IR E78996 p135
Abstract: E78996 full bridge p135 Diode SCR italy PART NO. P125 E78996 p102w ir e78996 p132 E78996 datasheet full bridge p135 E78996 P125 E78996 P134 IR E78996 p125 P100 Series
Text: Bulletin I27125 rev. A 04/99 P100 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability 25A Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations
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I27125
E78996
12-Mar-07
IR E78996 p135
E78996 full bridge p135
Diode SCR italy PART NO. P125
E78996 p102w
ir e78996 p132
E78996 datasheet full bridge p135
E78996 P125
E78996 P134
IR E78996 p125
P100 Series
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Untitled
Abstract: No abstract text available
Text: User’s Manual RL78/I1A DC/DC LED Control Demonstration Kit 16 User’s Manual: Hardware 16-bit Microcontroller RL78/I1A R5F107DEG All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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RL78/I1A
16-bit
RL78/I1A
R5F107DEG
ZD401
R01UH0363EJ0100
R01UH0363EJ0100
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IR E78996 p135
Abstract: E78996 G1 G2 IR E78996 p125 E78996 full bridge p135 E78996 p102w IR P124 IR E78996 ir e78996 p132 E78996 datasheet bridge P102W E78996
Text: Bulletin I27125 rev. A 04/99 P100 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability 25A Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations
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I27125
E78996
IR E78996 p135
E78996 G1 G2
IR E78996 p125
E78996 full bridge p135
E78996 p102w
IR P124
IR E78996
ir e78996 p132
E78996 datasheet bridge
P102W E78996
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Untitled
Abstract: No abstract text available
Text: Bulletin I27125 rev. A 04/99 P100 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability 25A Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations
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I27125
E78996
08-Mar-07
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RD1004
Abstract: 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006
Text: ディスクリートデバイス 2010-7 環境にやさしい製品 超アナログ技術を極めるPower ＆RFデバイス Power 電 源 市 場 耐熱性 高アバランシェ 高耐圧・大電流 高効率 高ESD ・パワーマネジメント （LCDPDP、PC電源、照明）
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CDMA2000]
3-7300Fax
OVA21
052-453-1331Fax
06-6353-3361Fax
03-5701-1111Fax
078-928-8010Fax
078-331-8400Fax
075-371-4058Fax
052-459-3501Fax
RD1004
2SC5707
2sK4096
ECH81
rd1004ls
2SK4101
tf252th
SFT1443
vf10bm3
RD2006
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RD2004
Abstract: 2SK4087 2SK4097 2sk4086 2SC5707 2sk4096 SBX201C 2SC5706 2sk3615 half-bridge power supply
Text: ディスクリートデバイス 2009-4 三洋ディスクリートデバイス 環境に配慮した三洋ディスクリートデバイス ECoP R ディスクリートデバイスExPD パワーデバイス）は、 様々な分野の機器の小型化・薄型化・高効率化・高信頼性化に
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3LN02M
LV2282VA
EC2C01C
SVC710
SVC707
ECSP1008-2
P124A
RD2004
2SK4087
2SK4097
2sk4086
2SC5707
2sk4096
SBX201C
2SC5706
2sk3615
half-bridge power supply
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GR-468-CORE
Abstract: NX7312UA NX7313UA NX7314UA TOSA
Text: DATA SHEET LASER DIODE NX7312UA 1 310 nm FOR SHORT HAUL 156 Mb/s AND 622 Mb/s InGaAsP MQW-FP LASER DIODE TOSA DESCRIPTION The NX7312UA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP
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NX7312UA
NX7312UA
OC-12
GR-468-CORE
NX7313UA
NX7314UA
TOSA
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transistor P397
Abstract: transistor P479 P449 p331 TRANSISTOR transistor k38 v6 transistor P519 am2 am3 p055 power transistor f AJ38 w38 transistor
Text: MSX532 Matrix Switch Preliminary Data Sheet Features Description • • The MSX family of SRAM-based bit-oriented switching devices offers flow-through NRZ datarates of 300Mbps and registered clock frequencies of 200MHz. The 532 I/O Buffers IOBs are individually configured. The IOBs can be connected
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MSX532
200MHz
300Mbps
MKT-MSX532-DS
transistor P397
transistor P479
P449
p331 TRANSISTOR
transistor k38 v6
transistor P519
am2 am3
p055 power transistor
f AJ38
w38 transistor
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SRF 7016
Abstract: M30624FGPFP M30624FGPGP 100P6S-A 10MHZ 24MHZ TA40 8259ER SIM 300 AT COMMANDS
Text: er nt Preliminary Specifications Rev.1.0 Und opme l e v e Specifications in this manual are tentative and subject to change. d Overview Mitsubishi microcomputers M16C / 62P Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Overview The M16C/62P group of single-chip microcomputers are built using the high-performance silicon gate
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16-BIT
M16C/62P
M16C/60
100-pin
128-pin
M16C/62
M16C/62P)
SRF 7016
M30624FGPFP
M30624FGPGP
100P6S-A
10MHZ
24MHZ
TA40
8259ER
SIM 300 AT COMMANDS
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100P6S-A
Abstract: 10MHZ 24MHZ TA40 transistor 2TH Hitachi DSA00308
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M16C/62
M16C/62P)
100P6S-A
10MHZ
24MHZ
TA40
transistor 2TH
Hitachi DSA00308
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GR-468-CORE
Abstract: NX7312UA NX7313UA NX7314UA
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PS3 CPU old
Abstract: PO15R
