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    IRF MOSFET BOOK Search Results

    IRF MOSFET BOOK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IRF MOSFET BOOK Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA037E – April 2001 – Revised April 2013 AN-1193 LM3477 Evaluation Board 1 Introduction The LM3477 is a current mode, high-side N channel FET controller. It is most commonly used in buck configurations, as shown in Figure 1. All the power conducting components of the circuit are external to


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    SNVA037E AN-1193 LM3477 LM3477, LM3477. PDF

    in6290a

    Abstract: H2019 IN6290 RJ-45 poe ethernet Vishay-Liteon HPA015 TP10 TPS2370 12061C104KAT2A slus537
    Text: TPS2370 Power Over Ethernet Powered Device PD EVM User’s Guide May 2003 PMP Systems Power SLVU083 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


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    TPS2370 SLVU083 TPS2370. TPS2370D in6290a H2019 IN6290 RJ-45 poe ethernet Vishay-Liteon HPA015 TP10 TPS2370 12061C104KAT2A slus537 PDF

    TPS2330

    Abstract: TPS2300 TPS2331 GMK316F475Z schematic diagram 48V telecom 12061C104KAT2A
    Text: TPS2330 48ĆV Telecom Hot Swap Evaluation Module and Interface Card User’s Guide April 2001 PMP PD & PS SLVU048 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


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    TPS2330 SLVU048 SLVP184 SLVP155) IRF530N TPS2330 TPS2300 TPS2331 GMK316F475Z schematic diagram 48V telecom 12061C104KAT2A PDF

    HPA015

    Abstract: 2N7002 Vishay-Liteon in6290a TP10 TPS2370 3M Touch Systems "Power over Ethernet" "power sourcing equipment"
    Text: TPS2370EVM Power Over Ethernet Powered Device PD EVM User’s Guide January 2004 PMP Systems Power SLVU083A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


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    TPS2370EVM SLVU083A TPS2370EVM. TPS2370D HPA015 2N7002 Vishay-Liteon in6290a TP10 TPS2370 3M Touch Systems "Power over Ethernet" "power sourcing equipment" PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU687A – March 2012 – Revised May 2014 TPS2379 EVM User’s Guide This User’s Guide describes the evaluation module EVM for the TPS2379 (TPS2379EVM-106). TPS2379 is an IEEE802.3at type 2 compliant powered device (PD) controller with a GATE output for


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    SLVU687A TPS2379 TPS2379 TPS2379EVM-106) IEEE802 PDF

    ca3103

    Abstract: 2n2222 -331 Cd4093 SiHF
    Text: VISHAY SILICONIX Power MOSFETs Application Note AN-937 Gate Drive Characteristics and Requirements for Power MOSFETs TABLE OF CONTENTS Page Gate Drive vs. Base Drive . 2


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    AN-937 ca3103 2n2222 -331 Cd4093 SiHF PDF

    IRF 544 N MOSFET

    Abstract: IRF 9234 mosfet irf 648 pioneer mosfet ic 007 vogt 543 02 010 00 vogt 543 80 008 00 IRF p 536 MOSFET vogt 428 027 rectificadores 504 13 005 00 vogt
    Text: I n t e r n a t i o n a l 50th R e c t i f i e r A n n u a l 1 9 9 7 R e p o r t F i n a n c i a l H i g h l i g h t s International Rectifier Corporation & Subsidiaries t h e C o m p a n y International Rectifier technology makes electricity better fuel and allows the Company to play a


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    S-163 IRF 544 N MOSFET IRF 9234 mosfet irf 648 pioneer mosfet ic 007 vogt 543 02 010 00 vogt 543 80 008 00 IRF p 536 MOSFET vogt 428 027 rectificadores 504 13 005 00 vogt PDF

    HEXFET Power MOSFET designer manual

    Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent
    Text: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs Table of Contents Page 1. Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations . 2


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    AN-937 500ns/div HEXFET Power MOSFET designer manual GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent PDF

    GBAN-PVI-1

    Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
    Text: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit


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    AN-937 500ns/div GBAN-PVI-1 ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary PDF

    266CT125-3E2A

    Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
    Text: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit


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    AN-937 500ns/div 266CT125-3E2A GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A PDF

    HAS300-S

    Abstract: IRF 830 equivalent IRF 543 MOSFET PCMC065T-1R0
    Text: TPS53316 SLUSAP5 – DECEMBER 2011 www.ti.com High-Efficiency, 5-A Step-Down Regulator with Integrated Switcher Check for Samples: TPS53316 FEATURES LOW VOLTAGE APPLICATIONS • • • • • 1 2 • • • • • • • • • • • • • • 96% Maximum Efficiency


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    TPS53316 16-Pin, HAS300-S IRF 830 equivalent IRF 543 MOSFET PCMC065T-1R0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS53316 SLUSAP5 – DECEMBER 2011 www.ti.com High-Efficiency, 5-A Step-Down Regulator with Integrated Switcher Check for Samples: TPS53316 FEATURES LOW VOLTAGE APPLICATIONS • • • • • 1 2 • • • • • • • • • • • • • • 96% Maximum Efficiency


