IRF Power MOSFET code marking
Abstract: IRFR5305 IRFU5305 IRF 100A IRFR5305PBF
Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A
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PD-95025A
IRFR5305PbF
IRFU5305PbF
IRFR5305)
IRFU5305)
AN-994.
IRFR/U5305PbF
O-251AA)
IRF Power MOSFET code marking
IRFR5305
IRFU5305
IRF 100A
IRFR5305PBF
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Untitled
Abstract: No abstract text available
Text: PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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5549A
IRFR13N15DPbF
IRFU13N15DPbF
AN1001)
IRFR13N15D
IRFU13N15D
AN-994.
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DIODE 83A
Abstract: AN1001 EIA-541 IRFR13N15D IRFU120 IRFU13N15D R120 U120 MOSFET IRF 94
Text: PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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5549A
IRFR13N15DPbF
IRFU13N15DPbF
AN1001)
IRFR13N15D
IRFU13N15D
AN-994.
DIODE 83A
AN1001
EIA-541
IRFR13N15D
IRFU120
IRFU13N15D
R120
U120
MOSFET IRF 94
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AN1001
Abstract: EIA-541 IRFR13N15D IRFU120 IRFU13N15D R120 U120 irf 48v mosfet
Text: PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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5549A
IRFR13N15DPbF
IRFU13N15DPbF
AN1001)
IRFR13N15D
IRFU13N15D
AN-994.
AN1001
EIA-541
IRFR13N15D
IRFU120
IRFU13N15D
R120
U120
irf 48v mosfet
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TO-247AC Package
Abstract: IRFP064V irf 2030
Text: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ
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IRFP064V
O-247
TO-247AC Package
IRFP064V
irf 2030
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irf 2030 n
Abstract: irf 2030 IRF 545 IRFP064V
Text: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ
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IRFP064V
O-247
O-247AC
irf 2030 n
irf 2030
IRF 545
IRFP064V
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IRFR5305
Abstract: IRFR P-Channel MOSFET IRFU5305PbF IRFU5305
Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A
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PD-95025A
IRFR5305PbF
IRFU5305PbF
IRFR5305)
IRFU5305)
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRFR5305
IRFR P-Channel MOSFET
IRFU5305PbF
IRFU5305
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IRFR5305
Abstract: IRFU5305 irf5305 IRFR5305PBF IRFU5305PbF
Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A
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PD-95025A
IRFR5305PbF
IRFU5305PbF
IRFR5305)
IRFU5305)
moun16
EIA-481
EIA-541.
EIA-481.
IRFR5305
IRFU5305
irf5305
IRFR5305PBF
IRFU5305PbF
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Untitled
Abstract: No abstract text available
Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A
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PD-95025A
IRFR5305PbF
IRFU5305PbF
IRFR5305)
IRFU5305)
EIA-481
EIA-541.
EIA-481.
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Untitled
Abstract: No abstract text available
Text: PD - 95549 IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRFR13N15DPbF
IRFU13N15DPbF
AN1001)
IRFR13N15D
IRFU13N15D
AN-994.
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DIODE 83A
Abstract: AN1001 EIA-541 IRFR13N15D IRFU120 IRFU13N15D R120 DIODE RG 83A
Text: PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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5549A
IRFR13N15DPbF
IRFU13N15DPbF
AN1001)
IRFR13N15D
IRFU13N15D
EIA-481
EIA-541.
EIA-481.
AN-994.
DIODE 83A
AN1001
EIA-541
IRFR13N15D
IRFU120
IRFU13N15D
R120
DIODE RG 83A
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ELECTRONIC BALLAST 36W circuit diagram
Abstract: circuit diagram electronic ballast for 36W tube capacitor 47uF/400V T500mA 100uF 400V capacitor capacitor 100MF 100v BZX85C15V VOGT r7 capacitor 47MF 50v capacitor 100nf 400v
Text: AND8312/D A 36W Ballast Application with the NCP5104 Prepared by: Thierry Sutto http://onsemi.com NOTE: BEFORE PLUGGING IN THE DEMO BOARD, MAKE SURE THE JUMPER IS ON THE CORRECT POSITION: IF J2 IS USED, THEN Vin MUST BE LOWER THAN 145 Vac. This document describes how the NCP5104 driver can be
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AND8312/D
NCP5104
NCP5104
ELECTRONIC BALLAST 36W circuit diagram
circuit diagram electronic ballast for 36W tube
capacitor 47uF/400V
T500mA
100uF 400V capacitor
capacitor 100MF 100v
BZX85C15V
VOGT r7
capacitor 47MF 50v
capacitor 100nf 400v
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EIA-541
Abstract: No abstract text available
Text: IRF7606PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage
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IRF7606PbF
EIA-481
EIA-541.
EIA-541
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EIA-541
Abstract: No abstract text available
Text: PD - 95245 IRF7606PbF Generation V Technology Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching l Lead-Free Description HEXFET Power MOSFET l l A D 1 8 S 2 7 D S 3 6 D
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IRF7606PbF
EIA-481
EIA-541.
