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    IRF SOT23 Search Results

    IRF SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    IRF SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1R2 DIODE

    Abstract: 7821 10MV1200AX CDEP134H IRF7821 IRF RECTIFIER MAX8546EUB IRF 47 dh 499 JMK316BJ106ML
    Text: 4.5V to 5.5V VIN C2 0.1uF C3 2.2uF 10V 4 D2 CMPSH-3 3 VCC 5 VL BST IN D1 CMPSH-3 U1 MAX8546 R1 120k 1 COMP DH 10 R2 4.7 N1 IRF 7821 L1 1.2uH CDEP134H -1R2 1.8V@10A VOUT LX GND FB 6 7 2 D3 EC10 QS03L N2 IRF 7821 R5 1.5 C8 1200uF 10V MV-AX 4x C7 2.2nF R3 12.7k


    Original     		MAX8546 CDEP134H QS03L 1200uF 20MHz 50mVpp LMK212BJ225MG 1200uF 10MV1200AX 1R2 DIODE 7821 10MV1200AX CDEP134H IRF7821 IRF RECTIFIER MAX8546EUB IRF 47 dh 499 JMK316BJ106ML PDF

    2N3904 SOT-23 MARKING CODE

    Abstract: TO226AA Philips TO-92 MARKING CODE BC327 NATIONAL SEMICONDUCTOR AGt marking code nte 2n3904 DALLAS SEMICONDUCTOR 2501 to-226aa BC547C SOT23 NATIONAL SEMICONDUCTOR MARKING CODE sot
    Text: Transistors Manufacturer’s Code Log AGT ANA ADV AVX BNS CRY DLS Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Bourns Crydom Company Dallas Semiconductor EPC FSC FJS GIS HVP IRF INT EPCOS Fairchild Semiconductor Fuji Semiconductor General Semiconductor


    Original     		751B-SO-16) 2N5485 2N5486 O-226AA) 2N3904 SOT-23 MARKING CODE TO226AA Philips TO-92 MARKING CODE BC327 NATIONAL SEMICONDUCTOR AGt marking code nte 2n3904 DALLAS SEMICONDUCTOR 2501 to-226aa BC547C SOT23 NATIONAL SEMICONDUCTOR MARKING CODE sot PDF

    irf 3905

    Abstract: 680k ohm resistor 470uf 40v cap CAPACITOR 47UF 25V ELECTROLYTIC 1k ohm, 0.25w resistor NPN transistor 2n 3904 EF12.6 100uF 25V Electrolytic Capacitor transistor 2N 3904 usb modem
    Text: USB Modem 4.5V to 5.5V INPUT C2 1uF 10V 9 R1 680k 2 D1 CMPSH-3 16 IN 15 VL ILIM BST COMP DH 14 13 C4 10uF 10V C3 0.1uF R3 4.7 N1A 1/2 IRF 7301 12 C1 5.6nF LX DL VL GND U1 MAX1864T R2 100k OUT 1 POK FB 3.1V@ 400mA 1,2 R4 4.7 11 T1 1:1:3 Lpri=22.8uH 9,10 C10


    Original     		MAX1864T 400mA 470uF CMPT3904 100mVpp SG7-0057 MAX1864TEEE 16-QSOP) 25mVpp irf 3905 680k ohm resistor 470uf 40v cap CAPACITOR 47UF 25V ELECTROLYTIC 1k ohm, 0.25w resistor NPN transistor 2n 3904 EF12.6 100uF 25V Electrolytic Capacitor transistor 2N 3904 usb modem PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95262 IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from


    Original     		PD-95262 IRF5803PbF OT-23. PDF

    IRLML6404

    Abstract: IRLML6403 IRLML6501 irlml6402 equivalent IRLC6401B
    Text: PD - 95828 IRLC6401B HEXFET l l D -12V RDS on = 0.05Ω (max.) 6" Wafer Power MOSFET Die in Wafer Form 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics (SOT-23 package) Parameter V(BR)DSS RDS(on)


    Original     		IRLC6401B OT-23 100nA IRLML6404 IRLML6403 IRLML6501 irlml6402 equivalent IRLC6401B PDF

    IRf 334

    Abstract: No abstract text available
    Text: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from


    Original     		IRF5804PbF OT-23. IRf 334 PDF

    power MOSFET IRF data

    Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
    Text: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		IRF5850PbF IRF5850 power MOSFET IRF data IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5852 mosfet irf p-channel irf 2010 PDF

    IRF Power MOSFET code marking

    Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
    Text: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier


    Original     		5476A IRF5806PbF OT-23. IRF Power MOSFET code marking IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852 PDF

    irf MOSFET p-CH

    Abstract: IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23
    Text: PD-95341 IRF5851PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description