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    TPS53316 PDF

    HAS300-S

    Abstract: No abstract text available
    Text: TPS53316 SLUSAP5 – DECEMBER 2011 www.ti.com High-Efficiency, 5-A Step-Down Regulator with Integrated Switcher Check for Samples: TPS53316 FEATURES LOW VOLTAGE APPLICATIONS • • • • • 1 2 • • • • • • • • • • • • • • 96% Maximum Efficiency


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    TPS53316 16-Pin, HAS300-S PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS53316 SLUSAP5 – DECEMBER 2011 www.ti.com High-Efficiency, 5-A Step-Down Regulator with Integrated Switcher Check for Samples: TPS53316 FEATURES LOW VOLTAGE APPLICATIONS • • • • • 1 2 • • • • • • • • • • • • • • 96% Maximum Efficiency


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    TPS53316 16-Pin, PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU682 – March 2012 TPS2378 EVM User’s Guide This User’s Guide describes the evaluation module EVM for the TPS2378 (TPS2378EVM-105). TPS2378 is an IEEE802.3at type 2 compliant powered device (PD) controller. 1 2 3 4 5 6 7 Contents Introduction . 2


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    SLVU682 TPS2378 TPS2378 TPS2378EVM-105) IEEE802 PDF

    MOSFET TRANSISTOR SMD MARKING CODE nh

    Abstract: ASR-10SS Kathrein Antennas Kathrein gsm ANTENNA murata filter cfm 455 d TRANSISTOR C 6090 EQUIVALENT 20000w audio amplifier schematic circuit diagram marking code C1H mmic murata filter cfm 455 k A08 smd transistor
    Text: 4th edition RF Manual, appendix Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4th edition March 2004 APPENDIX / documentation/rf_manual Document number: 4322 252 06388


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    BF1107/8 BGA2715-17 BGA6589 MOSFET TRANSISTOR SMD MARKING CODE nh ASR-10SS Kathrein Antennas Kathrein gsm ANTENNA murata filter cfm 455 d TRANSISTOR C 6090 EQUIVALENT 20000w audio amplifier schematic circuit diagram marking code C1H mmic murata filter cfm 455 k A08 smd transistor PDF

    vogt 545 13 084 00

    Abstract: 503 20 010 10 vogt vogt 545 23 194 00 vogt 545 13 084 503 10 010 00 vogt VOGT 545 29 008 00 vogt 545 24 027 00 vogt 428 027 VOGT 503 20 010 10 VOGT 503 05 010 30
    Text: IR I n t e r n a t i o n a l R e c t i f annual report 96 i e r About the Company International Rectifier’s power semiconductor technology makes electricity better fuel and allows the Company to play a fundamental role in the future of the world’s economies.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE LM1572 www.ti.com SNVS177C – MAY 2002 – REVISED APRIL 2013 LM1572 1.5A, 500kHz Step-down Voltage Regulator Check for Samples: LM1572 FEATURES DESCRIPTION • The LM1572 is a 500kHz step-down buck switching voltage regulator capable of driving up to 1.5A in to a


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    LM1572 SNVS177C LM1572 500kHz PDF

    irf power mosfet

    Abstract: SNVS177B
    Text: LM1572 LM1572 1.5A, 500kHz Step-down Voltage Regulator Literature Number: SNVS177B LM1572 1.5A, 500kHz Step-down Voltage Regulator General Description Features The LM1572 is a 500kHz step-down buck switching voltage regulator capable of driving up to 1.5A in to a load while


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    LM1572 LM1572 500kHz SNVS177B irf power mosfet SNVS177B PDF

    marking code R56 SMD Transistor

    Abstract: smd transistor p5s marking code R52 SMD Transistor
    Text: User's Guide SLUU335A – December 2008 – Revised January 2010 bq78PL114 8S EVM The PowerLAN 8S Evaluation Module EVM is a complete evaluation system for the bq78PL114 Battery Management Controller and bq76PL102 Dual-Cell Li-Ion Battery Monitor integrated circuits


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    SLUU335A bq78PL114 bq76PL102 marking code R56 SMD Transistor smd transistor p5s marking code R52 SMD Transistor PDF

    ASR-10SS

    Abstract: SA2400A Funkamateur Nordmende Elektra 58 DIN7985-H asr10ss Kathrein raytheon klystron ECC85 ZB sot89
    Text: 第4版 RF 手册, 附录 页码: 1 飞利浦 RF 小信号分立元器件 产品设计手册 第4版 2004 年 6 月 ucts/discretes/documentation/rf_manual 文件号: 4322 252 06390 发布时间: June 2004


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    BF1107/8 BGA2715-1750 BGA6x8950 BGA6589 BAP51-02 BGU2003 ASR-10SS SA2400A Funkamateur Nordmende Elektra 58 DIN7985-H asr10ss Kathrein raytheon klystron ECC85 ZB sot89 PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


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    T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630 PDF