EIA-541
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IRF 850 mosfet
Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF
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OCR Scan
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O-220
IR9523
IRF9522
IRF9513
IRF9511
IRF9512
IRF9510
IRF9623
IRF9621
IRF9622
IRF 850 mosfet
MOSFET IRF 635
MOSFET IRF 630
MOSFET IRF 713
IRF N-Channel Power MOSFETs
IRF 740 N
IRF 840 MOSFET
IRF 450 MOSFET
P Channel Power MOSFET IRF
irf 540 mosfet
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IR F740
Abstract: No abstract text available
Text: • M3 0 SS7 1 00S40SÖ 23 HARRIS 3fl4 ■ HAS IRF740/741/74 2/743 IRF740R/741R/742R/743R N-Channel Power MOSFETs Avalanche Energy Rated* A u gu st 1 9 9 1 Package Features T 0 -2 2 0 A B • 8A and 10A, 3 5 0 V - 4 0 0 V T O P V IE W • r o s ° n = 0 .5 5 f i and 0 .8 f i
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00S40SÃ
IRF740/741/74
IRF740R/741R/742R/743R
IRF740,
IRF741,
IRF742,
IRF743
IRF740R,
IRF741R,
IRF742R
IR F740
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IRF341R
Abstract: No abstract text available
Text: [2 HARRIS IR F 3 4 0 /3 4 1 /3 4 2 /3 4 3 IR F 340R /341 R /3 4 2 R /343R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 19 9 1 P a ck a g e F e a tu re s T O -2 0 4 A A BOTTOM VIEW • 10A and 8.3A, 400V - 350V • rDS on = 0.55H and 0 .8 0 ÎÎ
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/343R
IRF340,
IRF341,
IRF342,
IRF343
IRF340R,
IRF341R,
IRF342R,
IRF343R
plc/lRF/34Q/
IRF341R
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742r
Abstract: F740 F742 F741 742-R IRF P CHANNEL MOSFET 10a
Text: 23 H A R R IS IR F740/741/742/743 IRF740R/741R/742R/743R N -Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package F e a tu re s T O -2 2 0 A B • 8A and 10A, 350V - 400V TOP VIEW • rD S °n = 0 .5 5 fi and 0.8J1 • Single Pulse Avalanche Energy Rated*
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F740/741/742/743
IRF740R/741R/74
IRF740,
IRF741,
IRF742,
IRF743
IRF740R,
IRF741R,
IRF742R
IRF743R
742r
F740
F742
F741
742-R
IRF P CHANNEL MOSFET 10a
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Untitled
Abstract: No abstract text available
Text: • 4 3 0 5 3 7 1 0 0 5 3 ^ 4 3 HARRIS 1T4 ■ HAS IR F340/341/342/343 IRF340R/341R/342R/343R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A • 10A and 8.3A , 4 0 0 V - 3 5 0 V B O T T O M V IE W • rD S on = 0 .5 5 0 and 0 .8 0 H
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F340/341/342/343
IRF340R/341R/342R/343R
IRF340,
IRF341,
IRF342,
IRF343
IRF340R,
IRF341R,
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irf440
Abstract: No abstract text available
Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t
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IRF9140
IRF9230
IRF9240
irf440
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4336 MOSFET
Abstract: MOSFET IRF 713 n-channel 4336 712r RF710R IRF711
Text: IRF710/7 1 1 /7 1 2 /7 1 3 IRF71 OR/711R/712R/713R 33 HARRIS N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B TOP VIEW • 1.7A and 2.0A, 350V - 400V • rD S °n - 3-6 fl and 5 .0 ft • Single Pulse Avalanche Energy Rated*
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IRF710/7
IRF71
OR/711R/712R/713R
IRF710,
IRF711,
IRF712,
IRF713
IRF710R,
IRF711R,
IRF712R
4336 MOSFET
MOSFET IRF 713
n-channel 4336
712r
RF710R
IRF711
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MOSFET IRF 713
Abstract: No abstract text available
Text: • M302271 0054043 T53 ■ HAS IR F710/711/712/713 IRF71 OR/711R/712R/713R 33 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -22 0A B TOP VIEW • 1.7A and 2.0A, 350V - 400V • i"DS °n = 3.6fl and 5.0fl DRAIN (FLANGE)
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M302271
F710/711/712/713
IRF71
OR/711R/712R/713R
IRF710,
IRF711,
IRF712,
IRF713
IRF710R,
IRF711R,
MOSFET IRF 713
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mosfet yb
Abstract: SSF6N80A
Text: Advanced SSF6N80A P o w e r MOSFET FEATURES BV • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge — ^D S o n = lD = ■ E xtended S afe O pe ra ting A rea ■
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SSF6N80A
mosfet yb
SSF6N80A
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irf5205
Abstract: IRF520 IRF521 IRF523 IRF522
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF520 IRF521 IRF522 IRF523 P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid
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IRF520
IRF521
IRF522
IRF523
IRF520,
IRF522,
irf5205
IRF523
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