    Original     		PD-95341 IRF5851PbF irf MOSFET p-CH IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23 PDF

    IRF FET

    Abstract: IRf 48 MOSFET IRF n 30v pcb diagram for 12v charge controller mosfet p channel irf McMaster-Carr MCR03EZHJ IR3624MPBF IRF7823PBF IRF7832Z
    Text: IRPP3624-12A POWIR+ Chipset Reference Design #0612 12Amp Single Phase Synchronous Buck POWIR+TM Chipset Reference Design using IR3624MPBF PWM & Driver IC and IRF7823 and IRF7832Z MOSFET By Steve Oknaian, Senior Applications Engineer www.irf.com RD#0612 1 Table of Contents


    Original     		IRPP3624-12A 12Amp IR3624MPBF IRF7823 IRF7832Z IRPP3624-5A 600kHz IR3624M IRF8910 IRF FET IRf 48 MOSFET IRF n 30v pcb diagram for 12v charge controller mosfet p channel irf McMaster-Carr MCR03EZHJ IRF7823PBF PDF

    IRF Power MOSFET code marking

    Abstract: IRF 535 IRF5800 IRF5850 SI3443DV IRF MOSFET 10A P MOSFET IRF 94
    Text: PD - 96029 IRF5800PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		IRF5800PbF OT-23. IRF Power MOSFET code marking IRF 535 IRF5800 IRF5850 SI3443DV IRF MOSFET 10A P MOSFET IRF 94 PDF

    KF5N50

    Abstract: kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
    Text: Package Line-up Outline Name ESM USM TSM SOT-23 FLP-8 DPAK FLP-14 Size[㎣] 1.65x0.85 2.0×1.25 2.9×1.6 2.93×1.3 4.85×3.94×1.6 6.6×6.1 8.66×3.94×1.63 Type No. Package MB6S / M VRRM MBS / M IF Type No. KTC3003 HV 0.5A 600V DF06(S) DF(S) 1N4007(G) DO-41


    Original     		OT-23 FLP-14 KTC3003 1N4007 DO-41 MJE13003 MJE13005 O-126 KF5N50 kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S DF06 IC kf13n50 PDF

    resistor 100k ohm

    Abstract: resistor* 100k ohm INVENTEC resistor 10k ohm JMK212BJ106MG IRF 511 Resistor 511 Ohm 47uF 6.3v 0603 C0603C104K4RAC EEFUE0E271XR
    Text: DESIGNATION C4-C9 C1-C3 C10,C11,C15 C13,C14,C16 C12 CA D1 N1,N2 R8 R2 R7 R3 L1 U1 R6 Q1 INVENTEC 3.3V Input 1.25V @ 12A Output 04/18/02 QTY DESCRIPTION 6 Cap 270 uF 2.5V SP Panasonic EEFUE0E271XR 3 Cap 180uF 6.3V SP Panasonic (EEFUE0J181XR) 3 Cap 10uF 6.3V Ceramic X5R 1812,


    Original     		EEFUE0E271XR) 180uF EEFUE0J181XR) JMK212BJ106MG) LMK107BJ474KA) EMK212BJ474MG) C0603C104K4RAC) OT-23, IRF7822) 300KHz resistor 100k ohm resistor* 100k ohm INVENTEC resistor 10k ohm JMK212BJ106MG IRF 511 Resistor 511 Ohm 47uF 6.3v 0603 C0603C104K4RAC EEFUE0E271XR PDF

    33272

    Abstract: 33262 33272 -8 ceramic capacitor 22nf 25SC47M DO5022P EC31 KSH30 LMK212BJ105MG LMK325BJ106MN
    Text: C4 1uF 10V 10V to 14V VIN D1 CMPSH-3 C3 2.2nF 9 R1 120k 2 16 VP 15 VL ILIM BST COMP DH 13 LX DL VL GND U1 MAX1864T R2 100k 11 C5 0.1uF R3 3.3 R4 3.3 POK FB B2 4 5 R5 220 0.25W 6 R8 10.0k B3 C7 4.7uF 25V X5R L1 3.3uH DO5022P -332HC D2 EC31 QS03L 3 C10 47nF


    Original     		MAX1864T DO5022P -332HC QS03L 820uF KSH30 150mA TMK325BJ475MN 820uF 6MV820EXR 33272 33262 33272 -8 ceramic capacitor 22nf 25SC47M DO5022P EC31 KSH30 LMK212BJ105MG LMK325BJ106MN PDF

    mosfet p-channel 300v irf

    Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
    Text: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PD-95240 Si3443DVPbF OT-23. mosfet p-channel 300v irf P-Channel 200V MOSFET TSOP6 IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V PDF

