LD162DZ_DS
Abstract: No abstract text available
Text: Euvis LD162DZ_G0 Datasheet Email: Sales@euvis.com Tel: 818 879-7980 Sales Department Fax: (818) 879-9696 Document name: LD162DZ_DS_G0 Release date: 02/27/2004 Related document: LD162DZ_DS_5G4 @ 01/09/2004 Version: G0 Revision: (none) Euvis Laser Diode Driver, LD162DZ
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LD162DZ
LD162DZ
OC-192/STM-64/10GbE
32-Pin
OC-192,
STM-64
LD162DZ_DS
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flo16
Abstract: No abstract text available
Text: SL6619 Direct Conversion FSK Data Receiver Data Sheet March 2004 Ordering Information The SL6619 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all functions to convert a binary FSK modulated RF signal into a
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SL6619
SL6619
SL6619/KG/TP1N
SL6619/KG/TP1Q
flo16
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IRF 535
Abstract: IRF 100A IRF 2004 mosfet 23 Tsop-6 irf 30A IRF5800 IRF5850 SI3443DV TSOP6 Marking Code 17
Text: IRF5800PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage
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IRF5800PbF
IRF5802
IRF 535
IRF 100A
IRF 2004
mosfet 23 Tsop-6
irf 30A
IRF5800
IRF5850
SI3443DV
TSOP6 Marking Code 17
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Untitled
Abstract: No abstract text available
Text: PD-95262 IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from
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PD-95262
IRF5803PbF
OT-23.
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IRf 334
Abstract: No abstract text available
Text: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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IRF5804PbF
OT-23.
IRf 334
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bdl 39
Abstract: SPC-630 Hamamatsu avalanche diode BDL-473-SMC galvo scanner Picosecond Pulse Labs SPC-730 12V fluo SPC-130 SPC-535
Text: Becker & Hickl GmbH Technology Leader in Photon Counting Technology Leader in Photon Counting About bh Founded in 1993, Becker & Hickl have introduced a proprietary time-correlated single-photon counting principle that made TCSPC more than 100 times faster than the existing devices. Moreover, bh introduced a multi-dimensional TCSPC process that
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TA2015FNG
Abstract: No abstract text available
Text: TA2015FNG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2015FNG Ripple Filter 1.5V USE The TA2015FNG is a ripple filter IC, which is developed for low voltage operation (1.5V). It is especially suitable for supplying voltage for headphone
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TA2015FNG
TA2015FNG
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IRF MOSFET 100A 200v
Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
Text: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current
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IRF5801PbF
10sec.
IRF MOSFET 100A 200v
IRF 100A
IRF n 30v
IRF5851
MOSFET 150 N IRF
IRF5802
IRF5803
IRF5804
IRF5805
IRF5806
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power MOSFET IRF data
Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
Text: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier
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IRF5850PbF
IRF5850
power MOSFET IRF data
IRF Power MOSFET code marking
IRF5850PBF
mosfet p-channel 10A irf
IRF5800
IRF5801
IRF5852
mosfet irf p-channel
irf 2010
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IRF Power MOSFET code marking
Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
Text: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier
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5476A
IRF5806PbF
OT-23.
IRF Power MOSFET code marking
IRF MOSFET 10A P
power MOSFET IRF data
MOSFET 150 N IRF
IRF n 30v
MOSFET IRF 5804
IRF5800
IRF5801
MOSFET IRF 94
IRF5852
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Untitled
Abstract: No abstract text available
Text: CE - TESTER Compact EMC-tester acc. to the standards: BURST 5kV: IEC 61000-4-4 : 2012 SURGE 5kV, 2.5kA: IEC 61000-4-5 : 2014 Magnetic field 50/60 Hz: IEC 61000-4-8 : 2010 Magnetic field 8/20 µs: IEC 61000-4-9 : 2001 Voltage dips/variation: IEC 61000-4-11 : 2004
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D-76297
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irf MOSFET p-CH
Abstract: IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23
Text: PD-95341 IRF5851PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description
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PD-95341
IRF5851PbF
irf MOSFET p-CH
IRF P CHANNEL MOSFET
marking 27A sot-23
IRF5800
IRF5851
IRF5852
IRF n CHANNEL MOSFET
marking 25b sot23
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IRF5850
Abstract: IRF5801 IRF5806 IRF5851 IRF5852 I3443DV IRF5803 MOSFET IRF 5805 IRF 2004
Text: IRF5810PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage
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IRF5810PbF
IRF5803
IRF5802
IRF5850
IRF5801
IRF5806
IRF5851
IRF5852
I3443DV
IRF5803
MOSFET IRF 5805
IRF 2004
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AN1001
Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
Text: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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PD-95474A
IRF5801PbF
AN1001)
10sec.
