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    IRF13 Price and Stock

    Infineon Technologies AG IRF135SA204

    MOSFET N-CH 135V 160A D2PAK-7
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    DigiKey IRF135SA204 Reel 2,400 800
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    Avnet Americas IRF135SA204 Reel 4 Weeks 93
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    • 100 $3.807
    • 1000 $3.591
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    Newark IRF135SA204 Cut Tape 1
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    Rochester Electronics IRF135SA204 17 1
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    • 100 $3.71
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    Chip1Stop IRF135SA204 Cut Tape 800
    • 1 $7.21
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    Infineon Technologies AG IRF1310NPBF

    MOSFET N-CH 100V 42A TO220AB
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    DigiKey IRF1310NPBF Tube 1,273 1
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    Avnet Americas IRF1310NPBF Tube 4 Weeks 425
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    IRF1310NPBF Bulk 16 Weeks, 4 Days 1
    • 1 $1.94
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    IRF1310NPBF Tube 10 Weeks 1,000
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    Mouser Electronics IRF1310NPBF 3,532
    • 1 $1.74
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    Newark IRF1310NPBF Bulk 1,526 1
    • 1 $1.93
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    RS IRF1310NPBF Bulk 1
    • 1 $1.84
    • 10 $1.75
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    Rochester Electronics IRF1310NPBF 2,200 1
    • 1 $0.859
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    TME IRF1310NPBF 161 1
    • 1 $1.37
    • 10 $1.16
    • 100 $0.88
    • 1000 $0.65
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    Chip1Stop IRF1310NPBF 5,666
    • 1 $3.43
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    • 100 $0.824
    • 1000 $0.533
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    IRF1310NPBF Tube 3,178
    • 1 $1.6
    • 10 $1.05
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    IRF1310NPBF 986
    • 1 $1.6979
    • 10 $1.1352
    • 100 $0.7923
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    EBV Elektronik IRF1310NPBF 2,000 11 Weeks 1,000
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    New Advantage Corporation IRF1310NPBF 2,000 1
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    Win Source Electronics IRF1310NPBF 15,000
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    • 100 $0.948
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    Infineon Technologies AG IRF1302S

    MOSFET N-CH 20V 174A D2PAK
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    DigiKey IRF1302S Tube
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    Infineon Technologies AG IRF1310NL

    MOSFET N-CH 100V 42A TO262
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    DigiKey IRF1310NL Tube 50
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    Infineon Technologies AG AUIRF1324S

    MOSFET N-CH 24V 195A D2PAK
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    Avnet Americas AUIRF1324S Tube 4 Weeks 174
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    Find more IRF13 price and stock on Findchips.com

    IRF13 Datasheets (192)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF130 International Rectifier HEXFET Transistor Original PDF
    IRF130 Intersil 14A, 100V, 0.160 ?, N-Channel Power MOSFET Original PDF
    IRF130 Semelab N-Channel Power MOSFET Original PDF
    IRF130 Fairchild Semiconductor N-Channel Power MOSFETs, 20 A, 60-100 V Scan PDF
    IRF130 FCI POWER MOSFETs Scan PDF
    IRF130 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF130 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF130 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. Scan PDF
    IRF130 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF130 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF130 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
    IRF130 Motorola Switchmode Datasheet Scan PDF
    IRF130 Motorola European Master Selection Guide 1986 Scan PDF
    IRF130 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF130 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    IRF130 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF130 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF130 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    ...

    IRF13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF1310N

    Abstract: 4.5v to 100v input regulator
    Text: PD - 91504A IRF1310N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1504A IRF1310N O-220 IRF1310N 4.5v to 100v input regulator

    SHD217302

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD217302A IRF130 SHD217302A SHD217302

    IRF1302L

    Abstract: IRF1302S
    Text: PD - 94520 AUTOMOTIVE MOSFET IRF1302S IRF1302L Benefits ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF IRF1302S IRF1302L AN-994. IRF1302L IRF1302S

    ir 429c

    Abstract: AN-994 IRF1324S-7P 429AD 429C
    Text: PD - 97263A IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits


    Original     		PDF 7263A IRF1324S-7PPbF ir 429c AN-994 IRF1324S-7P 429AD 429C

    smd diodes s4 1.5w

    Abstract: marking code PAD1 SMD U3158 GENERAL SEMICONDUCTOR SMD DIODES s4 PD9002 smd diode marking f4 diode smd marking GPO 27 lvt 817 smd code marking a3a
    Text: IRF130SMD05N IRFN130SMD05 MECHANICAL DATA Dimensions in mm inches 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 )  ! VDSS ID(cont) RDS(on) 1 0 .1 6 (0 .4 0 0 )


    Original     		PDF IRF130SMD05N IRFN130SMD05 IRF130SMD05 IRF130SMD05" IRF130SMD05 IRF130SMD05DSG O276AA) 650pF smd diodes s4 1.5w marking code PAD1 SMD U3158 GENERAL SEMICONDUCTOR SMD DIODES s4 PD9002 smd diode marking f4 diode smd marking GPO 27 lvt 817 smd code marking a3a

    irf130

    Abstract: No abstract text available
    Text: PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756  HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number IRF130 BVDSS 100V RDS(on) 0.18Ω ID 14A The HEXFETtechnology is the key to International


    Original     		PDF 90333F IRF130 JANTX2N6756 JANTXV2N6756 O-204AA/AE) MIL-PRF-19500/542] irf130

    Untitled

    Abstract: No abstract text available
    Text: PD - 94591 AUTOMOTIVE MOSFET Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax IRF1302 HEXFET Power MOSFET D VDSS = 20V


    Original     		PDF IRF1302 AN-994. O-220

    Untitled

    Abstract: No abstract text available
    Text: IRF130SMD MECHANICAL DATA Dimensions in mm inches 0 .8 9 (0 .0 3 5 ) m in .  3 .6 0 (0 .1 4 2 ) M a x . ! VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 0 .6 9 (0 .4 2 1 )


    Original     		PDF IRF130SMD 00A/ms

    IRF130

    Abstract: IRF132 IRF131 IRF133 TA17411 TB334 380uH
    Text: IRF130, IRF131, IRF132, IRF133 S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 12A and 14A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF130, IRF131, IRF132, IRF133 IRF130 IRF132 IRF131 IRF133 TA17411 TB334 380uH

    AN-994

    Abstract: 5MAD IRF1324S-7PPBF 429AD High Efficiency Synchronous Rectification in SMPS IRF1324S-7P
    Text: PD - 97263 IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits


    Original     		PDF IRF1324S-7PPbF AN-994. AN-994 5MAD IRF1324S-7PPBF 429AD High Efficiency Synchronous Rectification in SMPS IRF1324S-7P

    Untitled

    Abstract: No abstract text available
    Text: PD- 95409 IRF1312PbF IRF1312S IRF1312L HEXFET Power MOSFET Applications l l l l High frequency DC-DC converters Motor Control Uninterrutible Power Supplies TO-220 is available in PbF as a Lead-Free VDSS 80V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses


    Original     		PDF IRF1312PbF IRF1312S IRF1312L O-220 O-220AB AN1001) O-262

    AN-994

    Abstract: ir 429c
    Text: PD - 97263 IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits


    Original     		PDF IRF1324S-7PPbF AN-994 ir 429c

    AN1001

    Abstract: IRF1312 IRF1312L IRF1312S IRF530S IRL3103L
    Text: PD- 95409A IRF1312PbF IRF1312SPbF IRF1312LPbF HEXFET Power MOSFET Applications l l l l High frequency DC-DC converters Motor Control Uninterrutible Power Supplies Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


    Original     		PDF 5409A IRF1312PbF IRF1312SPbF IRF1312LPbF AN1001) IRF1312S O-220AB IRF1312 O-262 IRF1312L AN1001 IRF1312 IRF1312L IRF1312S IRF530S IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: PD - 95690 IRF1310NPbF • Lead-Free www.irf.com 8/19/04 IRF1310NPbF 2 www.irf.com IRF1310NPbF www.irf.com 3 IRF1310NPbF 4 www.irf.com IRF1310NPbF www.irf.com 5 IRF1310NPbF 6 www.irf.com IRF1310NPbF www.irf.com 7 IRF1310NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRF1310NPbF O-220AB

    irf7309

    Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
    Text: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S