    IRF 511 MOSfet

    Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
    Text: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier


    Original     		IRF5805PbF OT-23. IRF 511 MOSfet IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6 PDF

    IRF MOSFET 10A P

    Abstract: IRF5810 IRF5850 IRF5851 IRF5852
    Text: PD - 95469A IRF5810PbF HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free Description l l VDSS RDS on max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A These P-channel HEXFET® Power MOSFETs from


    Original     		5469A IRF5810PbF IRF MOSFET 10A P IRF5810 IRF5850 IRF5851 IRF5852 PDF

    TSOP-6 .54

    Abstract: irf5850 TSOP6 Marking Code 17
    Text: PD - 95506B IRF5850PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International


    Original     		95506B IRF5850PbF IRF5850 OT-23RK TSOP-6 .54 TSOP6 Marking Code 17 PDF

    DIODE D3S 90

    Abstract: BC 247 sot-23 d2s diode DIODE d3s TRAY DIMENSIONS SOIC16 tape & reel d3s diode
    Text: Discrete Surface Mount Prefixes Suffixes Pkg dim D-PAK TO-252-2L RHRD RURD S S D2S Dim D-PAK (TO-252-3L) IRFR RFD RLD FDD MOSFET Bipolar Diode JFETs IGBT Pkg method Qty (pcs) Reel dia Tape width (inch) (mm) Tape & Reel 2.5K 13 16 X Tape & Reel 2.5K 13 16


    Original     		O-252-2L) O-252-3L) O-263/D2PAK O-263/D2PAK O-268 DIODE D3S 90 BC 247 sot-23 d2s diode DIODE d3s TRAY DIMENSIONS SOIC16 tape & reel d3s diode PDF

    McMaster-Carr

    Abstract: Schottky Diode 40V 6A 91841A003 fet so-8 g 12 r MCR03EZHJ 91792A077 30V 12Amp diode 91792 IR3637 MPL1055-1R2IR
    Text: IRPP3637-12A POWIR+ Chipset Reference Design 12Amp Single Phase Synchronous Buck POWIR+TM Chipset Reference Design using IR3637SPBF PWM & Driver IC and IRF7823PBF & IRF7832ZPBF SO-8 MOSFETs By Steve Oknaian, Senior Applications Engineer Table of Contents Page


    Original     		IRPP3637-12A 12Amp IR3637SPBF IRF7823PBF IRF7832ZPBF 600kHz IRPP3637-12A 400kHz IR3637S IRF7823 McMaster-Carr Schottky Diode 40V 6A 91841A003 fet so-8 g 12 r MCR03EZHJ 91792A077 30V 12Amp diode 91792 IR3637 MPL1055-1R2IR PDF

    SN146-1R0

    Abstract: capacitor 1000uF 16V SN146 IRF FET McMaster-Carr schematic diagram PWM 12V 30a 1000uf, 6.3v electrolytic capacitor 18a sot23 1000uf, 16v electrolytic capacitor capacitor 1000uF/16V
    Text: IRPP3637-18A POWIR+ Chipset Reference Design 18Amp Single Phase Synchronous Buck POWIR+TM Chipset Reference Design using IR3637SPBF PWM & Driver IC and IRLR8713PBF & IRLR7843PBF D-Pak MOSFETs By Steve Oknaian, Senior Applications Engineer Table of Contents


    Original     		IRPP3637-18A 18Amp IR3637SPBF IRLR8713PBF IRLR7843PBF IR3637AS IRF8910 IRPP3637-12A 400kHz IR3637S SN146-1R0 capacitor 1000uF 16V SN146 IRF FET McMaster-Carr schematic diagram PWM 12V 30a 1000uf, 6.3v electrolytic capacitor 18a sot23 1000uf, 16v electrolytic capacitor capacitor 1000uF/16V PDF

    800w class d circuit diagram schematics

    Abstract: schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram AC to DC smps for plasma tv circuit diagram 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM schematic diagram AC to DC converter 800W IRF 9234
    Text: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 2 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: June 1997 FAIRCHILD M IC O N D U C T O R m FDC633N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		FDC633N PDF

    IRF 1450

    Abstract: km 1667 km 1667 datasheet mmic marking code j
    Text: SIEMENS CMY 91 GaAs MMIC Datasheet * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1 mA typ. * Single positive supply voltage * Operating voltage range: 2.7 to 6 V * Miniature package MW6 based on SOT23


    OCR Scan     		Q62702-M9 01-coil; B82412-A3221-M 900MHz 1450MHz 1900MHz IRF 1450 km 1667 km 1667 datasheet mmic marking code j PDF