02N120 SGP02N120 fast recovery diode 1a 1200v SMD smps 10w 12V PG-TO-220-3-1 SGD02N120
    Text: SGP02N120 SGI02N120 SGD02N120, Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


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    SGP02N120 SGI02N120 SGD02N120, PG-TO-262-3-1 PG-TO-252-3-11 PG-TO-220-3-1 GP02N120 PG-TO-220. GP02N120 02N120 GI02N120 15v 60w smps SGI02N120 SGP02N120 fast recovery diode 1a 1200v SMD smps 10w 12V PG-TO-220-3-1 SGD02N120 PDF

    Q67040-S4271

    Abstract: SMPS 30v 20a
    Text: SGB02N120 Fast IGBT in NPT-technology C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


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    SGB02N120 P-TO-263-3-2 O-220AB) SGB02N120 Q67040-S4271 SMPS 30v 20a PDF