    Original     		PDF OT-223 IRF3710S IRF7324 IRF1310NS IRF731450 1N4049 300U80A† 150L10A† DO-30 irf7309 IRF7507TR IRF7342 IRF7210 IRLML2803TR IRF964

    Untitled

    Abstract: No abstract text available
    Text: IRF130 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)14 I(DM) Max. (A) Pulsed I(D)9.0 @Temp (øC)100 IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55


    Original     		PDF IRF130

    MJ 15005 transistor

    Abstract: ir 429c IRF 1640 IRF1324S AN-994 IRF1324S-7PPBF 7PPB
    Text: PD - 97263 IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits


    Original     		PDF IRF1324S-7PPbF MJ 15005 transistor ir 429c IRF 1640 IRF1324S AN-994 IRF1324S-7PPBF 7PPB

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    IRf 48 MOSFET

    Abstract: MOSFET 150 N IRF 1RF130 "Power MOSFETs" IRF 130 IRF N-Channel Power MOSFETs IRf 80 12 MOSFET IRF131 irf 80 n IRF 80A IRF133
    Text: - Standard Power M O SFET s File N u m b e r IRF130, IRF131, IRF132, IRF133 1566 Power M O S Field-Effect Transistors N-Cfiannel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRF130, IRF131, IRF132, IRF133 0V-100V 92CS-33741 IRF132 IRF133 IRf 48 MOSFET MOSFET 150 N IRF 1RF130 "Power MOSFETs" IRF 130 IRF N-Channel Power MOSFETs IRf 80 12 MOSFET IRF131 irf 80 n IRF 80A

    D86DL2

    Abstract: IRF130 CPD75
    Text: IRF130,131 P86DL2,K2 [jSSMlMiCS FEF RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 14.0 AMPERES


    OCR Scan     		PDF IRF130 D86DL2 250MA, Rds10Ni CPD75

    IRF130

    Abstract: irf131 142SA
    Text: 796 4 1 4 2 _ J Tfl SAMSUNG S E M I CONDÜCTOR DE I T T t i M l M S D0DS074 IN C 98D □ 05074 D T ^ -II N-CHANNEL POWER MOSFETS IRF130/131/132/133 FEA TU R E S LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF D0DS074 IRF130/131/132/133 IRF130 IRF131 IRF132 IRF133 00US435 F--13 142SA

    1RF130

    Abstract: IRFI30 IRf 48 MOSFET 1RF131 03gm IRF N-Channel Power MOSFETs IRF132 MOSFET 150 N IRF T39 diode IRF130
    Text: •01 D eT J ^ Ö V S O A I 3875081 G E SOLID STATE Standard Power M OSFETs OOlflEbT T f " 01E 18269 D T " ‘3 ? ‘"/i _ IRF130, IRF131, IRF132, IRF133 File N u m b e r 1 566 Power MOS Field-Effect Transistors


    OCR Scan     		PDF IRF130, IRF131, IRF132, IRF133 12Aand 0V-100V IRF132 1RF130 IRFI30 IRf 48 MOSFET 1RF131 03gm IRF N-Channel Power MOSFETs MOSFET 150 N IRF T39 diode IRF130

    irf130

    Abstract: IRF133 IRF132 IRF131 IRF130 mosfet
    Text: IRF130, IRF131, IRF132, IRF133 HARRIS S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Description Features • High Input Im pedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF130, IRF131, IRF132, IRF133 TA17411. irf130 IRF133 IRF132 IRF131 IRF130 mosfet

    MTP20N10

    Abstract: 1RF531
    Text: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA


    OCR Scan     		PDF 2N67S5 2N6756 IRF130 IRF131 IRF132 IRF133 IRF530 1RF531 IRF532 IRF533 MTP20N10