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Text: www.p-tec.net sales@p-tec.net Tel: Fax: 719 589 3122 (719) 589 3592 PLD99 PHOTODIODE SERIES 5MM (TO18) Features * High Illumination Sensitivity * Stable Characteristics * Spectrally and Mech. Matched with IR Emitter Absolute Maximum Ratings at TA = 25 °C
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PLD99
PLD99
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light sensitive trigger circuit Application
Abstract: proximity sensor interfacing with microcontroller HSDL-9100 proximity sensor block diagram microcontroller based smoke DETECTOR CIRCUIT DIAGRAM sunlight detector device ultraviolet detector ultraviolet sensor flame BC848 IEC825-1
Text: HSDL-9100 General Application Guide Application Note 5252 Introduction General product application HSDL-9100 is an analog-output reflective sensor with an integrated high efficiency infrared emitter and photodiode. The HSDL-9100 has employed the reflective IR technology. The optoelectronic sensor is
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HSDL-9100
HSDL-9100
HSDL9100
JStd020A
5989-4400EN
light sensitive trigger circuit Application
proximity sensor interfacing with microcontroller
proximity sensor block diagram
microcontroller based smoke DETECTOR CIRCUIT DIAGRAM
sunlight detector device
ultraviolet detector
ultraviolet sensor flame
BC848
IEC825-1
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PLD101
Abstract: No abstract text available
Text: www.p-tec.net sales@p-tec.net Tel: Fax: 719 589 3122 (719) 589 3592 PLD101 PHOTODIODE SERIES 5MM Features Absolute Maximum Ratings at TA = 25 °C * High Illumination Sensitivity * Stable Characteristics * Spectrally and Mech. Matched with IR Emitter Operating Temperature Range ………………………………….………….….- 20°C to + 80°C
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PLD101
PLD101
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photodiode 5mm
Abstract: 5mm ir photodiode IR photodiode 5mm IR photodiode 5mm photodiode silicon PIN photodiode Pin 10
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DPD-042-067 REV : PAGE : 1.0 1/7 5mm Silicon PIN Photodiode MODEL NO : PD423-3C/H22/L1 Features : Fast response time High photo sensitivity Small junction capacitance Description : PD423-3C/H22/L1 is a high speed and high sensitive PIN photodiode in a standard 5 plastic
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DPD-042-067
PD423-3C/H22/L1
PD423-3C/H22/L1
photodiode 5mm
5mm ir photodiode
IR photodiode 5mm
IR photodiode
5mm photodiode
silicon PIN photodiode Pin 10
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Text: PHOTODIODE 16 ELEMENT AXUV16ELG Dimensions are in inch [metric] units. FEATURES • 40 pin dual in-line package • Ideal for electron detection • 100% internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C Per Element PARAMETERS TEST CONDITIONS MIN 2mm x 5mm
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AXUV16ELG
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Text: PHOTODIODE 16 ELEMENT AXUV16ELG Dimensions are in inch [metric] units. FEATURES • 40 pin dual in-line package • Ideal for electron detection • 100% internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C Per Element PARAMETERS TEST CONDITIONS MIN 2mm x 5mm
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AXUV16ELG
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Untitled
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Text: 5mm Silicon PIN Photodiode , T-1 3/4 PD333-3C/H0/L2 Features •Fast response time •High photo sensitivity •Small junction capacitance •Pb free •This product itself will remain within RoHS compliant version. Description PD333-3C/H0/L2 is a high speed and high sensitive PIN photodiode
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PD333-3C/H0/L2
PD333-3C/H0/L2
DPD-0000154
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Abstract: No abstract text available
Text: 5mm Silicon PIN Photodiode , T-1 3/4 PD333-3B/H0/L2 Features •Fast response time •High photo sensitivity •Small junction capacitance •Pb free •This product itself will remain within RoHS compliant version. Description PD333-3B/H0/L2 is a high speed and high sensitive PIN photodiode
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PD333-3B/H0/L2
PD333-3B/H0/L2
DPD-0000063
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Text: PHOTODIODE: 5mm2 ODD-5W FEATURES • TO-5 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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632nm
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Text: PHOTODIODE: 5mm2 ODD-5W FEATURES • TO-5 hermetic package • Circular active area • Low capacitance ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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632nm
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Untitled
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Text: PHOTODIODE: 5mm2 - ISOLATED ODD-5WISOL FEATURES CASE NO CONNECTION • • • • TO-5 hermetic package Circular active area Low capacitance Isolated case RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr
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632nm
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE: 5mm2 ODD-5W FEATURES • TO-5 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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632nm
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5W-B
Abstract: No abstract text available
Text: PHOTODIODE: 5mm2 ODD-5WB FEATURES • TO-5 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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632nm
5W-B
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Text: PHOTODIODE: 5mm2 - ISOLATED ODD-5WISOL FEATURES CASE NO CONNECTION • • • • ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time Series Resistance
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Text: PHOTODIODE: 5mm2 - ISOLATED ODD-5WISOLB FEATURES CASE NO CONNECTION • • • • TO-5 hermetic package Circular active area Low capacitance Isolated case RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr
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Abstract: No abstract text available
Text: PHOTODIODE: 5mm2 - Isolated ODD-5WISOL FEATURES • • • • TO-35 hermetic package Circular active area Low capacitance Isolated case ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR
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632nm
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Text: PHOTODIODE: 5mm2 ODD-5W FEATURES • TO-35 hermetic package • Circular active area • Low capacitance ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C
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Text: PHOTODIODE: 5mm2 - ISOLATED ODD-5WISOL FEATURES CASE NO CONNECTION • • • • TO-5 hermetic package Circular active area Low capacitance Isolated case RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr
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632nm
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Abstract: No abstract text available
Text: PHOTODIODE: 5mm2 ODD-5WB FEATURES • TO-5 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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450nm
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Abstract: No abstract text available
Text: PHOTODIODE: 5mm2 ODD-5WB FEATURES • TO-5 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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Text: PHOTODIODE 5mm2 - ISOLATED ODD-5WBISOL FEATURES CASE NO CONNECTION • • • • TO-5 hermetic package Circular active area Low capacitance Isolated case RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R
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Text: PHOTODIODE 5mm2 ODD-5W FEATURES • TO-5 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C
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Text: PHOTODIODE 5mm2 - ISOLATED ODD-5WBISOL FEATURES CASE NO CONNECTION • • • • TO-5 hermetic package Circular active area Low capacitance Isolated case RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr
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450nm
1/16m2
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Abstract: No abstract text available
Text: PHOTODIODE 5mm2 - ISOLATED ODD-5WISOL FEATURES CASE NO CONNECTION • • • • TO-5 hermetic package Circular active area Low capacitance Isolated case RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R
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