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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howev67
REJ09B0162-0110
M32C/88
M32C/88T)
16/32-BIT
PS3 CPU old
PO15R
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MD7 LC 2716
Abstract: MD7 LC 2716 VOLTAGE CLEVO ati rage 128 amc ver 2.0 RO3 9435 QM723 96v inverter circuit diagrams 2N1072 R5C475II TX36D85VC
Text: 1 2 3 2800/2820/2850 4 5 Notebook Computer 6 7 Service Manual 8 i Preface NOTICE The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any
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IR p123
Abstract: T100K KL23008 P405W p105w T140K IR P124 25016D P102W L170-16
Text: 1 I n t e r n a t io n a l R e c t if ie r Phase Control SCR Part Number 20 Doubler Circuit Doubler Circuit Positive Control Negative Control VRRM Vdrm (V) lT(AV)«Tc •RAVI CQ (A) IT5M,IfSM(2) SOHz 50 Hz (A) (15) RthJCDC (K/W) nom- Fax-onDemand Number
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T100K
T120K
T140K
T160K
IR p123
KL23008
P405W
p105w
IR P124
25016D
P102W
L170-16
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Untitled
Abstract: No abstract text available
Text: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used
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PSX160,
PSX128B
PSX96B.
has27
DDD11SG
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PC1675G
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC1675G GENERAL PURPOSE WIDE BNAD AMPLIFIER DESCRIPTION The /¿PC1675G is a silicon monolithic integrated circuit employing small package 4pins mini mold and designed for use as a wide bnad amplifier convers from HF band to UHF band.
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uPC1675G
PC1675G
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alps rk series potentiometers
Abstract: RS60112
Text: ALPS Ordering Instructions ¿ T y ld tV tz tz < p i i , k h - t i X V Sri c o — J g ^ l Z t W hen ordering, please specify the items required in the t.~ o c? C i n / i i < tz following table according to the applications. m s «% , Remarks and reference pages
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RS10F,
P126to
alps rk series potentiometers
RS60112
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Untitled
Abstract: No abstract text available
Text: Bulletin 127125 International Rectifier I R rev. A 04/99 P100 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features • G la s s p a s s iv a te d ju n c tio n s fo r g r e a te r re lia b ility ■ E le c tric a lly is o la te d b a s e p la te ■ A v a ila b le up to 1 2 0 0 V RRM, V DRM
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UC1676
Abstract: PC1676G IC-1891
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC1676G GENERAL PURPOSE WIDE BNAD AMPLIFIER DESCRIPTION The /¿PC1676G is a silicon monolithic integrated circuit employing small package 4pins mini mold and designed for use as a wide band amplifier covers from HF band to UHF band.
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uPC1676G
PC1676G
UC1676
IC-1891
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC1652G SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER DESCRIPTION The ¿iPC1652G PIN CONNECTIONS is a silicon monolithic integrated circuit especially designed as a wide band amplifier convering HF band
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uPC1652G
iPC1652G
C10535E)
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101p1
Abstract: IC-3144
Text: DATA SHEET_ GaAs INTEGRATED CIRCUIT juPGIOOP, juPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION ¿¿PG100P and ^PG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. ¿¿PG100P is low noise amplifier from 50 MHz to 3 GHz and ¿xPG101P is a medium power amplifier in the same
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uPG100P
uPG101P
PG100P
PG101P
xPG101P
/xPG101P
101p1
IC-3144
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC2711T 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 13 dB TYP. @ f = 1 GHz • Excellent frequency response 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
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uPC2711T
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p1240
Abstract: STANAG-3910
Text: M IL-STD 1553 D a ta B u s T r a n s fo rm e rs 3Kohms minimum impedance at -55 °C BS9000 release available for both leaded and surface mount packages Release to BS9720 Generic Specification full or basic assessment available Extended range giving wide choice of
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BS9000
BS9720
PSELS00132
P1200
P2210
P2211
p1240
STANAG-3910
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1P137
Abstract: transistor 1p137 HRC 2J 225 HRC 2J 225 ratings p055 TRANSISTOR DATASHEET P06368 P058l P057C Z1P041 P124l
Text: "É sSs«t ! * I-C u b e PSX Family Data Sheet F eatures D e s c r ip t io n • SRAM-based, in-system programmable The PSX160, PSX128B and PSX96B are SRAM-based bus • Switch Matrix oriented switches with 160, 128 and 96 l/Os respectively. The devices are manufactured using a 0.6|jm CMOS process and
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133MHz
1P137
transistor 1p137
HRC 2J 225
HRC 2J 225 ratings
p055 TRANSISTOR DATASHEET
P06368
P058l
P057C
Z1P041
P124l
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