AN1001
IRF5803
IRF5804
IRF5805
IRF5806
IRF5850
IRF5851
SI3443DV
IRF AN1001
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Untitled
Abstract: No abstract text available
Text: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits
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IRLTS6342PbF
IRLTS6342TRPBF
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IRLTS6342TRPBF
Abstract: IRLTS6342 m4570 irlts6342tr irf5850
Text: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits
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IRLTS6342PbF
IRLTS6342TRPBF
D-020D
IRLTS6342TRPBF
IRLTS6342
m4570
irlts6342tr
irf5850
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mosfet p-channel 300v irf
Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
Text: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier
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PD-95240
Si3443DVPbF
OT-23.
mosfet p-channel 300v irf
P-Channel 200V MOSFET TSOP6
IRF5850
IRF5851
IRF5852
mosfet 23 Tsop-6
PD-95240
p-channel 250V 30A power mosfet
IRF 100A 500V
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IRF 511 MOSfet
Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
Text: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier
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IRF5805PbF
OT-23.
IRF 511 MOSfet
IRF5850
IRF5851
IRF5852
IRF5805PBF
mosfet 23 Tsop-6
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IRF MOSFET 10A P
Abstract: IRF5810 IRF5850 IRF5851 IRF5852
Text: PD - 95469A IRF5810PbF HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free Description l l VDSS RDS on max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A These P-channel HEXFET® Power MOSFETs from
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5469A
IRF5810PbF
IRF MOSFET 10A P
IRF5810
IRF5850
IRF5851
IRF5852
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Untitled
Abstract: No abstract text available
Text: 10 REEL a NOTES 55450-* OTl¥jffl\i-SZ3) ,'rf3sSD-55450-010£#irF£lA 1. IN THE PACKAGE , PART NO. 55 45 0-» *»* DETAILED DIMENSIONS , SEE SD-55450-010. 2. : Q Q o m / 'j- ii NUMBER OF CONNECTORS ¡8 8 0 PCS/REEL SISWUSlql 3, PULL OUT DIRECTION LEAD TAPE LENGTH
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SD-55450-010.
rf3sSD-55450-010£
130gf
SD-55450-011
EN-02JA1021)
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J3050
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T 2004 30,50 POS By P U B L IC A T IO N R IG H TS AU G ,2 0 0 4 - REVISIO N S RESERVED. - LTR 40,60 POS D E S C R IP T IO N REVISED 2- 0 2 .1 5 PER DATE ECO —1 1 - 0 0 5 0 3 3
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28MAR11
UL94V-0)
23AUG04
20AUG04
J3050
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Untitled
Abstract: No abstract text available
Text: 2 T H IS D R A W IN G C O P Y R IG H T IS U N P U B L IS H E D . 2004 30,50 POS BY ^ C O RELEASED E L E C T R O N IC S C O R P O R A T IO N . FO R ALL P U B L IC A T IO N R IG H T S AU G , 2 0 0 4 . R E V IS IO N S RESERVED. LTR 40,60 POS 2- 0 2 .1 5 PLUG HOUSING
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FJB0-0871
23AUG04
05FEB04
FB001309
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IRF 1640
Abstract: GD4049B IRF 1640 G GAL16V8-20LNC gal22cv10 HA2-2725-5 HA2-2655-5 HA2-2650-2 irf 2030 GAL22CV10-10LVC
Text: • M fr Qty/Note 7 A0 D3 M5 000035fl ITS ■ Part Num ber M fr Qty/Note Part Num ber Mfr SM C 6658 GAL20V8QS-10LV! NSC 1995 HA1-2541-7 H AR 460 SMC 13390 GAL20V8QS-15LNC NSC 15169 HA1-2541/883 H AR 387 SMC 401 GAL20V8QS-15LVC NSC 1031 HA1-2655-5 H AR 210
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FDC92C36BP
FDC92C36P
FDC92C38BP
FDC92C33BT
FDC92C39BUP
FDC92C39BTBI
FDC92C39BTCD
FDC92C39BTLJP
FDC92C39BTP
FDC92C39LJP
IRF 1640
GD4049B
IRF 1640 G
GAL16V8-20LNC
gal22cv10
HA2-2725-5
HA2-2655-5
HA2-2650-2
irf 2030
GAL22CV10-10LVC
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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