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    IR2112 GATE DRIVER Search Results

    IR2112 GATE DRIVER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN55NJ0HD Murata Manufacturing Co Ltd Fixed IND 55nH 1500mA POWRTRN Visit Murata Manufacturing Co Ltd
    LQW18CNR56J0HD Murata Manufacturing Co Ltd Fixed IND 560nH 450mA POWRTRN Visit Murata Manufacturing Co Ltd
    DFE322520F-2R2M=P2 Murata Manufacturing Co Ltd Fixed IND 2.2uH 4400mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN4N9D0HD Murata Manufacturing Co Ltd Fixed IND 4.9nH 2600mA POWRTRN Visit Murata Manufacturing Co Ltd

    IR2112 GATE DRIVER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER bSE D • M Ö S S 4S 2 0 D 1 Ö 21 4 b41 ■ INR Provisional Data Sheet P D -6.0 26 INTERNATIONAL RECTIFIER I « R POWER MOSFET/IGBT GATE DRIVER IR2112 General Description Features The IR2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high


    OCR Scan     		IR2112 IR2112 M0-Q01AD. IR2112-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier Data Sheet No. PD-6.026A IR2112 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


    OCR Scan     		IR2112 0D2131D PDF

    IR2112 application note

    Abstract: IR2112 IR2112 equivalent IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50 APPLICATION IR2112
    Text: Data Sheet No. PD60026-R IR2112 S & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V


    Original     		PD60026-R IR2112 14-Lead IR2112 16-Lead IR2112S IR2112S IR2112 application note IR2112 equivalent IRFBC20 IRFBC30 IRFBC40 IRFPE50 APPLICATION IR2112 PDF

    IR2112 application note

    Abstract: IR2112 equivalent IR2112 PD60026 PD60026-O IR2112S transistor irfbc40 IRFBC20 IRFBC30 IRFBC40
    Text: Data Sheet No. PD60026-O IR2112 S HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap • Fully operational to +600V • Tolerant to negative transient voltage operation dV/dt immune • Gate drive supply range from 10 to 20V


    Original     		PD60026-O IR2112 IR2112S IRFPE50) IRFBC40) 14-Lead 16-Lead MS-001AC) IR2112 application note IR2112 equivalent PD60026 PD60026-O transistor irfbc40 IRFBC20 IRFBC30 IRFBC40 PDF

    IR2112

    Abstract: IR2112-1 IR2112-2 IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50
    Text: Data Sheet No. PD60026J IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PD60026J IR2112 IR2112 IR2101/IR21014/IR2102/IR21024 IR2112-1 IR2112-2 IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PDF

    IR2112 application note

    Abstract: IR2112 equivalent IR2112 DRIVER igbt WITH INPUT FOR SHUTDOW IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PD60026
    Text: Data Sheet No. PD60026 Rev.R IR2112 S & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V


    Original     		PD60026 IR2112 14-Lead IR2112 16-Lead IR2112S IR2112S IR2112 application note IR2112 equivalent DRIVER igbt WITH INPUT FOR SHUTDOW IRFBC20 IRFBC30 IRFBC40 IRFPE50 PDF

    IR2112

    Abstract: No abstract text available
    Text: Data Sheet No. PD60026I IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune · Gate drive supply range from 10 to 20V · Undervoltage lockout for both channels


    Original     		PD60026I IR2112 IR2112 PDF

    IR2112 application note

    Abstract: IR2112 IR2112 equivalent PD60026 IR2112 circuit IR2112-2 APPLICATION IR2112 IR2112S ir2112 gate driver IR2112-1
    Text: Data Sheet No. PD60026 revS IR2112 -1-2 (S)PbF HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V


    Original     		PD60026 IR2112 MS-013AA) 14-Lead 16-Lead IR2112PbF IR2112 application note IR2112 equivalent IR2112 circuit IR2112-2 APPLICATION IR2112 IR2112S ir2112 gate driver IR2112-1 PDF

    PD60026-L

    Abstract: IRFBC30 IR2112 IR2112S IRFBC20 IRFBC40 IRFPE50
    Text: Data Sheet No. PD60026-L IR2112 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage • • • • • • • • dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PD60026-L IR2112 IR2112 IR2112S IRFPE50) PD60026-L IRFBC30 IRFBC20 IRFBC40 IRFPE50 PDF

    IR2112 equivalent

    Abstract: IR2112 IR2112-2 IR2112-1 IR2112S IRFBC20 IRFBC30 IRFBC40 MP150 transistor irfbc40
    Text: Data Sheet No. PD-6.026-G IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		026-G IR2112 IR2112 IR2112S IRFBC40) IRFPE50) IR2112 equivalent IR2112-2 IR2112-1 IRFBC20 IRFBC30 IRFBC40 MP150 transistor irfbc40 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-6.026C International I R Rectifier IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


    OCR Scan     		IR2112 5M-1982 M0-047AC. 554S2 PDF

    sirio

    Abstract: IR2112 ar2112 IR2112S IR2112 J IR2112-1 IR2112-2 IR2112 circuit 600v plating phase rectifier diagram
    Text: International [S I Rectifier Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


    OCR Scan     		IR2112 sirio ar2112 IR2112S IR2112 J IR2112-1 IR2112-2 IR2112 circuit 600v plating phase rectifier diagram PDF

    IR2112

    Abstract: 5TO20V
    Text: International 1@I]Rectifier Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


    OCR Scan     		IR2112 IR2112 IRFPE50) IR2112S IRFBC20) IRFBC30) IRFBC40) 5TO20V PDF

    IR2112

    Abstract: IR2112 equivalent IR2112-1 IR2112-2 IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50
    Text: Data Sheet No. PD60026J IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PD60026J IR2112 IR2112 is0245 IR2112 equivalent IR2112-1 IR2112-2 IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60026-P IR2112 S HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels


    Original     		PD60026-P IR2112 14-Lead MS-001AC) 16-Lead MS-013AA) PDF

    IR2112 application note

    Abstract: IR2112 IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50
    Text: Data Sheet No. PD60026-P IR2112 S HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels


    Original     		PD60026-P IR2112 14-Lead 16-Lead MS-001AC) MS-013AA) IR2112 application note IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PDF

    IR2112 equivalent

    Abstract: IR2112-2 IR2112 IR2112 circuit IR2112S IR2112-1 MP150 high current igbt IGBT Designers Manual
    Text: Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels


    Original     		IR2112 IR2112 IR2112S IRFBC40) IRFPE50) IR2112 equivalent IR2112-2 IR2112 circuit IR2112-1 MP150 high current igbt IGBT Designers Manual PDF

    IR2112 application note

    Abstract: IR2112 equivalent igbt driver IR2112 IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50
    Text: Data Sheet No. PD60026-N IR2112 S HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels


    Original     		PD60026-N IR2112 IR2112S IRFPE50) 14-Lead 16-Lead MS-001AC) MS-013AA) IR2112 application note IR2112 equivalent igbt driver IRFBC20 IRFBC30 IRFBC40 IRFPE50 PDF

    IR2112 equivalent

    Abstract: IR2112 IR2112-1 IR2112-2 IR2112S MP150 IGBT Designers Manual IR2112 circuit B52 transistor
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V


    Original     		IR2112 IR2112S IRFBC40) IRFPE50) IR2112 equivalent IR2112 IR2112-1 IR2112-2 MP150 IGBT Designers Manual IR2112 circuit B52 transistor PDF

    IR2112 equivalent

    Abstract: IR2112 application note ir2112 transistor irfbc40 IR2112-1 IR2112-2 IR2112S IRFBC20 IRFBC30 IRFBC40
    Text: Data Sheet No. PD60026-K IR2112 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage • • • • • • • • dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PD60026-K IR2112 IR2112 equivalent IR2112 application note ir2112 transistor irfbc40 IR2112-1 IR2112-2 IR2112S IRFBC20 IRFBC30 IRFBC40 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60026J IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage • • • • • • • • dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PD60026J IR2112 PDF

    high frequency plating rectifier using IGBT

    Abstract: No abstract text available
    Text: Data Sheet No. PD -6.026C International IGR Rectifier IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V V o ffs e t 600V max. Tolerant to negative transient voltage dV/dt immune


    OCR Scan     		IR2112 IR2112 IR2112S IRFBC20) IR2112STj IRFBC30) IRFBC40) IRFPE50) high frequency plating rectifier using IGBT PDF

    IRF470

    Abstract: IR2110 equivalent power MOSFET IRF740 driver circuit IR2110 gate driver for mosfet irf740 equivalent driver circuit for MOSFET IR2110 IR2112 equivalent gate drive circuit for power MOSFET IRF740 irf740 mosfet IRF740LC
    Text: Index Design Tips DT 94-7A Low Gate Charge HEXFETs Simplify Gate Drive and Lower Cost Introduction Fast switching of power MOSFETs requires rapid transfer of the gate charge in a short period of time. High peak output current capability Control ICs can deliver high current spikes for fast switching, but the


    Original     		AN-944A: AN-937B: IRF470 IR2110 equivalent power MOSFET IRF740 driver circuit IR2110 gate driver for mosfet irf740 equivalent driver circuit for MOSFET IR2110 IR2112 equivalent gate drive circuit for power MOSFET IRF740 irf740 mosfet IRF740LC PDF

    IRF470

    Abstract: LRF740 IR2110 equivalent IR2110 gate driver for mosfet h bridge irf740 IRF470 mosfet 1rf740 IR2112 equivalent power MOSFET IRF740 driver circuit gate drive circuit for power MOSFET IRF740
    Text: International d iiRectifier D e sig n T ip s IN TE R N A TIO N A L R E C TIFIER • A P P LIC A T IO N S ENG. - 23 3 K AN S A S ST • E LS E G U N D O , CA. 9 0 2 4 5 - TE L 310 322-3331 • F A X (310)322-3332 LOW GATE CHARGE HEXFETS SIMPLIFY GATE DRIVE AND LOWER COST


    OCR Scan     		90245-TEL AN-944A: AN-937B: IRF470 LRF740 IR2110 equivalent IR2110 gate driver for mosfet h bridge irf740 IRF470 mosfet 1rf740 IR2112 equivalent power MOSFET IRF740 driver circuit gate drive circuit for power MOSFET IRF740 PDF